DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise 3.8 MIN. : NF = 1.7 dB TYP. @ f = 2 GHz 0.5 ± 0.05 3.8 MIN. E 3.8 MIN. C B NF = 2.6 dB TYP. @ f = 4 GHz • High power gain : GA = 12.5 dB TYP. @ f = 2 GHz @ f = 4 GHz 3.8 MIN. GA = 8.0 dB TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 45 ° PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2 E UNIT 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA PT (TC = 25 °C) 580 mW Junction Temperature Tj 200 °C Storage Temperature Tstg -65 to +150 °C Total Power Dissipation φ 2.1 1.8 MAX. RATING VCBO 0.55 PARAMETER 0.1+0.06 -0.03 SYMBOL Collector to Base Voltage ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 10 V 1.0 µA Emitter Cut-off Current IEBO VEB = 1 V 1.0 µA DC Current Gain hFE VCE = 6 V, IC = 10 mA Pulse Gain Bandwidth Product Reverse Transfer Capacitance Noise Figure Insertion Gain 50 Power Gain Document No. P11673EJ1V0DS00 (1st edition) Date Published August 1996 P Printed in Japan 250 fT VCE = 6 V, IC = 10 mA 10.0 Cre VCB = 10 V, f = 1 MHz 0.2 0.7 pF f = 2 GHz 1.7 2.4 dB f = 4 GHz 2.6 NF Note |S21e| 2 VCE = 6 V, IC = 5 mA VCE = 6 V, IC = 10 mA f = 2 GHz f = 4 GHz Maximum Available Gain 100 MAG GA VCE = 6 V, IC = 10 mA, f = 4 GHz VCE = 6 V, IC = 5 mA 10.5 GHz dB 12.5 dB 7.5 dB 10 dB f = 2 GHz 12.5 dB f = 4 GHz 8.0 dB © 1996 2SC3587 Note Test block diagram Coax. SW Coax. SW Noise Diode Stub Tuner Transistor Under Test Bias Tee Post Amp Bias Tee Mixer NF Meter Network Analyzer * Coax. SW * Sweeper To test 1 GHz or lower, insert a bandpass filter. TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE MAG AND INSERTION GAIN vs. FREQUENCY 0.8 VCE = 6 V IC = 10 mA with heat sink 0.6 Rth(j−e) 90 °C/W 0.4 Rth(j−a) 590 °C/W 0.2 0 50 3 15 |S21e|2 10 5 0 0.2 0.5 1 2 TA - Ambient Temperature - °C f - Frequency - GHz REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 5 10 VCE = 6 V f = 1.0 MHz 2 1 0.7 0.5 0.3 100 50 20 0.2 10 0.5 0.1 1 2 3 5 7 10 20 VCB - Collector to Base Voltage -V 2 MAG 20 −5 0.1 200 150 100 hFE - DC Current Gain Cre - Reverse Transfer Capacitance - pF |S21e|2 - Insertion Gain - dB MAG - Maximum Available Gain - dB PT - Total Power Dissipation - W 25 30 1 5 10 IC - Collector Current - mA 50 2SC3587 INSERTION GAIN vs. COLLECTOR CURRENT 15 NOISE FIGURE vs. COLLECTOR CURRENT 6 5 NF - Noise Figure -dB |S21e|2 - Insertion Gain - dB VCE = 6 V f = 2 GHz 10 3 GHz 4 GHz 5 f = 4 GHz 4 3 f = 2 GHz 2 0 0.5 VCE = 6 V 1 5 10 50 70 1 2 IC - Collector Current - mA 5 10 20 50 IC - Collector Current - mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 fT - Gain Bandwidth Product - GHz VCE = 6 V 20 10 7 5 3 2 1 2 3 5 7 10 IC - Collector Current - mA 20 30 S PARAMETER VCE = 6 V, IC = 10 mA, ZO = 50 Ω f (MHz) |S11| ∠S11 |S21| ∠S21 |S12| ∠S12 |S22| ∠S22 500 1000 .466 .322 -82.1 -123.8 13.209 8.371 120.8 95.7 .0288 .0424 50.9 54.2 .634 .610 -25.0 -29.4 1500 2000 .271 .256 -153.7 -176.6 5.672 4.304 78.7 66.9 .0561 .0697 54.5 54.1 .579 .549 -33.5 -38.7 2500 3000 .262 .270 167.3 152.0 3.456 3.095 58.6 46.1 .0848 .0955 51.9 48.0 .531 .507 -46.2 -52.8 3500 4000 .294 .327 142.0 129.7 2.595 2.231 35.0 27.6 .106 .127 43.2 35.2 .498 .500 -61.0 -68.4 3 2SC3587 S PARAMETER 0.14 90 5 0. NT 0.4 C 30 4 0. 0.8 2 0.2 8 0.2 4.0 1.0 0 5.0 8 0. 0.23 0.27 0.6 0.1 0.4 20 50 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1.2 20 50 0.2 0.2 8 0 1. 5.0 4.0 1.0 0.8 C N TA AC RE JX - O Z 0.6 VE 3. 0 -4 0 0.4 2.0 1.8 1.6 1.4 6 0.3 4 -70 0.35 0.15 1.2 0.1 1.0 3 -80 0.14 0.36 0.9 0.3 7 I 5 0.2 0 -6 -90 0.12 0.13 0.38 0.37 0.11 -100 0.39 -1 2 -11 0 0.40 0.10 30 -1 07 0. 0 0.7 0.1 0.8 18 32 AT 0. 0 -5 0. 0. EG 0.6 31 0. 19 0. M 4 0. 0.2 9 0.2 1 0.3 0 -3 0.2 0 0 0.5 GHz 0.2 8 0.2 2 S22e -20 0. 4 GHz 0.25 0.27 0.23 0.5 GHz 0.6 -10 0.4 0.26 0 0.2 0.24 50 0.25 S11e 0.26 20 0.24 RESTSTANCE COMPONENT R ZO 10 10 10 0.3 0.2 1. 20 4 GHz GTHS 1 0.2 0 3. 0.6 9 0.2 AC TA +J NC E ZO X 0 W A V ELEN 0 O NE 18 32 0.2 PO 0. 0. 50 0.3 M 0.1 7 0.3 3 40 .08 0 .09 0 43 0. 0.4 2 1 0.4 90° 60 0.2 S12 − FREQUENCY VCE = 6 V IC = 10 mA 500 MHz Step 120° 0.5 GHz 4 1.8 1 0.2 S21 − FREQUENCY 6 0.3 2 .0 30 VCE = 6 V IC = 10 mA 500 MHz Step 0.1 70 1.2 0.9 1.0 80 0.1 0.3 0.15 0.35 0.36 19 0. 31 0. 0 TO W 0.01 0.49 0.02 RRD GE 0.48 N 0 0.49 0.0 ELAT 0.01 7 3 0.48 OR 0.4 0.02ARD LOAD N C O O W I E T F C F E I L C O 0.4 F I E 0.0 3 E N T IN 6 7 DE G 0.0 GTHS TNGLE OF R 4 0.4 R A EES EN 0.4 EL -160 4 0 V 0 0.0 6 0. WA 5 5 0.4 15 0 0.4 5 5 0 1 5 0.0 0. NT ME 06 44 NE GA O 0.1 0. 0. 14 TI V MP 44 06 140 E 0 CO 0. RE E 0.37 0.6 43 0. 0 12 0.13 0.35 100 110 0.7 7 0 0. 1 0.4 0.12 0.39 0.8 0 8 0.0 2 0.4 0.11 0.10 0.40 .09 1.4 S11e, S22e − FREQUENCY VCE = 6 V IC = 10 mA 500 MHz Step 90° 120° 60° 60° 4 GHz 150° 150° 30° 30° 0.5 GHz 4 GHz 180° 5 −150° −30° −120° −60° −90° 4 0° 10 180° 0.05 0° 0.1 −150° −30° −120° −60° −90° 2SC3587 [MEMO] 5 2SC3587 [MEMO] 6 2SC3587 [MEMO] 7 2SC3587 The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 6