LESHAN RADIO COMPANY, LTD. 2-Input OR Gate MC74VHC1G32 The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G32 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G32 to be used to interface 5 V circuits to 3 V circuits. • High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V • Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 60; Equivalent Gates = 15 MARKING DIAGRAMS 5 4 1 2 V4d 3 SC–70/SC–88A/SOT–353 DF SUFFIX CASE 419A Pin 1 d = Date Code 5 Figure 1. Pinout (Top View) 4 V4d 1 2 3 SOT–23/TSOP–5/SC–59 DT SUFFIX CASE 483 Figure 2. Logic Symbol Pin 1 d = Date Code FUNCTION TABLE Inputs PIN ASSIGNMENT 1 2 3 4 5 IN B IN A GND OUT Y V CC A L L H H B L H L H Output Y L H H H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. VH32–1/4 LESHAN RADIO COMPANY, LTD. MC74VHC1G32 MAXIMUM RATINGS Parameter Value Unit – 0.5 to + 7.0 V – 0.5 to 7.0 V V CC=0 – 0.5 to 7.0 V High or Low State –0.5 to V cc + 0.5 I IK Input Diode Current –20 mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA I OUT DC Output Current, per Pin + 25 mA I CC DC Supply Current, V CC and GND +50 mA PD Power dissipation in still air SC–88A, TSOP–5 200 mW θ JA Thermal resistance SC–88A, TSOP–5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias + 150 °C T stg Storage temperature –65 to +150 °C V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A I LATCH–UP Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 DC Supply Voltage DC Input Voltage DC Output Voltage RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time V CC = 3.3 ± 0.3 V V CC = 5.0 ± 0.5 V DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction Temperature °C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE Symbol V CC V IN V OUT Min 2.0 0.0 0.0 – 55 0 0 Max 5.5 5.5 V CC + 125 100 20 Unit V V V °C ns/V 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature VH32–2/4 LESHAN RADIO COMPANY, LTD. MC74VHC1G32 DC ELECTRICAL CHARACTERISTICS Symbol V IH V IL V OH Parameter Test Conditions Minimum High–Level Input Voltage Maximum Low–Level Input Voltage Minimum High–Level Output Voltage V IN = V IH or V IL I OH = – 50 µA V CC (V) T A = 25°C T A < 85°C –55°C<TA<125°C Min Typ Max Min Max Min Max Unit 2.0 3.0 1.5 2.1 1.5 2.1 1.5 2.1 4.5 5.5 3.15 3.85 3.15 3.85 3.15 3.85 V 2.0 3.0 0.5 0.9 0.5 0.9 0.5 0.9 4.5 5.5 1.35 1.65 1.35 1.65 1.35 1.65 2.0 3.0 1.9 2.9 2.0 3.0 1.9 2.9 1.9 2.9 4.5 4.4 4.0 4.4 4.4 I OH = –4 mA I OH = –8 mA 3.0 4.5 2.58 3.94 2.48 3.80 2.34 3.66 V IN = V IH or V IL I OL = 50 µA 2.0 3.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 4.5 0.0 0.1 0.1 0.1 0.36 0.36 0.44 0.44 0.52 0.52 V IN = V IH or V IL V V V IN = V IH or V IL V OL Maximum Low–Level Output Voltage V IN = V IH or V IL V V IN = V IH or V IL I OL = 4 mA I OL = 8 mA 3.0 4.5 I IN Maximum Input Leakage Current V IN = 5.5 V or GND 0 to5.5 ±0.1 ±1.0 ±1.0 µA I CC Maximum Quiescent Supply Current V IN = V CC or GND 2.0 20 40 µA 5.5 AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns Symbol t PLH , t PHL Parameter Maximum Propagation Delay, T A < 85°C –55°C<TA<125°C T A = 25°C Min Typ Max Min Max Min Max Unit Test Conditions V CC = 3.3± 0.3 V C L = 15 pF C L = 50 pF 4.8 6.1 7.9 11.4 9.5 13.0 11.5 15.5 V CC = 5.0± 0.5 V C L = 15 pF 3.7 5.5 6.5 8.0 C L = 50 pF 4.4 5.5 7.5 10 8.5 10 10.0 10 ns Input A or B to Y C IN Maximum Input pF Capacitance Typical @ 25°C, V CC = 5.0 V C PD Power Dissipation Capacitance (Note 6) 11 pF 6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no– load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC . VH32–3/4 LESHAN RADIO COMPANY, LTD. MC74VHC1G32 *Includes all probe and jig capacitance Figure 4. Switching Waveforms Figure 5. Test Circuit DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Temp Circuit Range Technology Device Indicator Function Identifier Package Suffix Tape & Reel Suffix MC74VHC1G32DFT1 MC 74 VHC1G 32 DF T1 MC74VHC1G32DFT2 MC 74 VHC1G 32 DF T2 MC74VHC1G32DFT4 MC 74 VHC1G 32 DF T4 MC74VHC1G32DTT1 MC 74 VHC1G 32 DT T1 MC74VHC1G32DTT3 MC 74 VHC1G 32 DT T3 Package Type (Name/SOT#/ Common Name) Tape and Reel Size SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SOT–23/TSOPS/ SC–59 SOT–23/TSOPS/ SC–59 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit VH32–4/4