Infrared Emitting Diodes(GaAs) KODENSHI EL-316 DIMENSIONS (Unit : mm) The EL-316 is a high-power GaAs IRED mounted in a clear epoxy package. FEATURES •ø3 casting mold type •High output power APPLICATIONS •VTR •Optical remote controllers •Transmission sensors MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation Pulse forward current *1 Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF PD IFP Topr. Tstg. Tsol. 4 60 80 0.5 －25～＋80 －40～＋85 240 V mA mW A ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity Half angle (Ta=25℃) Symbol Conditions VF IR λp Δλ PO Δθ IF=40mA VR=4V IF=40mA IF=40mA IF=40mA Min. Typ. 1.2 10 - 1- 940 50 20 ±17 Max. Unit. 1.5 10 V μ A nm nm mW/sr deg. Infrared Emitting Diodes(GaAs) EL-316 Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-