Photocoupler K4N35 •K4N36 •K4N37 These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in 6-pin package. (Unit : mm) 7.62 5 4 1 2 3 0.25 6.4 0.25 6 FEATURES 6.4 • Switching Time - Typ. 3µs • Collector-Emitter Voltage : Min.30V 0.25 • Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V) 8.9 Orientation Mark • Electrical Isolation Voltage : AC2500Vrms 3.8 • Interface between two circuits of different potential • Vending Machine, Voltage Regulator 0.25 1.2 • Programmable Controller MAXIMUM RATINGS Parameter Forward Current Reverse Voltage Peak Forward Current *1 Power Dissipation Symbol Rating (Ta=25℃ ) Unit IF 60 mA VR 5 V IFP 3 A PD 70 *4 mW Collector-Emitter Breakdown Voltage BVCEO 35 Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage BVCBO 70 V V Collector Current IC 50 mA Collector Power Dissipation PC 150 mW Viso AC2500 Vrms Tstg -55~+125 ℃ Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW Input to Output Isolation Voltage *2 Storage Temperature Operating Temperature Lead Soldering Temperature 5 1 2 4 0.5 2.54 • Traffic Controller System Output 6 0.51Min. 2.7Min. APPLICATIONS Input -15 PIN NO. AND INTERNAL CONNECTION DAGRAM 0.25 • UL Recognized File No. E107486 0 0.25 *3 Total Power Dissipation *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec *4. Customer Option 1/3 3 Photocoupler K4N35 •K4N36 •K4N37 ELECTRO-OPTICAL CHARACTERISTICS Parameter Symbol Output IF=10mA - Reverse Current IR VR=5V Capacitance CT V=0, f=1MHz 1.15 1.30 - - 10 ㎂ - 30 - pF 35 - - V V Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage BVCBO IC=0.1mA 70 - - V - - 50 nA Collector Dark Current Capacitance Current Transfer Ratio *5 Collector-Emitter Saturation Voltage Coupled (Ta=25℃ , unless otherwise noted) Min. Max. Unit. Typ. VF Forward Voltage Input Condition Input-Output Capacitance ICEO IF=0, VCE=10V CCE VCE=0, f=1MHz - 10 - pF CTR IF=10mA, VCE=10V 100 - - % VCE(SAT) IF=10mA, IC=0.5mA - 0.15 0.3 V V=0, f=1MHz - 1 - pF CIO RH=40~60%, V=500V - 10 - ℃ Rise Time tr VCC=10V, RL=100Ω - 3 10 ℃ Fall Time tf IC=2mA - 3 10 ℃ Input-Output Isolation Resistance RIO *5. CTR=(IC/IF) X 100 (%) 2/3 11 Photocoupler K4N35 • K4N36 • K4N37 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 80 60 100 250 100 200 80 150 100 50 20 0 20 0 40 60 80 0.4 100 Dark Current I CEO (㎂) 20 I F =10mA I F =5mA 0.1 VCE =10V 0.01 I F =20mA I F =10mA 10 I F =5mA 1 I F =1mA 10 I F =1mA 0 2 4 6 8 0.001 10 0 Collector-Emitter Voltage VCE (V) 20 40 80 60 100 0 -20 Ambient Temperature Ta (℃ ) 100 Collector Current I C (mA) VCE=10V I C =2mA Ta =25℃ 100 tf tr 10 1 0 20 40 60 Switching Time Test Circuit R VIN VCC RL Ta=25℃ VCE=10V VO 10 1 Test Circuit 0.1 Input 0.01 Output 10% 0.1 0.1 1.0 Load Resistance R L (㏀) 5.0 80 Ambient Temperature Ta (℃ ) Collector Current vs. Forward Current Response Time vs. Load Resistance 500 1.6 100 I F =30mA I F =20mA 1.2 Collector Current vs. Ambient Temperature 1 30 0.8 Forward Voltage VF (V) Dark Current vs. Ambient Temperature Ta=25℃ Collector Current I C (mA) Ta=25℃ Ambient Temperature Ta (℃ ) Collector Current vs. Collector-Emitter Voltage Response Time t r , t f (μs) Ta=70℃ 40 Ta=-55℃ 0 -20 Ambient Temperature Ta (℃ ) 40 60 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 0.001 0.1 90% 1 10 Forward Current Forward Current II FF (mA) (mA) 3/3 100 tr tf Waveform