NEC 2SC3357RE

DATA SHEET
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
PACKAGE DIMENSIONS
The 2SC3357 is an NPN silicon epitaxial transistor designed for
(Unit: mm)
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
4.5±0.1
1.5±0.1
1.6±0.2
FEATURES
0.8 MIN.
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
VCBO
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Thermal Resistance
PT *
Rth(j-a)*
1.2
62.5
W
°C/W
Junction Temperature
Tj
150
°C
−65 to +150
°C
Storage Temperature
Tstg
20
B
0.42
±0.06
• Large PT in Small Package
PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.
Collector to Base Voltage
C
E
V
4.0±0.25
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
2.5±0.1
• Low Noise and High Gain
0.42±0.06
1.5
0.47
±0.06
3.0
−0.03
0.41 +0.05
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
* mounted on 16 cm2 × 0.7 mm Ceramic Substrate
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
©
1985
2SC3357
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
µA
VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
µA
VEB = 1.0 V, IC = 0
DC Current Gain
hFE*
Gain Bandwidth Product
fT
Feed-Back Capacitance
Cre**
50
120
300
6.5
0.65
VCE = 10 V, IC = 20 mA
GHz
1.0
VCE = 10 V, IC = 20 mA
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
S21e
9
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
dB
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
Noise Figure
NF
1.8
dB
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
2
Insertion Power Gain
*
3.0
Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
hFE Classification
Class
RH
RF
RE
Marking
RH
RF
RE
hFE
50 to 100
80 to 160
125 to 250
TYPICAL CHARACTERISTICS (TA = 25 °C)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
f = 1.0 MHz
2.0
Ceramic Substrate
16 cm2 × 0.7 mm
1.0
Free Air
0
Rth(j-a) 312.5 ˚C/W
50
100
TA-Ambient Temperature-°C
2
Cre-Feed-back Capacitance-pF
PT-Total Power Dissipation-W
2
150
1
0.5
0.3
0
0.5
1
2
5
10
VCB-Collector to Base Voltage-V
20
30
2SC3357
DC CURRENT GAIN vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
200
15
VCE = 10 V
f = 1.0 GHz
100
|S21e|2-Insertion Gain-dB
hFE-DC Current Gain
VCE = 10 V
50
20
10
0.5
1
5
10
10
5
0
0.5
50
1
5
10
50 70
IC-Collector Current-mA
IC-Collector Current-mA
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
10
5.0
20
Gmax-Maximum Gain-dB
|S21e|2-Insertion Gain-dB
fT-Gain Bandwidth Product-MHz
Gmax
3.0
2.0
1.0
0.5
0.3
|S21e|2
10
0.2
VCE = 10 V
IC = 20 mA
VCE = 10 V
0.1
0
0
0.5 10
5.0
10
0.1
30
0.2
0.4
0.6 0.8 1.0
IC-Collector Current-mA
f-Frequency-GHz
NOISE FIGURE vs.
COLLECTOR CURRENT
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
7
VCE = 10 V
f = 1.0 GHz
6
IM3
4
−70
IM2, IM3 (dB)
NF-Noise Figure-dB
−80
5
3
2
−60
IM2
−50
0
0.5
1
5
10
IC-Collector Current-mA
50 70
VCE = 10 V
at V0 = 100 dB µ V/50 Ω
Rg = Re = 50 Ω
−40
−30
IM2 f = 90 + 100 MHz
IM3 f = 2 × 200 − 190 MHz
20
30
40
50
60
70
IC-Collector Current-mA
3
2SC3357
S-PARAMETER
VCE = 10 V, IC = 40 mA, ZO = 50 Ω
S11
∠ S11
S21
∠ S21
S12
∠ S12
S22
∠ S22
200
0.196
−94.4
13.023
102.4
0.043
74.5
0.444
−21.1
400
0.103
−118.3
6.852
89.2
0.081
77.4
0.398
−25.3
600
0.056
−131.1
4.632
78.3
0.118
77.5
0.399
−26.9
f (MHz)
800
0.024
−43.7
3.527
75.9
0.152
78.0
0.414
−28.9
1000
0.008
−2.0
2.854
68.7
0.188
78.4
0.440
−33.5
1200
0.039
13.1
2.421
65.7
0.218
75.7
0.461
−33.3
1400
0.072
11.8
2.118
59.0
0.255
71.7
0.479
−36.3
1600
0.102
9.6
1.887
57.1
0.278
73.1
0.499
−35.5
1800
0.129
8.6
1.681
52.5
0.308
71.3
0.515
−38.8
2000
0.151
9.8
1.579
51.4
0.339
71.8
0.537
−35.9
VCE = 10 V, IC = 20 mA, ZO = 50 Ω
S11
∠ S11
S21
∠ S21
S12
∠ S12
S22
∠ S22
200
0.130
−109.2
13.430
98.1
0.042
79.0
0.403
−22.1
400
0.073
−134.1
6.930
87.2
0.081
80.6
0.382
−24.7
600
0.037
−146.6
4.690
79.4
0.119
79.4
0.392
−25.6
800
0.010
177.1
3.560
75.2
0.154
79.7
0.412
−27.1
1000
0.024
23.7
2.878
68.2
0.191
76.5
0.440
−31.9
1200
0.056
17.2
2.439
65.4
0.220
76.8
0.463
−32.3
1400
0.093
13.8
2.133
59.0
0.257
72.9
0.483
−35.7
1600
0.124
12.0
1.898
57.3
0.280
74.0
0.504
−35.3
1800
0.151
11.0
1.693
52.9
0.311
72.4
0.519
−38.4
2000
0.174
13.4
1.591
52.0
0.341
72.8
0.542
−36.3
f (MHz)
4
2SC3357
0.1
6
0.3
4
1.6
0.6
5
0.
2.0
50
4
0.
0
3.
0.6
1
0.2
9
0.2
30
O
0.8
4.0
1.0
0
1.
6.0
0.3
0.6
0.4
20
10
4.0
3.0
1.8
2.0
1.6
1.4
1.2
0.9
1.0
0.7
0.8
0.6
0.5
0.4
0.3
5.0
10
0.27
0.23
0
1.
5.0
)
1.0
E
NC
TA X
AC −J––O–
RE
–Z
4.0
(
0.8
0
0.6
3.
0.
3
−4 0.1 1
0
9
E
IV
AT
NE
G
5
0.4
2.0
1.8
4
0.3
6
0.1
1.6
1.4
0.35
0.15
−70
1.2
3
0.3 7
0
0.36
0.14
−80
1.0
−6
0.9
0.1
−90
0.37
0.13
0.38
0.12
0.8
32
0.2
0.7
0.
0.
0.6
18
0
−5
0.
0.2
8
0.2
2
−20
f = 2.0 GHz
0.
2
9
0.2
1
0.3
−3
0.2 0
0
0
4
−10
8
0.
0.39
0.11
−100
0.40
0.10
−11
0
0.
4
0. 3
07
30
−1
0.4
1
0.0
0.4
9
0.0 2
20 8
−1
S21e-FREQUENCY
CONDITION
IC = 20 mA
IC =0.620 mA
0.2
0.26
0.24
f = 0.2 GHz
0.4
f = 0.2 GHz
0.
50
50
)
20
0.1
(
20
0.25
0.25
REACTANCE COMPONENT
R
––––
0.2
ZO
0
0.2
f = 20 GHz
0.2
WAVELE
NG
0.2
0.8
10
S11
0.1
0.3
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
( –Z–+–J–XTANCE CO
) MPO
0.4
40
N
T
EN
0.
18
32
0.
1.8
0.2
0.1
0.3 7
3
600
1.4
1.2
70
0
0.2 0
0.3
THS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.0 GENE
0.01
7
0.48
3
RA
0.4
0.02 RD LOAD
0.4
0.0TOR
3 HS TOWLAE OF REFLECTION COEFFCIENT IN
6
7
.0
DEG
0NGT ANG
4
0.4
REE
0
E
0.4
6
L
0
S
.0W4AVE −1
6
0 .0
0
5
15
0.4 5
0.4 5
50
0
−1
.0
5
0
0.
0
44
P
.
T
O
0.1
14 0.4 6
SIT
0 06 40
EN
IVE
ON
0
4
RE
MP
0. −1
AC
CO
0.15
0.35
19
0. 31
0.
07
0. 3
4
0. 0
13
1.0
8
0.0 2
0.4 20
1
0.14
0.36
80
90
0.9
VCE = 10 V
0.13
0.37
0.12
0.38
0.11
0.39
100
0.10
0.40
110
0.7
CONDITION
9
0.0
1
0.4
0.8
S11e, S22e-FREQUENCY
S12e-FREQUENCY
VCE = 10 V
IC = 20 mA
CONDITION
90°
90°
120°
VCE = 10 V
IC = 20 mA
120°
60°
f = 0.2 GHz
60°
f = 2.0 GHz
S21e
150°
30°
30°
150°
S12e
f = 2.0 GHz
180°
f = 0.2 GHz
3
6
9
12
15
0° 180°
−30°
−150°
−60°
−120°
−90°
0.1
0.2
0.3
−150°
0.4 0.5
0°
−30°
−60°
−120°
−90°
5
2SC3357
[MEMO]
6
2SC3357
[MEMO]
7
2SC3357
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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Anti-radioactive design is not implemented in this product.
M4 96. 5