KODENSHI EL-1CL3

Infrared Emitting Diodes(GaAs)
KODENSHI
EL-1CL3
DIMENSIONS
(Unit : mm)
The EL-1CL3 is a high-power GaAs IRED mounted in
a 3ø low-cost ceramic package, designed for use as
low-cost emitter array in consumer and industrial
applications.
FEATURES
•Compact (ø3mm)
•Wide beam angle
•Low-cost
APPLICATIONS
•Floppy disk drives
•Optical switches
•Optical readers
MAXIMUM RATINGS
Item
Reverse voltage
Forward current
Pulse forward current *1
Power dissipation
Operating temp.
Storage temp.
Soldering temp. *2
(Ta=25℃)
Symbol
Rating
Unit
VR
IF
IFP
PD
Topr.
Tstg.
Tsol.
4
60
0.5
80
-20~+70
-20~+80
240
V
mA
A
mW
℃
℃
℃
*1. pulse width :tw ≦100 μ
sec.period :T=10msec.
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
(Ta=25℃)
Symbol
Conditions
VF
IR
Ct
PO
λp
Δλ
△θ
IF=40mA
VR=4V
f=1MHz
IF=40mA
IF=40mA
IF=40mA
Min.
Typ.
1.2
25
1.8
940
50
±53
- 1-
Max.
Unit.
1.5
10
V
μ
A
pF
mW/sr
nm
nm
deg.
Infrared Emitting Diodes(GaAs)
EL-1CL3
Power dissipation Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Forward current Vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
- 2-