DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Volteage VCB0 VCE0 30 V 30 V Emitter to Base Voltage Collector Current (DC) VEB0 IC(DC) 6.0 V 5.0 A Collector Current (Pulse)* Base Current (DC) IC(Pulse) IB(DC) 10 A 2.0A * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) PT PT Maximum Temperature Junction Temperature 10 W 1.0 W 150 °C Tj Storage Temperature Tstg −55 to 150 °C 1 2 3 1.2 (0.047) φ 3.2 ± 0.2 (φ 0.126) Maximum Voltage and Current (TA = 25 °C) 12.0 MAX. (0.472 MAX.) ABSOLUTE MAXIMUM RATINGS 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 2.5 ± 0.2 (0.098) 13.0 MIN. (0.512 MIN.) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 0.55+0.08 −0.05 (0.021) 0.8 +0.08 −0.05 (0.031) 2.3 2.3 (0.090) (0.090) 1.2 (0.047) 1. Emitter 2. Collector connected to mounting plane 3. Base ELECTRICAL CHARACTERISTICS (TA = 25 °C) MAX. UNIT Collector Cutoff Currnet CHARACTERISTICS ICB0 VCB = 30 V, IE = 0 100 nA Emitter Cutoff Current IEB0 VEB = 6.0 V, IC = 0 100 nA DC Current Gain hFE1 VCE = 2.0 V, IC = 1.0 A 150 600 − 50 DC Current Gain SYMBOL TEST CONDITIONS MIN. TYP. − hFE2 VCE = 2.0 V, IC = 4.0 A Collector Saturation Voltage VCE(sat)1 IC = 1.0 A, IB = 50 mA 0.07 0.15 V Collector Saturation Voltage VCE(sat)2 IC = 2.0 A, IB = 0.1 A 0.13 0.25 V Collector Saturation Voltage VCE(sat)3 IC = 4.0 A, IB = 0.2 A 0.24 0.50 V Base Saturation Voltage VBE(sat) IC = 2.0 A, IB = 0.1 A 0.86 1.50 V Gain Bandwidth Product fT VCE = 10 V, IE = 50 mA 120 MHz VCB = 10 V, IE = 0, f = 1 MHz 77 pF Output Capacitance Cob The information in this document is subject to change without notice. Document No. D10628EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 2SD2583 dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 S/b Lim ite d 60 Di ss 40 ip at io n Li m ite d 20 0 20 40 60 80 100 120 140 160 TC -Case Temperature - °C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 14 PT - Total Power Dissipation - W 12 10 8 6 4 2 0 20 40 60 80 100 TC -Case Temperature - °C 2 120 140 160 2SD2583 FORWARD BIAS SAFE OPERATING AREA IC - Collector Current - A 100 IC(pulse) PW 10 1 10 IC(DC) Po m s we 10 rD 0m iss s ipa tio n 1 0. s s m = 1 m Lim ite d S/ b TC = 25 °C Single Pulse 0.1 0.1 Li m ite d 1 10 100 VCE - Collector to Emitter Voltage - V 3 2SD2583 Collector to Emitter Voltage vs Collector Current 4.0 IC - Collector Current - A 16 mA 3.0 12 mA 2.0 8mA 1.0 IB = 4 mA 0 1 2 3 4 5 6 VCE - Collector to Emitter Voltage - V DC Current Gain vs Collector Current 1000 hFE - DC Current Gain VC E = 2 V 100 10 1 1m 10 m 100 m IC - Collector Current - A 4 1.0 10 2SD2583 COLLECTOR SATURATION VOLTAGE vs COLLECTOR CURRENT 10 VCE(sat) - Collector Saturation Voltage - V IC/IB = 20 1 0.1 0.01 0.01 0.1 1 10 IC - Collector Current - A BASE SATURATION VOLTAGE vs COLLECTOR CURRENT 10 VBE(sat) - Base Saturation Voltage - V IC/IB = 20 1 0.1 0.01 0.01 0.1 1 10 IC - Collector Current - A 5 2SD2583 OUTPUT CAPACITANCE vs COLLECTOR TO BASE VOLTAGE Cob - Output Capacitance - pF 1000 100 10 1 0.1 1 10 VCB - Collector to Base Voltage - V 6 100 2SD2583 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Semiconductor device package manual C10943X Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 7 2SD2583 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 8