DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • High DC Current Gain: hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 ± 0.2 0.4 +0.1 –0.05 • High Voltage: VCEO = 50 V 0.65 +0.1 –0.15 1.5 VCBO Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC 100 mA at 25 ˚C Ambient Temperature PT 200 mW 150 ˚C 2 1 3 0.4 +0.1 –0.05 V Collector to Base Voltage 0.95 60 2.9 ± 0.2 Maximum Voltages and Current (TA = 25 ˚C) 0.95 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Total Power Dissipation Tj Storage Temperature Range Tstg –55 to +150 ˚C 1: Emitter 2: Base 3: Collector ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 0 to 0.1 Junction Temperature 1.1 to 1.4 Maximum Temperatures 0.16 +0.1 –0.06 0.3 Marking TEST CONDITIONS Collector Cutoff Current ICBO 0.1 µA VCB = 60 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µA VEB = 5.0 V, IC = 0 DC Current Gain hFE 90 200 600 VCE = 6.0 V, IC = 1.0 mA* Collector Saturation Voltage VCE(sat) 0.15 0.3 V IC = 100 mA, IB = 10 mA* Base to Saturation Voltage VBE(sat) 0.86 1.0 V IC = 100 mA, IB = 10 mA* 0.62 0.65 V VCE = 6.0 V, IC = 1.0 mA* VCE = 6.0 V, IE = –10 mA Base Emitter Voltage Gain Bandwidth Product Output Capacitance VBE 0.55 fT 250 MHz Cob 3.0 pF VCB = 6.0 V, IE = 0, f = 1.0 MHz * Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 % hFE Classification Marking L4 L5 L6 L7 hFE 90 to 180 135 to 270 200 to 400 300 to 600 Document No. TC-1481C (O.D. No. TC-5172C) Date Published July 1995 P Printed in Japan © 1984 2SC1623 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW 200 180 Free air 160 140 120 100 80 60 40 20 0 –20 0 20 40 60 80 100 120 140 160 180 TA - Ambient Temperature - ˚C ICBO (TA) - Normalized Collector Cutottt Current ICBO (TA = 25 ˚C) TYPICAL CHARACTERISTICS (TA = 25 ˚C) NORMALIZED COLLECTOR CUTOFF CURRENT vs. AMBIENT TEMPERATURE 10000 5000 2000 1000 500 200 100 50 20 10 5 2 1 0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 80 60 40 0.3 0.2 40 IB = 0.1 mA 20 0 0 0 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 45 10 1.0 0.98 0. 7 0. 0.6 0.5 0.4 IC - Collector Current - mA IC - Collector Current - mA 100 20 0.4 0.8 1.2 1.6 VCE - Collector to Emitter Voltage - V 8 30 6 25 20 4 15 10 2 0 2.0 35 IB = 5.0 µA 0 0 10 20 30 40 VCE - Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT 50 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 6.0 V Pulsed 500 300 100 1000 VCE = 6.0 V 1.0 V 0.5 V 50 30 10 5 3 0.1 0.2 2 hFE - DC Current Gain hFE - DC Current Gain 1000 500 300 TA = 75 ˚C 25 ˚C –25 ˚C 100 50 30 10 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 5 3 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 2SC1623 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VBE(sat) - Base Saturation Voltage - V VCE(cat) - Collector Saturation Voltage - V 100 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.3 ˚C –25 TA = 75 ˚C 5 2 1 25 ˚ C IC - Collector Current - mA VCE = 6.0 V 50 Pulsed 20 10 0.4 0.5 0.6 0.7 0.8 0.9 VBE - Base to Emitter Voltage - V 1.0 10 1 0.2 IC = 50 · IB VCE(sat) 0.1 20 10 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 IC - Collector Current - mA 100 2000 1000 VCE =10 V 6 V 500 200 2V 1V 100 50 20 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 IE - Emitter Current - mA 20 5 E 2 0.5 0.5 1 2 5 10 20 50 100 VCB - Collector to Base Voltage - V VEB - Emittor to Base Voltage - V 1000 80 60 40 20 0 40 30 20 10 0 50 hie - Input Impedance - kΩ hoe - Output Admittance - µS 200 400 600 800 hFE - DC Current Gain = 0) 1 50 hre - Voltage Feedback Ratio - ×10–4 100 400 200 = 0) INPUT IMPEDANCE VOLTAGE FEEDBACK RATIO AND OUTPUT ADMITTANCE vs. SMALL SIGNAL CURRENT GAIN 600 0 C Cob (I 0.2 0.1 0.1 0.2 –50 –100 VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 800 Cib (I 10 SMALL SIGNAL CURRENT GAIN vs. DC CURRENT GAIN 1000 50 100 f = 1.0 MHz 50 5000 Cib - Input Capacitance - pF Cob - Output Capacitance - pF fT - Gain Bandwidth Product - MHz VBE(sat) 0.5 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 10000 hfe - Small Signal Current Gain IC = 50 · IB 20 10 2 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 0 Pulsed 5 VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 40 30 20 hoe hre hie 10 0 200 400 600 800 hfe - Small Signal Current Gain 1000 3 2SC1623 NORMALIZED h-PARAMETER vs. COLLECTOR CURRENT 10 hre He - Normalized h - Parameter He - Normalized h - Parameter 5 hoe 2 hfe hfe 0.5 hoe hre 0.2 0.1 4 3 VCE = 6.0 V f = 1.0 kHz he(IC) He = he(IC = 1.0 mA) hie 1 NORMALIZED h-PARAMETER vs. COLLECTOR TO EMITTER VOLTAGE ICE = 1.0 V f = 1.0 kHz He = he(VCE) he(VCE = 6 V) 2 hoe hre hfe hie hre 1 hfe hie hoe hie 0.1 0.2 0.5 1 2 IC - Collector Current - mA 5 10 0 10 20 VCE - Collector to Emitter Voltage - V 30 2SC1623 [MEMO] 5 2SC1623 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11