Infrared Emitting Diodes(GaAs) KODENSHI EL-1ML2 DIMENSIONS (Unit : mm) The EL-1ML2, a high-power GaAs IRED mounted in a TO-18 type header with clear epoxy encapsulation, has wide beam angle and is relatively low-cost compared to TO-18 can-type devices. FEATURES •Wide beam angle •Relative low cost against metal can package •Low profile package APPLICATIONS •Optical switches •Encoders •Optical readers MAXIMUM RATINGS Item Reverse voltage Forward current Pulse forward current *1 Power dissipation Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF IFP PD Topr. Tstg. Tsol. 5 100 1 170 -25~+100 -25~+100 260 V mA A mW ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=25℃) Symbol Conditions VF IR Ct PO λp Δλ △θ IF=50mA VR=5V f=1MHz IF=50mA IF=50mA IF=50mA Min. Typ. 1.2 25 2.7 940 50 ±32 - 1- Max. Unit. 1.5 10 V μ A pF mW/sr nm nm deg. Infrared Emitting Diodes(GaAs) EL-1ML2 Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-