NEC 2SC5181-T1

DATA SHEET
SILICON TRANSISTOR
2SC5181
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
PACKAGE DIMENSIONS
(Units: mm)
• Low current consumption and high gain
|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
1.6 ± 0.1
• Ultra Super Mini-Mold package
0.8 ± 0.1
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
VCBO
5
V
Collector to Emitter Voltage
VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
0.3 +0.1
–0
0.5
0.5
1.0
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
0.15 +0.1
–0.05
3 000 units/reel
0 to 0.1
2SC5181-T1
3
1
Embossed tape, 8 mm wide, pin No. 3
(collector) facing the perforation
0.6
50 units/box
ARRANGEMENT
0.75 ± 0.05
2SC5181
1.6 ± 0.1
QUANTITY
84
PART
NUMBER
0.2 +0.1
–0
2
ORDERING INFORMATION
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12105EJ2V0DS00 (2nd edition)
(Previous No. TC-2478)
Date Published November 1996 N
Printed in Japan
©
1994
2SC5181
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
MAX.
UNIT
Collector Cutoff Current
PARAMETER
ICBO
100
nA
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 1 V, IC = 0
DC Current Gain
hFE
70
Insertion Power Gain (1)
|S21e|2
8.0
10.5
dB
VCE = 2 V, IC = 7 mA, f = 2 GHz
Insertion Power Gain (2)
|S21e|2
7.0
9.0
dB
VCE = 1 V, IC = 5 mA, f = 2 GHz
dB
VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (1)
NF
Noise Figure (2)
NF
MIN.
TYP.
VCE = 2 V, IC = 7 mA*1
140
1.5
2.0
1.5
2.0
CONDITIONS
dB
VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
fT
10
13
GHz
VCE = 2 V, IC = 7 mA, f = 2 GHz
Gain Bandwidth Product (2)
fT
8.5
12
GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
Feedback Capacitance
Cre
0.4
0.6
pF
VCB = 2 V, IE = 0 mA, f = 1 MHz*2
*1.
Measured with pulses: Pulse width ≤ 350 µs, duty cycle ≤ 2 %, pulsed
*2.
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
hFE Class
2
SYMBOL
Class
FB
Marking
84
hFE
70 to 140
2SC5181
CHARACTERISTICS CURVES (TA = 25 °C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
Passive air cooling
200
IC – Collector Current – mA
PT – Total Power Dissipation – mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
30 mW
0
50
100
VCE = 2 V
40
30
20
10
0
150
0.5
TA – Ambient Temperature – °C
VBE – Base to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER
500
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
IB = 20 µA
15
10
5
0
fT – Gain Bandwidth Product – GHz
hFE – DC Current Gain
20
1.0
2.0
200
VCE = 2 V
100
50
VCE = 1 V
20
10
3.0
1
2
5
10
20
50
VCE – Collector to Emitter Voltage – V
IC – Collector Current – mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
VCE = 2 V
VCE = 1 V
10
5
1
2
3
5
7
10
IC – Collector Current – mA
20
|S21e|2 – Insertion Power Gain – dB
IC – Collector Current – mA
25
15
1.0
f = 2 GHz
100
VCE = 2 V
10
VCE = 1 V
5
0
1
2
3
5
7 10
20
IC – Collector Current – mA
3
2SC5181
NOISE FIGURE vs.
COLLECTOR CURRENT
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
NF – Noise Figure – dB
f = 2 GHz
VCE = 1 V
2
VCE = 2 V
1
1
2
3
5
7
10
IC – Collector Current – mA
4
20
Cre – Feedback Capacitance – pF
0.8
f = 1 MHz
0.6
0.4
0.2
0.0
2.0
4.0
6.0
8.0
VCB – Collector to Base Voltage – V
10.0
2SC5181
S-PARAMETERS
V CE = 1 V, IC = 1 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
S21
MAG
0.892
0.795
0.704
0.653
0.598
0.524
0.464
0.415
0.355
ANG
–31.5
–40.9
–50.9
–60.1
–66.6
–73.7
–80.6
–88.8
–97.7
MAG
3.159
2.964
2.762
2.674
2.590
2.409
2.285
2.182
2.032
S12
ANG
142.3
130.8
119.7
110.1
103.0
94.9
87.2
81.7
74.6
MAG
0.113
0.152
0.180
0.204
0.228
0.253
0.265
0.270
0.278
S22
ANG
64.7
58.9
53.0
49.8
45.9
42.5
41.3
39.6
35.7
MAG
0.934
0.847
0.759
0.726
0.688
0.636
0.575
0.530
0.495
ANG
–25.9
–32.1
–39.9
–47.4
–53.1
–58.2
–64.2
–68.9
–74.6
V CE = 1 V, IC = 3 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
MAG
0.653
0.517
0.422
0.362
0.301
0.245
0.209
0.175
0.132
S21
ANG
–48.4
–59.5
–68.5
–76.1
–81.4
–88.0
–92.7
–105.8
–121.6
MAG
6.121
5.199
4.502
4.084
3.661
3.279
3.024
2.796
2.535
S12
ANG
124.0
111.4
100.6
92.8
86.8
79.5
74.1
70.4
64.5
MAG
0.095
0.123
0.143
0.165
0.183
0.204
0.220
0.230
0.244
S22
ANG
59.6
55.7
53.0
53.5
51.6
50.1
49.7
50.0
46.8
MAG
0.754
0.629
0.533
0.493
0.448
0.411
0.369
0.334
0.311
ANG
–37.3
–43.1
–49.5
–54.2
–57.6
–61.1
–66.7
–69.5
–75.0
VCE = 1 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
MAG
0.514
0.389
0.307
0.253
0.202
0.157
0.130
0.108
0.077
S21
ANG
–56.3
–66.9
–73.5
–79.7
–85.5
–91.8
–96.2
–116.1
–142.5
MAG
7.156
5.830
4.939
4.391
3.865
3.440
3.155
2.900
2.614
S12
ANG
115.3
103.5
93.6
86.9
81.4
74.7
70.1
67.0
61.5
MAG
0.082
0.109
0.131
0.151
0.175
0.196
0.213
0.227
0.241
S22
ANG
57.8
57.0
56.4
56.4
55.2
53.8
53.5
53.3
50.7
MAG
0.648
0.530
0.446
0.414
0.379
0.347
0.313
0.283
0.268
ANG
–40.3
–44.6
–48.9
–52.5
–55.2
–58.4
–63.6
–65.6
–71.7
V CE = 1 V, IC = 7 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
MAG
0.405
0.305
0.229
0.184
0.141
0.106
0.086
0.071
0.060
S21
ANG
–61.9
–72.5
–78.2
–84.9
–91.4
–98.8
–104.3
–136.6
–174.6
MAG
7.590
6.043
5.059
4.454
3.886
3.455
3.162
2.898
2.606
S12
ANG
109.4
98.4
89.2
83.2
78.0
71.6
67.6
64.6
59.4
MAG
0.077
0.101
0.124
0.145
0.169
0.191
0.210
0.224
0.237
S22
ANG
59.1
59.0
57.9
59.2
57.6
56.2
55.3
55.9
52.7
MAG
0.570
0.469
0.399
0.374
0.347
0.322
0.290
0.264
0.249
ANG
–40.5
–43.6
–46.6
–49.4
–51.8
–54.5
–59.5
–61.4
–67.2
5
2SC5181
V CE = 1 V, IC = 10 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
MAG
0.324
0.232
0.167
0.128
0.094
0.067
0.055
0.068
0.083
S21
ANG
–71.3
–82.5
–89.5
–98.6
–110.3
–127.3
–140.2
–176.6
153.2
MAG
7.550
5.924
4.927
4.307
3.740
3.326
3.041
2.781
2.498
S12
ANG
104.5
94.2
85.5
80.0
74.9
68.7
64.9
62.2
56.9
MAG
0.069
0.096
0.119
0.141
0.165
0.187
0.207
0.219
0.235
S22
ANG
62.8
61.0
59.7
61.4
60.6
58.2
57.6
57.4
54.8
MAG
0.526
0.434
0.375
0.355
0.335
0.314
0.283
0.262
0.247
ANG
–39.4
–40.5
–42.1
–44.8
–47.0
–49.2
–54.0
–56.1
–62.0
V CE = 2 V, IC = 1 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
S21
MAG
0.901
0.811
0.719
0.671
0.621
0.549
0.488
0.438
0.380
ANG
–29.6
–38.5
–47.8
–56.7
–62.9
–69.2
–75.6
–83.6
–91.1
MAG
3.172
2.995
2.797
2.715
2.646
2.467
2.343
2.243
2.095
S12
ANG
143.7
132.6
121.7
112.2
105.3
97.5
89.8
84.3
77.3
MAG
0.106
0.143
0.172
0.196
0.220
0.240
0.255
0.261
0.268
S22
ANG
66.0
59.6
55.0
51.4
47.9
44.4
43.6
41.6
37.8
MAG
0.940
0.861
0.778
0.745
0.712
0.659
0.601
0.556
0.522
ANG
–24.4
–30.3
–37.6
–45.0
–50.5
–55.0
–60.8
–65.6
–70.9
V CE = 2 V, IC = 3 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
6
S11
MAG
0.678
0.543
0.447
0.388
0.325
0.270
0.231
0.193
0.148
S21
ANG
–44.9
–55.3
–63.1
–69.9
–74.0
–78.9
–82.5
–93.2
–103.1
MAG
6.256
5.350
4.650
4.225
3.809
3.408
3.144
2.918
2.647
S12
ANG
125.7
113.4
102.7
94.8
88.9
81.8
76.3
72.7
66.8
MAG
0.088
0.114
0.137
0.157
0.176
0.195
0.214
0.223
0.236
S22
ANG
60.5
56.1
54.8
54.2
53.1
51.3
51.5
51.1
48.8
MAG
0.778
0.656
0.563
0.519
0.481
0.441
0.397
0.363
0.343
ANG
–34.8
–40.4
–46.1
–50.7
–54.5
–57.3
–62.3
–65.0
–70.0
2SC5181
V CE = 2 V, IC = 5 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
MAG
0.539
0.415
0.332
0.280
0.228
0.183
0.157
0.123
0.084
S21
ANG
–51.7
–61.1
–66.2
–71.9
–74.8
–78.2
–80.9
–95.6
–108.3
MAG
7.390
6.057
5.136
4.579
4.043
3.597
3.298
3.042
2.746
S12
ANG
117.1
105.3
95.5
88.7
83.3
76.8
72.2
69.1
63.7
MAG
0.080
0.103
0.125
0.146
0.168
0.187
0.207
0.218
0.232
S22
ANG
61.7
58.5
57.5
58.5
57.3
55.4
55.4
55.5
52.6
MAG
0.676
0.560
0.478
0.445
0.413
0.383
0.345
0.317
0.301
ANG
–37.8
–41.6
–45.6
–49.2
–51.6
–54.0
–58.9
–61.2
–66.0
V CE = 2 V, IC = 7 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
MAG
0.442
0.331
0.257
0.213
0.168
0.132
0.110
0.081
0.048
S21
ANG
–56.3
–65.1
–67.8
–73.1
–74.5
–77.3
–79.7
–99.2
–123.7
MAG
7.920
6.345
5.311
4.689
4.103
3.643
3.335
3.065
2.760
S12
ANG
111.3
100.3
91.1
85.1
80.1
73.8
69.8
66.9
61.7
MAG
0.070
0.097
0.118
0.141
0.162
0.184
0.204
0.214
0.231
S22
ANG
63.0
59.0
57.7
60.4
59.5
58.3
57.4
57.5
54.8
MAG
0.610
0.507
0.434
0.407
0.386
0.359
0.323
0.301
0.286
ANG
–38.1
–40.7
–43.4
–45.9
–48.0
–50.5
–54.8
–56.9
–62.3
V CE = 2 V, IC = 10 mA, Z O = 50 Ω
FREQUENCY
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
S11
MAG
0.358
0.264
0.199
0.158
0.121
0.089
0.073
0.052
0.030
S21
ANG
–60.7
–68.8
–70.8
–75.7
–77.9
–80.4
–82.4
–114.2
–166.0
MAG
8.135
6.411
5.335
4.674
4.068
3.610
3.301
3.027
2.724
S12
ANG
106.8
96.5
87.8
82.4
77.5
71.4
67.8
65.1
59.9
MAG
0.068
0.090
0.113
0.139
0.157
0.180
0.198
0.211
0.228
S22
ANG
61.8
62.0
61.6
62.5
61.1
59.7
59.3
58.9
56.0
MAG
0.565
0.475
0.414
0.392
0.377
0.352
0.321
0.298
0.286
ANG
–36.5
–38.3
–40.1
–42.2
–44.8
–46.6
–50.6
–52.5
–58.0
7
2SC5181
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
8