Infrared Emitting Diodes(GaAs) KODENSHI EL-1CL3 DIMENSIONS (Unit : mm) The EL-1CL3 is a high-power GaAs IRED mounted in a 3ø low-cost ceramic package, designed for use as low-cost emitter array in consumer and industrial applications. FEATURES •Compact (ø3mm) •Wide beam angle •Low-cost APPLICATIONS •Floppy disk drives •Optical switches •Optical readers MAXIMUM RATINGS Item Reverse voltage Forward current Pulse forward current *1 Power dissipation Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF IFP PD Topr. Tstg. Tsol. 4 60 0.5 80 -20~+70 -20~+80 240 V mA A mW ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=25℃) Symbol Conditions VF IR Ct PO λp Δλ △θ IF=40mA VR=4V f=1MHz IF=40mA IF=40mA IF=40mA Min. Typ. 1.2 25 1.8 940 50 ±53 - 1- Max. Unit. 1.5 10 V μ A pF mW/sr nm nm deg. Infrared Emitting Diodes(GaAs) EL-1CL3 Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current Vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-