DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A in millimeters 4.5 ± 0.1 ABSOLUTE MAXIMUM RATINGS 1.5 ± 0.1 0.42 ± 0.06 B 4.0 ± 0.25 C E 2.5 ± 0.1 V V A A A 0.8 MIN. 1.6 ± 0.2 Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A Collector to Base Voltage VCBO 60 120 Collector to Emitter Voltage VCEO 50 60 Emitter to Base Voltage VEBO 6 Collector Current (DC) IC 1 Collector Current (Pulse)* IC 2 Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature** PT 2.0 Maximum Temperatures Junction Temperature Tj 150 –55 to +150 Storage Temperature Range Tstg 0.42 ± 0.06 1.5 W 0.47 ± 0.06 3.0 ˚C ˚C 0.03 0.41+– 0.05 1. Emitter 2. Collector 3. Base * PW ≤ 10 ms, Duty Cycle ≤ 50 % ** When mounted on ceramic substrate of 16 cm2 × 0.7 mm ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current SYMBOL MIN. TYP. ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1*** DC Current Gain hFE2*** Collector Saturation Voltage VCE(sat)*** Base Saturation Voltage VBE(sat)*** Base to Emitter Voltage VBE*** Gain Bandwidth Product fT Output Capacitance Cob 135 290 135 81 TEST CONDITIONS 100 nA 2SD1615 VCB = 60 V, IE = 0 100 nA 2SD1615A VCB = 120 V, IE = 0 100 nA VEB = 6.0 V, IC = 0 600 2SC1615 400 2SD1615A 270 0.15 VCE = 2.0 V, IC = 100 mA VCE = 2.0 V, IC = 1.0 A V IC = 1.0 A, IB = 50 mA 1.2 V IC = 1.0 A, IB = 50 mA 700 mV VCE = 2.0 V, IC = 50 mA 160 MHz VCE = 2.0 V, IE = –100 mA 19 pF 0.9 600 80 MAX. UNIT 0.3 VCB = 10 V, IE = 0, f = 1.0 MHz *** Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 % hFE Classification MARKING 2SD1615 2SD1615A h FE Document No. D10198EJ3V0DSD0 (3rd edition) (Previous No. TC-5810A) Date Published June 1995 P Printed in Japan GM GL GQ GP 135 to 270 200 to 400 GK 300 to 600 © 1985 2SD1615, 2SD1615A TYPICAL CHARACTERISTICS (TA = 25 ˚C) SAFE OPERATING AREA (TRANSIENT THERMAL RESISTANCE METHOD) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 5 2.5 1 pulse nm he ic ram ce on te tra bs su 1.0 m s DC 0.2 0.1 0.05 .7 ×0 out h 0 eats mm ink 2SD1615A 2 with cm 16 of 0.5 20 0.5 2SD1615 IC – Collector Current – A 1 d nte ou PT – Total Power Dissipation – W W 1.5 0 s m =1 PW s m 10 2 2.0 0.02 40 80 120 160 TA – Ambient Temperature – ˚C 200 0.01 1 2 5 10 20 50 VCE – Collector to Emitter Voltage – V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 1.0 300 µA 5.0 mA 4.5 mA A 0 4. 200 µ A 200 µA 60 150 µ A 100 µA IB = 50 µA 20 0 mA 2 4 6 8 10 1.5 mA 0.4 200 100 50 20 10 5 1 IC – Collector Current – A IB = 0.5 mA 0.2 0 2 5 10 VCE(sat) – Collector Saturation Voltage – V VBE(sat) – Base Saturation Voltage – V VCE = 2.0 V 0.5 1.0 mA 0.2 0.4 0.6 0.8 1.0 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 500 0.05 0.1 0.2 2.5 mA VCE(sat) – Collector Saturation Voltage – V 1000 0.01 0.02 3.0 mA 2.0 mA DC CURRENT GAIN vs. COLLECTOR CURRENT hEF – DC Current Gain 3.5 0.6 VCE – Collector to Emitter Voltage – V 2 m 0.8 IC – Collector Current – A IC – Collector Current – mA 80 40 100 IC = 20·IB 2 1 VBE(sat) 0.5 0.2 0.1 0.05 t) sa E( VC 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 IC – Collector Current – A 2 5 10 2SD1615, 2SD1615A GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000 OUTPUT CAPCITANCE vs. COLLECTOR TO BASE VOLTAGE 100 VEC = 2.0 V Cob – Output Capacitance – pF fT – Gain Bandwidth Product – MHZ 500 200 100 50 20 10 5 IE = 0 f = 1.0 MHZ 50 20 10 5 2 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 IC – Collector Current – A 5 10 1 2 5 10 20 50 VCB – Collector to Base Voltage – V 100 SWITCHING TIME vs. COLLECTOR CURRENT VCC = 10 V IC = 10.IBI = –10.IB2 VBE(off) . = –2 to 3 V PW =. 2 µs Duty Cycle ≤ 2 % 2 t – Switching Time – µs 1 tstg 0.5 0.2 0.1 tf ton 0.05 0.01 0.02 0.05 0.1 0.2 IC – Collector Current – A 0.5 1 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 3 2SD1615, 2SD1615A [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11