Photocoupler K4N30 DIMENSION These Photocouplers cosist of a Gallium Arsenide Infrared Emitting (Unit : mm) Diode and a Silicon NPN Photo Darlington transistor in a 6-pin 7.62 package. 6 5 4 1 2 3 0.25 6.4 0.25 FEATURES 6.4 • Small Package Size • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Type 1000% (at IF=10mA, VCE=10V) • Electrical Isolation Voltage : AC2500Vrms • UL Recognized File No. E107486 0.25 0° -15° 0.25 8.9 0.25 Orientation Mark MAXIMUM RATINGS Parameter 0.51Min. 0.25 (Ta=25℃ ) Unit IF 80 mA VR 5 V IFP 3 A PD 150 mW Collector-Emitter Breakdown Voltage BVCEO 30 V Emitter-Collector Breakdown Voltage BVECO 5 V Collector-Base Breakdown Voltage BVECO 30 V IC 100 mA PC 150 mW Viso AC2500 Vrms Tstg -55~+125 ℃ Topr -30~+100 ℃ Tsol 260 ℃ Ptot 250 mW Peak Forward Current *1 Power Dissipation Collector Current Collector Power Dissipation Input to Output Isolation Voltage *2 Storage Temperature Operating Temperature Lead Soldering Temperature *3 Total Power Dissipation *1. Input current with 300µs pulse width, 2% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 5 4 1 2 3 1.2 Rating Reverse Voltage 6 0.5 2.54 Symbol Forward Current Output 2.7Min. • Interface between two circuits of different potential • Telephone Line Receiver, CMOS Logic Interface • Power Supply Regulators Input PIN NO. AND INTERNAL CONNECTION DIAGRAM 3.8 APPLICATIONS Photocoupler K4N30 ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol (Ta=25℃ Min. , unless otherwise noted) Unit. Typ. Max. Forward Voltage VF IF=10mA - 1.15 1.30 V Reverse Current IR VR=5V - - 10 ㎂ Capacitance CT V=0, f=1MHz - 30 - pF 30 - - V Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 5 - - V Collector-Base Breakdown Voltage BVCBO IC=0.1mA 30 - - V - - 100 nA Collector Dark Current Capacitance Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled Condition Input-Output Capacitance ICEO IF=0, VCE=10V - 10 - pF 100 - - % IF=50mA, IC=2mA - - 1.0 V V=0, f=1MHz - 1 - pF CCE VCE=0, f=1MHz CTR IF=10mA, VCE=10V VCE(SAT) CIO RH=40~60%, V=500V - 10 - Ω Turn-on Time ton VCC=10V, RL=100Ω - - 5 ㎲ Turn-off Time toff IC=50mA, IF=200mA - - 40 ㎲ Input-Output Isolation Resistance RIO *4. CTR=(IC/IF) X 100 (%) 2/3 11 Photocoupler K4N30 Forward Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) 50 40 30 20 10 0 -20 0 20 40 80 60 100 Forward Current IF (mA) 250 60 Forward current IF (mA) Forward Current vs. Forward Voltage 200 150 100 50 0 -20 0 20 40 60 80 Collector Current vs. Collector-Emitter Voltage 100 T a=70℃ 80 60 T a=25℃ 40 T a=-55℃ 20 0 100 0.4 120 100 I F =2mA 80 60 40 0 2 4 6 8 1 VCE =24V 0.1 VCE =10V 0.01 0.001 0 10 20 40 Switching Time Test Circuit V IN R 60 80 Ambient Temperature Ta (℃) Collector-Emitter Voltage V CE (V) 2.0 Ta=25℃ V CE=10V I F =1mA 20 1.6 1000 Collector Current IC (mA) Dark Current ICEO (uA) I F =3mA 140 1.2 Collector Current vs. Forward Current Dark Current vs. Ambient Temperature Ta =25℃I F =4mA 160 0.8 Forward Voltage VF (V) 10 Collector Current IC (mA) 120 Ambient Temperature Ta ( ℃ ) Ambient Temperature Ta (℃) 180 140 VCC RL VO Test Circuit Input Output 10 % 90% Waveform 3/3 100 100 10 1 0.1 1 10 Forward Current I F (mA) 100