PHOTOTRANSISTOR L-51P3C Features Description !MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE L-53 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: KDA0531 APPROVED:J.LU REV NO: V.1 CHECKED: DATE: SEP/17/2001 DRAWN:X.Q.ZHENG PAGE: 1 OF 2 Absolute Maximum Rating at T)=25°°C Par am et er Max im u m Rat in g s Collector-to-Emitter Breakdown Voltage 30V Emitter-to-Collector Breakdown Voltage 5V Power Dissipation at (or below) 25°C Free Air Temperature 100mW Operating Temperature Range -40°C ~ +85°C Storage Temperature Range -40°C ~ +85°C 260°C Lead Soldering Temperature(4mm For 5sec) Electrical And Radiant Characteristics at T)=25°°C Sy m b o l Par am et er Min . Ty p . Max . Un it Tes t Co n d ic t io n V BR C EO Collector-to-Emitter Breakdown Voltage 30 - - V I C=100uA Ee=0mW/cm2 V BR EC O Emitter-to-Collector Breakdown Voltage 5 - - V I E=100uA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V I C=2mA Ee=20mW/cm2 ICEO Collector Dark Current - - 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10% to 90%) - 3 - us TF Fall Time (90% to 10%) - 3 - us 0.1 0.5 - mA I (ON) On State Collector Current SPEC NO: KDA0531 APPROVED:J.LU REV NO: V.1 CHECKED: DATE: SEP/17/2001 DRAWN:X.Q.ZHENG VCE=5V IC=1mA RL=1KΩ VCE=5V, Ee=1mW/cm2, λ=940nm PAGE: 2 OF 2