SEMICONDUCTOR KRX205U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C (Ultra Super mini type with 6 leads.) Simplify circuit design. D B1 C Reduce a quantity of parts and manufacturing process. H EQUIVALENT CIRCUIT 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G Q1 IN OUT R1 Q2 OUT R1 IN COMMON Q1 , Q 2 R1=4.7KΩ 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) COMMON US6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q1 MAXIMUM RATING (Ta=25 1 ) CHARACTERISTIC Marking 6 4 BE Q2 2 Type Name 5 1 3 2 3 SYMBOL RATING UNIT Collectoor-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V IC 100 SYMBOL RATING UNIT Collectoor-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V IC -100 SYMBOL RATING PC * 200 Tj 150 Tstg -55 150 Collector Current Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector Current Q1, Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range UNIT * Total Raing. 2002. 12. 18 Revision No : 1 1/3 KRX205U Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 DC Current Gain hFE VCE=5V, IC=1 120 - - VCE(sat) IC=10 , IB=0.5 - 0.1 0.3 Transition Frequency fT * VCE=10V, IC=5 - 250 - Input Resistor R1 - 4.7 - Ries time tr - 0.025 - Storage Time tstg - 3.0 - Fall Time tf - 0.2 - MIN. TYP. MAX. Collector-Emitter Saturation Voltage Switching Time VO=5V, VIN=5V, RL=1k UNIT. V Note : * Characteristic of Transistor Only. Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL ) TEST CONDITION Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 DC Current Gain hFE VCE=-5V, IC=-1 120 - - VCE(sat) IC=-10 , IB=-0.5 - -0.1 -0.3 Transition Frequency fT * VCE=-10V, IC=-5 - 250 - Input Resistor R1 - 4.7 - Ries time tr - 0.2 - Storage Time tstg - 2.0 - Fall Time tf - 0.3 - Collector-Emitter Saturation Voltage Switching Time VO=-5V, VIN=-5V, RL=1k UNIT. V Note : * Characteristic of Transistor Only. 2002. 12. 18 Revision No : 1 2/3 KRX205U h FE - I C Q1 COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k V CE(sat) - I C 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 10 0.1 0.3 1 3 10 30 100 2 Q1 IC /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 1k Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2002. 12. 18 10 30 100 V CE(sat) - I C Q2 500 300 3 COLLECTOR CURRENT I C (mA) h FE - I C 2k 1 Revision No : 1 -100 -2 Q2 -1 IC /I B =20 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 3/3