Photocoupler K101 • K102 • K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a channel. The K101 has one channel in a 4-pin mini-flat SMD package. The K102 has two channels in a 8-pin mini-flat SMD package. The K104 has four channels in a 16-pin mini-flat SMD package. FEATURES • Mini-Flat Package • Collector-Emitter Voltage : Min.50V • Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V) • Electrical Isolation Voltage : AC3750Vrms APPLICATIONS • Interface between two circuits of different potential • Cordless Phone • Programmable Logic Control • Microcomputer DIMENSION K101 (Unit : mm) K102 3 1 2 8 6 5 3 4 4.4 4.4 1 Orientation Mark 0.5 8.7 0.5 5.2 0.2 0.4Min. 2.54 0.1 2.54 0.05 0.4Min. 0.1 7.0 0.2 0.2 2.5 2.5 0.15 0.2 5.2 0.2 0.05 0.2 0.1 2 Orientation Mark 7.0 3.6 0.4 7 0.2 0.2 4 0.25 0.15 2.54 K104 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 4.4 0.2 16 Orientation Mark 0.2 7.0 0.5 5.2 0.2 0.4Min. 2.54 0.15 0.1 2.54 0.05 0.1 2.5 0.2 18.8 1/3 Photocoupler K101 • K102 • K104 MAXIMUM RATINGS Parameter Forward Current Input Output Reverse Voltage Peak Forward Current Power Dissipation *1 Symbol Rating (Ta=25℃ ) Unit IF 50 mA VR 5 V IFP 1 A PD 70 mW Collector-Emitter Breakdown Voltage BVCEO 50 V Emitter-Collector Breakdown Voltage BVECO 6 V IC 50 mA Collector Current Collector Power Dissipation Input to Output Isolation Voltage Storage Temperature *2 Operating Temperature Lead Soldering Temperature Total Power Dissipation *3 PC 150 mW Viso AC3750 Vrms Tstg -55~+125 ℃ Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec ELECTRO-OPTICAL CHARACTERISTICS Min. Typ. Max. Unit. Forward Voltage VF IF=10mA - 1.15 1.30 V Reverse Current IR VR=5V - - 10 ㎂ Capacitance CT V=0, f=1MHz - 30 - pF Parameter Input Output Symbol Condition Collector-Emitter Breakdown Voltage BVCEO IC=0.5mA 50 - - V Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector Dark Current ICEO IF=0, VCE=24V - - 100 nA Capacitance CCE VCE=0, f=1MHz - 10 - pF Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled (Ta=25℃ , unless otherwise noted) Input-Output Capacitance Input-Output Isolation Resistance CTR IF=5mA, VCE=5V 50 - 600 % VCE(SAT) IF=5mA, IC=1mA - 0.15 0.4 V V=0, f=1MHz - 1 - pF - Ω CIO RIO RH=40~60%, V=500V - 10 11 Rise Time tr VCE=5V, RL=100 - 3 - ㎲ Fall Time tf IC=2mA - 3 - ㎲ *4. CTR=(IC/IF) X 100 (%) 2/3 Photocoupler K101 • K102 • K104 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 60 100 80 250 100 200 80 150 100 50 0 -20 Ambient Temperature Ta (℃ ) Collector Current vs. Collector-Emitter Voltage Dark Current I CEO (㎂ ) Collector Current I C (mA) I F =20mA 30 I F =10mA 20 P C(max.) I F =5mA 10 I F =1mA 0 2 4 6 8 10 60 80 Collector Current I C (mA) 1 0 20 40 60 80 I F =20mA 10 I F =10mA I F =5mA 1 I F =1mA 0 -20 100 0 20 40 Switching Time Test Circuit V CC Ta =25℃ V CE =5V RL R V IN VO 10 1 Test Circuit 0.1 Input 0.01 0.1 1.0 Load Resistance RL (㏀ ) 2.0 0.001 0.1 Output 1 10 Forward Current I F (mA) 3/3 80 60 Ambient Temperature Ta (℃ ) 10% 0.1 1.6 Collector Current vs. Ambient Temperature Collector Current vs. Forward Current tf 1.2 Dark Current vs. Ambient Temperature Ambient Temperature Ta (℃ ) 500 V CE =5V I C=2mA Ta =25℃ 100 0.8 Forward Voltage VF (V) 0.01 100 tr T a=-55℃ 0.4 Ambient Temperature Ta (℃ ) 0.1 Response Time vs. Load Resistance 10 20 100 V CE =24V 0.001 T a=25℃ 100 Collector-Emitter Voltage VCE (V) Response Time tr , tf (μs) 40 20 I F =30mA 40 Ta =70℃ 40 0 0 1 T a =25℃ 60 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 100 90% tr Wave form tf