SEMICONDUCTOR KTX102E TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR GENERAL PURPOSE APPLICATION. B FEATURES B1 Including two devices in TES6. C A 6 2 5 3 4 D Reduce a quantity of parts and manufacturing process. 1 A1 Simplify circuit design. C (Thin Extreme Super mini type with 6 Pin.) EQUIVALENT CIRCUIT (TOP VIEW) 4 Type Name Q1 6 Q2 1 2 P 5 MARKING 5 4 h FE Rank 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 D 3 1 J 5 P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + H 6 P DIM A A1 B B1 C D H J 2 EMITTER BASE BASE COLLECTOR EMITTER COLLECTOR 3 TES6 Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 Base Current IB -30 SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 Base Current IB 30 SYMBOL RATING PC * 200 Tj 150 Tstg -55 150 Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Q1, Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range UNIT * Total Raing. 2004. 1. 28 Revision No : 0 1/5 KTX102E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 hFE (Note) VCE=-6V, IC=-2 120 - 400 - -0.1 -0.3 80 - - - 4.0 7.0 - 1.0 10 MIN. TYP. MAX. DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=-100 fT Transition Frequency , IB=-10 VCE=-10V, IC=-1 Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 Noise Figure NF VCE=-6V, IC=-0.1 Note) hFE Classification : Y(4)120~240, , Rg=10 SYMBOL ) TEST CONDITION Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 hFE (Note) VCE=6V, IC=2 120 - 400 DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=100 , IB=10 - 0.1 0.25 fT VCE=10V, IC=1 80 - - - 2.0 3.5 - 1.0 10 Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1 Noise Figure NF VCE=6V, IC=0.1 , f=1 Note) hFE Classification : Y(4)120~240, 2004. 1. 28 V GR(6)200~400 Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC , f=1 UNIT. , Rg=10 UNIT. V GR(6)200~400 Revision No : 0 2/5 KTX102E Q 1 (PNP TRANSISTOR) -240 DC CURRENT GAIN h FE I B =-1.0mA -120 I B =-0.5mA -80 I B =-0.2mA -40 I B =0mA -1 -2 -3 -4 Ta=25 C Ta=-25 C 100 VCE =-1V -5 -6 30 -0.1 -7 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) VCE(sat) - I C VBE(sat) - I C -10 COMMON EMITTER I C /I B =10 -0.5 -0.3 -0.1 00 =1 Ta -0.05 C Ta=25 C Ta=-25 C -0.03 -0.3 -1 -3 -10 -30 -100 -3 -1 -0.5 -0.3 -0.1 -0.1 -300 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) f T - IC I B - VBE -1k 1k 500 300 100 50 30 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) Revision No : 0 300 -300 COMMON EMITTER VCE =-6V -300 -100 -30 -10 Ta=2 5 C Ta=-2 5 C COMMON EMITTER VCE =-10V Ta=25 C -300 COMMON EMITTER I C/I B=10 Ta=25 C -5 COLLECTOR CURRENT I C (mA) 3k 10 0.1 VCE =-6V Ta=100 C 300 COLLECTOR-EMITTER VOLTAGE VCE (V) -1 -0.01 -0.1 500 Ta=1 00 C 0 1k 50 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY f T (MHz) COMMON EMITTER I B =-1.5mA -160 0 2004. 1. 28 3k COMMON EMITTER Ta=25 C I B =-2.0mA -200 h FE - I C BASE CURRENT IB (µA) COLLECTOR CURRENT I C (mA) I C - VCE -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 3/5 KTX102E Q 2 (NPN TRANSISTOR) h FE - I C I C - VCE 200 3.0 2.0 160 1.0 120 0.5 80 I B =-0.2mA 40 0 1 2 3 4 5 6 300 100 50 30 VCE =1V 10 0.1 7 VCE =6V Ta=100 C Ta=25 C Ta=-25 C 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) VCE(sat) - I C VBE(sat) - I C 10 COMMON EMITTER IC /I B=10 0.5 0.3 0.1 00 =1 Ta 0.05 C Ta=25 C Ta=-25 C 0.03 0.3 1 3 10 30 100 3 1 0.5 0.3 0.1 300 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) f T - IC I B - VBE 3k 1k 500 300 100 50 30 300 COMMON EMITTER VCE =6V 1k 300 100 C Ta=2 5 C Ta=25 C COMMON EMITTER VCE =10V Ta=25 C 300 COMMON EMITTER I C /I B=10 Ta=25 C 5 COLLECTOR CURRENT I C (mA) 3k 10 500 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 0.01 0.1 COMMON EMITTER 30 Ta=1 00 0 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 0 10 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 2004. 1. 28 1k COMMON EMITTER Ta=25 C 5.0 DC CURRENT GAIN h FE 6.0 BASE CURRENT I B (µA) TRANSITION FREQUENCY f T (MHz) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT I C (mA) 240 Revision No : 0 300 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 4/5 COLLECTOR POWER DISSIPATION PC (mW) KTX102E Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2004. 1. 28 Revision No : 0 5/5