PHOTOTRANSISTOR WP32P3C Description Features MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototransistor chips. W34 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. SPEC NO: DSAF0434 REV NO: V.1 DATE: FEB/28/2005 PAGE: 1 OF 2 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: Y.W.WANG ERP:1101003346 Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. Typ. Max. Units Test Conditions VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V IC=100uA Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V IE=100uA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V IC=2mA Ee=20mW/cm2 Collector Dark Current - - 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10％ to 90％ ) - 3 - us TF Fall Time (90％ to 10％ ) - 3 - us 0.1 0.5 - mA ICEO I(ON) On State Collector Current VCE = 5V IC=1mA RL=1000Ω VCE = 5V Ee=1mW/cm2 λ=940nm Absolute Maximum Ratings at TA=25°C Parameter Max.Ratings Collector-to-Emitter Breakdown Voltage 30V Emitter-to-Collector Breakdown Voltage 5V Power Dissipation at (or below) 25°C Free Air Temperature 100mW Operating Temperature Range -40°C ~ +85°C Storage Temperature Range -40°C ~ +85°C Lead Solder Temperature (>5mm for 5sec) 260°C SPEC NO: DSAF0434 REV NO: V.1 DATE: FEB/28/2005 PAGE: 2 OF 2 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: Y.W.WANG ERP:1101003346