Infrared Emitting Diodes(GaAs) KODENSHI EL325 DIMENSIONS (Unit : mm) The EL325 is a GaAs IRED mounted in a low profile clear epoxy package.This IRED is both compact and easy to mount. FEATURES •Ultra compact •Low profile •Snap– in mount is possible APPLICATIONS •Photointerrupters •Optical equipment MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation Pulse forward current *1 Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF PD IFP Topr. Tstg. Tsol. 5 50 100 0.5 －25～＋85 －30～＋85 260 V mA mW A ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity *3 Half angle (Ta=25℃) Symbol Conditions VF IR λp Δλ PO Δθ IF=50mA VR=5V IF=50mA IF=50mA IF=50mA Min. Typ. 940 50 0.7 ±50 *3. Measured by tester of KODENSHI CORP. - 1- Max. Unit. 1.6 10 V μ A nm nm mW/sr deg. Infrared Emitting Diodes(GaAs) EL325 Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-