Photocoupler KPC814A • KPC824A • KPC844A These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes connected in a reverse-paralled configuration for AC-input and a Silicon NPN Phototransistor per a channel. The KPC814A has one channel in a 4-pin DIP package. The KPC824A has two channels in a 8-pin DIP package. The KPC844A has four channels in a 16-pin DIP package. FEATURES • Small Package Size • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : 50% Min.(at IF=A1mA) • Electrical Isolation Voltage : AC5000Vrms • UL Recognized File No. E107486 • VDE Approval No. 0884 APPLICATIONS • AC Signal Input • Interface between two circuits of difference • Vending Machine • Cordless Phone, Key Phone • Programmable Logic Control (Unit : mm) DIMENSION KPC814A KPC824A 7 6 5 1 2 3 4 6.5 6.5 1 2 Orientation Mark Orientation Mark 7.62 0.25 6.5 0.25 9.7 7.62 0.25 6.5 0.25 0.25 0 1.2 2.54 ~15 0.5 0.25 1.2 0.25 0 2.54 0.25 ~15 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 6.5 0.25 KPC844A 2.5Min. 0.5 0.51Min. 2.5Min. 3.5 3.5 0.25 0.25 4.6 0.51Min. 8 0.25 0.25 3 Orientation Mark 7.62 0.25 6.5 0.25 0.51Min. 2.5Min. 3.5 0.25 19.8 0.25 0.5 1.2 2.54 0 0.25 1/3 ~15 Photocoupler KPC814A • KPC824A • KPC844A MAXIMUM RATINGS Parameter Rating IF ±50 IFP ±1 A PD 70 mW Collector-Emitter Breakdown Voltage BVCEO 35 V Emitter-Collector Breakdown Voltage BVECO 6 V IC 50 mA Forward Current Input Output (Ta=25℃) Unit Symbol Peak Forward Current Power Dissipation *1 Collector Current Collector Power Dissipation Input to Output Isolation Voltage Storage Temperature *2 Operating Temperature Lead Soldering Temperature Total Power Dissipation *3 mA PC 150 mW Viso AC5000 Vrms Tstg -55~+125 ℃ Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW *1. Input current with 100㎲ pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Forward Voltage Condition VF IF= ±10mA CT V=0, f=1kHz , unless otherwise noted) Min. Typ. Max. Unit. - 1.15 1.30 V - 30 - pF Collector-Emitter Breakdown Voltage BVCEO IC=0.5mA 35 - - V Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V IF=0, VCE=24V - - 100 nA Capacitance Collector Dark Current Capacitance Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled (Ta=25 Symbol Input-Output Capacitance ICEO CCE VCE=0, f=1kHz - 10 - pF CTR IF= ±1mA, VCE=5V 50 - 600 % VCE(SAT) IF= ±5mA, IC=1mA - 0.15 0.4 V V=0, f=1kHz - 1 - pF CIO RH=40~60%, V=500V - 10 - Ω Rise Time tr VCE=5V, RL=100Ω - 4 - ㎲ Fall Time tf IC=2mA - 4 - ㎲ 1 - 3 Input-Output Isolation Resistance Symmetry Ratio RIO CTR1/CTR2 *4. CTR=(IC/IF) X 100 (%) 2/3 11 Photocoupler KPC814A • KPC824A • KPC844A Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 80 60 100 250 100 200 80 150 100 50 0 -20 Ambient Temperature Ta (℃) 20 Ta=-55℃ 40 80 60 0.4 100 I F =20mA PC (max.) I F =10mA I F =5mA 1.2 1.6 Collector Current vs. Ambient Temperature 100 I F =30mA 30 0.8 Forward Voltage V F (V) 1 Dark Current I CEO (㎂) Collector Current I C (mA) Ta=25℃ Dark Current vs. Ambient Temperature Ta=25℃ 20 Ta =70℃ 40 Ambient Temperature Ta (℃ ) Collector Current vs. Collector-Emitter Voltage 40 60 0 20 0 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 0.1 VCE =24V 0.01 I F =20mA I F =10mA 10 I F =5mA 1 I F =1mA 10 I F =1mA 0.001 0 2 4 6 8 10 0 Collector-Emitter Voltage V CE (V) 0 -20 0 20 40 60 tf 1 Switching Time Test Circuit VCC Ta=25℃ VCE=5V R VIN VO 10 1 Test Circuit 0.1 Input Output 0.01 10% 0.1 0.1 1.0 Load Resistance R L (㏀) 80 Ambient Temperature Ta (℃ ) RL 500 VCE=5V I C=2mA Ta=25℃ 100 Collector Current I C (mA) Response Time t r , t f (μs) 80 Collector Current vs. Forward Current 100 tr 60 Ambient Temperature Ta (℃ ) Response Time vs. Load Resistance 10 40 20 2.0 0.001 0.1 90% 1 10 Forward Current I F (mA) 3/3 tr 100 Waveform tf