NEC 2SC5509

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
• Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
• fT = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5509
50 pcs (Non reel)
• 8 mm wide embossed taping
2SC5509-T2
3 kpcs/reel
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
100
mA
190
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free Air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10009EJ01V0DS (1st edition)
Date Published October 2001 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices 2001
2SC5509
THERMAL RESISTANCE
Parameter
Symbol
Ratings
Unit
Junction to Case Resistance
Rth j-c
95
°C/W
Junction to Ambient Resistance
Rth j-a
650
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
600
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
−
−
600
nA
VCE = 2 V, IC = 10 mA
50
70
100
−
VCE = 3 V, IC = 90 mA, f = 2 GHz
13
15
−
GHz
VCE = 2 V, IC = 50 mA, f = 2 GHz
8
11
−
dB
VCE = 2 , IC = 10 mA, f = 2 Hz,
ZS = Zopt
–
1.2
1.7
dB
hFE
DC Current Gain
Note 1
RF Characteristics
Gain Bandwidth Product
fT
S21e
2
Insertion Power Gain
Noise Figure
NF
Reverse Transfer Capacitance
Cre
Note 2
Maximum Available Power Gain
MAG
Note 3
Maximum Stable Power Gain
MSG
Note 4
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
PO (1 dB)
OIP3
VCB = 2 V, IE = 0 mA, f = 1 MHz
−
0.5
0.75
pF
VCE = 2 V, IC = 50 mA, f = 2 GHz
−
14
−
dB
VCE = 2 V, IC = 50 mA, f = 2 GHz
−
15
−
dB
VCE = 2 V, IC = 70 mA
Note 5
−
17
−
dBm
VCE = 2 V, IC = 70 mA
Note 5
−
27
−
dBm
, f = 2 GHz
, f = 2 GHz
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
S21
(K – √ (K2 – 1) )
S12
4. MSG =
S21
S12
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
2
Rank
FB
Marking
T80
hFE Value
50 to 100
Data Sheet PU10009EJ01V0DS
2SC5509
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C)
Thermal/DC Characteristics
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
50
When case temperature
is specified
350
VCE = 2 V
330
Collector Current IC (mA)
Total Power Dissipation Ptot (mW)
400
300
Mounted on
250 ceramic substrate
(15 × 15 mm, t = 0.6 mm)
200
190
150
Free Air
100
30
20
10
50
0
25
50
75
100
125
0
150
0.2
0.4
0.6
0.8
1.0
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
50
0
200
DC Current Gain hFE
150
Collector Current IC (mA)
40
0 µA
IB = 1 10 µ A
1 000
900 µ A
800 µ A
700 µ A
600 µ A
500 µ A
400 µ A
300 µ A
200 µ A
100 µ A
1
2
3
4
VCE = 2 V
150
100
50
0
0.001
5
1.2
0.01
0.1
1
10
100
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
Capacitance/fT Characteristics
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1.00
30
f = 1 MHz
0.80
0.60
0.40
0.20
0
1.0
2.0
3.0
4.0
5.0
Gain Bandwidth Product fT (GHz)
Reverse Transfer Capacitance Cre (pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
25
VCE = 3 V
f = 2 GHz
20
15
10
5
0
1
Collector to Base Voltage VCB (V)
10
100
1 000
Collector Current IC (mA)
Data Sheet PU10009EJ01V0DS
3
2SC5509
Gain Characteristics
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
VCE = 2 V
IC = 50 mA
35
30
MSG
MAG
25
20
15
10
|S21e|2
5
0
0.1
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
25
MSG
MAG
20
15
|S21e|
2
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 2 V
f = 2 GHz
20
MSG
MAG
15
10
|S21e|2
5
0
1
10
Collector Current IC (mA)
100
Collector Current IC (mA)
Output Characteristics
Pout
15
150
25
125
20
100
IC
10
75
5
50
0
25
–5
–15
–10
–5
0
5
10
0
15
Output Power Pout (dBm)
20
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
Output Power Pout (dBm)
25
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
125
Pout
15
100
10
75
5
50
IC
0
–5
–15
Input Power Pin (dBm)
4
150
VCE = 2 V
f = 2 GHz
–10
–5
0
25
5
Input Power Pin (dBm)
Data Sheet PU10009EJ01V0DS
10
0
15
Collector Current IC (mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
2SC5509
Noise Characteristics
6.0
6.0
20
Ga
3.0
15
2.0
10
5
1.0
25
20
4.0
Ga
3.0
15
2.0
10
5
1.0
NF
NF
1
0
100
10
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
25
20
4.0
Ga
3.0
15
10
2.0
1.0
NF
1
10
5
6.0
0
100
30
VCE = 2 V
f = 2.5 GHz
5.0
Noise Figure NF (dB)
VCE = 2 V
f = 2 GHz
5.0
Noise Figure NF (dB)
1
Collector Current IC (mA)
6.0
0.0
0.0
0
100
10
Associated Gain Ga (dB)
0.0
25
20
4.0
15
3.0
Ga
10
2.0
1.0
0.0
NF
1
Collector Current IC (mA)
10
5
Associated Gain Ga (dB)
4.0
30
VCE = 2 V
f = 1.5 GHz
5.0
Noise Figure NF (dB)
25
Associated Gain Ga (dB)
30
VCE = 2 V
f = 1 GHz
5.0
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain Ga (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10009EJ01V0DS
5
2SC5509
S-PARAMETERS
VCE = 2 V, IC = 5 mA
Frequency
6
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.79
0.75
0.73
0.71
0.69
0.68
0.67
0.67
0.67
−28.2
−53.3
−74.8
−92.9
−108.1
−121.0
−132.0
−141.6
−149.9
14.75
13.32
11.81
10.40
9.18
8.15
7.28
6.55
5.94
161.9
147.0
134.8
124.5
116.0
108.6
102.3
96.6
91.5
0.03
0.05
0.07
0.08
0.09
0.09
0.10
0.10
0.10
72.3
60.2
50.9
42.8
36.7
31.7
27.8
24.7
21.8
0.93
0.84
0.74
0.65
0.58
0.51
0.46
0.42
0.38
−19.5
−35.9
−49.6
−61.4
−71.5
−80.4
−88.6
−96.2
−103.3
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.67
0.67
0.67
0.67
0.67
0.68
0.68
0.69
0.69
0.69
−157.3
−164.0
−170.0
−175.5
179.5
174.7
170.4
166.2
162.4
158.8
5.42
4.97
4.59
4.25
3.96
3.70
3.47
3.26
3.07
2.90
86.9
82.6
78.6
74.9
71.3
67.9
64.6
61.4
58.4
55.5
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
19.7
17.7
16.0
14.6
13.4
12.3
11.3
10.4
9.6
8.9
0.35
0.33
0.31
0.30
0.29
0.28
0.27
0.27
0.27
0.27
−110.1
−116.6
−123.0
−129.1
−134.9
−140.6
−146.1
−151.4
−156.5
−161.2
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0.70
0.71
0.71
0.72
0.72
0.72
0.73
0.72
0.73
0.73
155.2
152.2
148.9
146.0
143.3
140.4
137.9
135.3
133.7
132.1
2.74
2.60
2.47
2.35
2.24
2.14
2.03
1.93
1.84
1.79
52.6
49.8
47.1
44.4
41.8
39.2
36.7
34.4
33.0
31.3
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
8.4
7.7
7.0
6.5
6.0
5.5
4.8
4.9
7.1
8.4
0.27
0.27
0.27
0.28
0.28
0.29
0.29
0.30
0.29
0.28
−165.8
−170.2
−174.2
−178.1
178.2
174.6
170.4
165.9
162.7
162.4
3.0
4.0
0.74
0.80
130.0
121.2
1.73
1.27
29.1
16.5
0.11
0.12
8.0
9.0
0.29
0.38
161.5
149.8
Data Sheet PU10009EJ01V0DS
2SC5509
VCE = 2 V, IC = 10 mA
Frequency
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.65
0.63
0.63
0.62
0.62
0.63
0.63
0.63
0.64
−42.0
−75.4
−100.3
−118.7
−132.8
−144.0
−153.1
−160.9
−167.5
23.47
19.87
16.55
13.88
11.82
10.22
8.97
7.96
7.15
156.3
138.3
125.1
115.1
107.2
100.7
95.1
90.3
86.0
0.03
0.04
0.05
0.06
0.07
0.07
0.07
0.07
0.08
67.9
53.8
45.8
39.3
35.3
32.5
30.7
29.3
28.2
0.88
0.75
0.63
0.54
0.48
0.43
0.40
0.37
0.36
−29.3
−52.4
−70.5
−85.4
−97.8
−108.7
−118.3
−127.1
−135.0
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.64
0.65
0.65
0.65
0.66
0.67
0.67
0.68
0.68
0.69
−173.5
−178.7
176.5
172.1
168.0
164.2
160.7
157.2
154.0
151.0
6.47
5.89
5.41
4.99
4.63
4.32
4.04
3.79
3.56
3.36
82.0
78.4
75.0
71.7
68.6
65.6
62.8
60.0
57.3
54.7
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.10
27.5
26.8
26.5
25.9
25.6
25.3
24.8
24.3
23.9
23.4
0.34
0.34
0.33
0.33
0.33
0.33
0.33
0.33
0.34
0.34
−142.2
−148.8
−154.9
−160.6
−165.8
−170.6
−175.0
−179.2
176.9
173.3
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0.69
0.70
0.70
0.71
0.71
0.72
0.72
0.72
0.72
0.73
148.0
145.4
142.6
140.1
137.7
135.1
132.9
130.5
129.0
127.8
3.17
3.01
2.86
2.71
2.58
2.46
2.34
2.22
2.11
2.05
52.1
49.7
47.3
44.9
42.5
40.2
37.9
35.8
34.6
33.1
0.10
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
23.1
22.7
21.9
21.4
20.9
20.2
19.6
19.7
21.2
21.6
0.35
0.35
0.36
0.37
0.37
0.38
0.39
0.39
0.39
0.38
169.8
166.7
163.7
160.8
158.0
155.2
152.2
148.9
145.9
145.0
3.0
4.0
5.0
0.74
0.80
0.83
126.0
118.7
107.5
1.99
1.45
1.09
31.1
19.9
5.8
0.12
0.13
0.14
20.6
17.6
13.1
0.39
0.47
0.53
144.3
136.2
125.3
Data Sheet PU10009EJ01V0DS
7
2SC5509
VCE = 2 V, IC = 20 mA
Frequency
8
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.50
0.54
0.57
0.59
0.60
0.61
0.61
0.62
0.63
−63.8
−103.8
−127.4
−142.7
−153.8
−162.3
−169.2
−175.1
179.8
33.35
25.91
20.30
16.37
13.60
11.58
10.05
8.86
7.91
149.5
129.5
116.5
107.3
100.5
94.9
90.1
86.0
82.2
0.02
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
64.8
50.4
44.2
41.0
39.5
39.0
38.8
38.9
38.8
0.81
0.65
0.55
0.48
0.44
0.42
0.40
0.39
0.39
−41.4
−71.4
−93.1
−109.7
−122.8
−133.6
−142.6
−150.4
−157.1
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.63
0.64
0.64
0.65
0.66
0.66
0.67
0.67
0.68
0.68
175.2
171.1
167.2
163.7
160.3
157.1
154.1
151.2
148.5
145.8
7.12
6.47
5.93
5.46
5.06
4.70
4.40
4.12
3.87
3.65
78.8
75.6
72.5
69.6
66.9
64.1
61.6
59.0
56.5
54.2
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.09
0.09
0.09
38.8
38.7
38.6
38.3
38.0
37.5
37.0
36.3
35.7
35.0
0.38
0.38
0.38
0.39
0.39
0.40
0.40
0.41
0.41
0.42
−163.0
−168.3
−173.1
−177.5
178.5
174.8
171.4
168.2
165.1
162.2
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0.69
0.70
0.70
0.71
0.71
0.72
0.72
0.72
0.72
0.72
143.2
140.9
138.4
136.2
134.0
131.6
129.6
127.3
125.8
124.9
3.44
3.26
3.10
2.94
2.80
2.66
2.53
2.41
2.28
2.22
51.8
49.5
47.3
45.1
42.9
40.7
38.6
36.6
35.5
34.4
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.12
34.3
33.5
32.5
31.7
30.8
29.8
28.9
28.6
29.6
29.9
0.42
0.43
0.44
0.45
0.45
0.46
0.47
0.48
0.47
0.46
159.5
156.9
154.4
152.0
149.6
147.3
144.8
142.0
139.1
138.1
3.0
4.0
5.0
0.74
0.80
0.83
123.4
116.8
106.4
2.16
1.54
1.16
32.4
22.1
8.9
0.12
0.13
0.14
28.1
23.2
15.7
0.47
0.55
0.60
137.6
130.3
119.8
Data Sheet PU10009EJ01V0DS
2SC5509
VCE = 2 V, IC = 50 mA
Frequency
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.39
0.51
0.56
0.58
0.60
0.61
0.62
0.62
0.63
−99.2
−133.4
−150.6
−161.3
−169.1
−175.2
179.7
175.2
171.3
41.74
29.88
22.35
17.59
14.41
12.16
10.50
9.22
8.20
143.0
122.2
110.1
102.0
96.0
91.0
86.9
83.2
79.8
0.02
0.03
0.03
0.03
0.04
0.04
0.05
0.05
0.05
59.2
50.6
48.2
47.8
48.3
48.7
49.1
49.6
49.7
0.71
0.57
0.50
0.46
0.44
0.43
0.43
0.43
0.43
−55.1
−90.5
−113.6
−129.7
−141.6
−150.8
−158.3
−164.6
−169.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.64
0.64
0.65
0.65
0.66
0.67
0.67
0.68
0.68
0.69
167.6
164.2
161.0
158.0
155.2
152.4
149.8
147.1
144.8
142.4
7.38
6.70
6.12
5.63
5.21
4.84
4.52
4.23
3.98
3.75
76.7
73.7
70.9
68.2
65.6
63.1
60.7
58.3
55.9
53.7
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.09
0.09
0.09
49.5
49.0
48.7
48.0
47.2
46.5
45.5
44.4
43.5
42.3
0.43
0.43
0.44
0.44
0.45
0.45
0.46
0.46
0.47
0.48
−174.7
−178.9
177.3
173.8
170.5
167.4
164.5
161.8
159.1
156.7
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0.70
0.70
0.71
0.71
0.72
0.72
0.73
0.73
0.72
0.72
140.0
137.9
135.6
133.5
131.5
129.3
127.4
125.1
123.4
122.9
3.54
3.35
3.18
3.02
2.87
2.73
2.60
2.47
2.33
2.26
51.5
49.3
47.2
45.1
43.0
40.9
38.9
36.9
35.8
35.1
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.12
41.3
40.1
38.9
37.8
36.6
35.4
34.4
33.6
34.3
34.4
0.48
0.49
0.50
0.51
0.51
0.52
0.53
0.53
0.53
0.52
154.2
152.0
149.8
147.6
145.5
143.4
141.1
138.6
135.7
134.7
3.0
4.0
5.0
0.74
0.81
0.84
121.6
115.4
105.2
2.21
1.52
1.14
33.2
23.2
10.8
0.13
0.14
0.15
32.2
25.7
17.6
0.53
0.62
0.66
134.4
126.9
126.5
Data Sheet PU10009EJ01V0DS
9
2SC5509
EQUAL NF CIRCLE
VCE = 2 V
IC = 10 mA
f = 1 GHz
Unstable Area
NFmin = 0.95 dB
Γopt
1.5 dB
2.0 dB
2.5 dB
3.0 dB
3.5 dB
4.0 dB
VCE = 2 V
IC = 10 mA
f = 2 GHz
NFmin = 1.1 dB
Γopt
1.5 dB
B
2.0 d
dB
2.5 .0 dB dB B
3 3.5 .0 d
4
10
Data Sheet PU10009EJ01V0DS
2SC5509
NOISE PARAMETERS
VCE = 2 V, IC = 5 mA
f
VCE = 2 V, IC = 20 mA
NFmin
Γopt
Ga
Rn/50
f
NFmin
Γopt
Ga
Rn/50
(GHz)
(dB)
(dB)
MAG.
ANG.
(GHz)
(dB)
(dB)
MAG.
ANG.
0.8
0.70
18.0
0.17
93.0
0.11
0.8
1.12
20.7
0.30
−164.8
0.08
0.9
0.74
17.0
0.18
103.0
0.11
0.9
1.15
19.7
0.31
−162.7
0.09
1.0
0.78
16.2
0.20
112.7
0.11
1.0
1.18
18.8
0.32
−160.7
0.09
1.5
0.98
13.6
0.32
155.4
0.09
1.5
1.31
15.7
0.39
−151.5
0.10
1.8
1.10
12.5
0.40
176.2
0.07
1.8
1.38
14.4
0.45
−146.3
0.10
1.9
1.14
12.2
0.43
−177.8
0.06
1.9
1.41
14.0
0.47
−144.6
0.10
2.0
1.18
11.8
0.46
−172.2
0.06
2.0
1.43
13.6
0.49
−142.9
0.11
2.5
1.39
9.9
0.56
−151.8
0.08
2.5
1.56
11.5
0.56
−133.5
0.14
VCE = 2 V, IC = 10 mA
f
NFmin
VCE = 2 V, IC = 50 mA
Γopt
Ga
Rn/50
f
NFmin
Γopt
Ga
Rn/50
(GHz)
(dB)
(dB)
MAG.
ANG.
(GHz)
(dB)
(dB)
MAG.
ANG.
0.8
0.87
19.6
0.13
170.3
0.09
0.8
1.75
21.3
0.49
−159.4
0.10
0.9
0.90
18.6
0.15
171.5
0.09
0.9
1.78
20.3
0.49
−157.2
0.10
1.0
0.93
17.8
0.17
173.0
0.09
1.0
1.80
19.4
0.50
−154.9
0.11
1.5
1.07
14.8
0.30
−174.1
0.08
1.5
1.92
16.2
0.55
−144.7
0.14
1.8
1.15
13.6
0.39
−164.1
0.07
1.8
2.00
14.8
0.59
−139.1
0.17
1.9
1.18
13.2
0.41
−160.6
0.07
1.9
2.02
14.4
0.60
−137.3
0.19
2.0
1.20
12.8
0.44
−157.2
0.07
2.0
2.04
13.9
0.61
−135.5
0.20
2.5
1.35
10.9
0.53
−142.3
0.10
2.5
2.17
11.8
0.65
−126.4
0.28
Data Sheet PU10009EJ01V0DS
11
2SC5509
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (UNIT: mm)
0.65
0.30
0.11+0.1
–0.05
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
Data Sheet PU10009EJ01V0DS
1.30
0.65
3
4
1
0.30+0.1
–0.05
0.59 ± 0.05
PIN CONNECTIONS
12
+0.1
–0.05
0.60
0.65
1.25
T80
2.0 ± 0.1
2
1.25 ± 0.1
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05 ± 0.1
2SC5509
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235°C or below,
Time: 30 seconds or less (at 210°C or higher),
Note
Count: 2 times or less, Exposure limit: None
IR30-00-2
VPS
Package peak temperature: 215°C or below,
Time: 40 seconds or less (at 200°C or higher),
Note
Count: 2 times or less, Exposure limit: None
VP15-00-2
Wave Soldering
Soldering bath temperature: 260°C or below,
Time: 10 seconds or less,
Note
Count: 1 time, Exposure limit: None
WS60-00-1
Note After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE
MOUNTING TECHNOLOGY MANUAL (C10535E: published by NEC Corporation).
Data Sheet PU10009EJ01V0DS
13
2SC5509
• The information in this document is current as of October, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
14
Data Sheet PU10009EJ01V0DS
2SC5509
Business issue
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected]
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
FAX: +852-3107-7309
TEL: +852-3107-7303
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
FAX: +82-2-528-0302
TEL: +82-2-528-0301
NEC Electron Devices European Operations
http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd.
http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: [email protected] FAX: +81-44-435-1918
0110