LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • ION IMPLANTATION 24 21 3.5 Ga 3 18 2.5 15 2 12 Associated Gain, GA (dB) • LG = 0.3 µm, WG = 280 µm 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz NE76000 9 1.5 6 1 NF DESCRIPTION The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology. The surface of the device, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch protection as well as surface stability. 0.5 3 0 0 1 10 20 Frequency, f (GHz) NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL SPECIFICATIONS (TA = 25°C) PART NUMBER PACKAGE OUTLINE NE76000 00 (CHIP) SYMBOLS PARAMETERS AND CONDITIONS UNITS NFOPT1 Optimum Noise Figure at VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz dB dB Associated Gain at VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz dB dB GA 1 P1dB Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz dBm IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 mA MIN TYP MAX 0.6 1.6 8.0 15 50 -0.5 -3.0 V -3.0 -0.8 mS 30.0 40.0 µA °C/W 8.0 50 Transconductance, VDS = 3 V, IDS = 10 mA Thermal Resistance (Channel to Case) 1.8 30 Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA Gate to Source Leakage Current, VGS = -4 V 1.8 TYP MAX 14.5 VP IGSO MIN 13.0 9.0 gm RTH (CH-C)2 NE76000L 00 (CHIP) 1.0 80 -0.8 -0.5 30.0 10.0 190 1.0 190 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. California Eastern Laboratories NE76000 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 5 TYPICAL NOISE PARAMETERS1 (VDS = 3.0, IDS = 10 mA) ΓOPT FREQ. NFOPT GA (GHz) (dB) (dB) MAG ANG Rn/50 1 0.50 23.88 .84 12 .69 VGD Gate to Drain Voltage V -5 VGS Gate to Source Voltage V -3 2 0.55 21.78 .76 25 .63 IDS Drain Current mA IDSS 4 0.60 18.93 .70 45 .49 PIN RF Input (CW) dBm +15 6 0.80 16.28 .64 65 .41 8 1.00 14.67 .60 83 .36 TCH Channel Temperature °C 175 10 1.30 12.97 .56 99 .32 TSTG Storage Temperature °C -65 to +175 12 1.60 11.58 .52 114 .27 PT2 Total Power Dissipation mW 240 14 1.90 10.24 .49 125 .23 16 2.30 9.42 .48 135 .20 18 2.60 8.39 .47 145 .18 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With chip mounted on a copper heat sink. Note: 1. Noise parameters include bond wires: Gate: 2 wires total, 1 per bond pad, 0.0139" long each wire. Drain: 2 wires total, 1 per bond pad, 0.0115" long each wire. Sources: 4 wires total, 2 per side, 0.0066" long each wire. Wire: 0.0007" diameter, gold. TYPICAL PERFORMANCE CURVES (TA = 25 °C) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT POWER DERATING CURVE 2.5 Infinite Heat sink 200 150 100 2 NF 5 1.5 50 0 0 0 25 50 75 100 125 150 175 0 200 5 10 15 20 25 Drain Current, IDS (mA) Ambient Temperature, TA (°C) DRAIN CURRENT vs. GATE VOLTAGE (TYP) VDS = 3 V, VP = -0.8 V DC PERFORMANCE 35 35 30 30 Drain Current, IDS (mA) Drain Current, IDS (mA) 10 GA 25 20 15 10 VGS = 0 V 25 20 VGS = -. 2 V 15 10 VGS = -.4 V 5 5 VGS = -.6 V 0 0 0 -3 -2.5 -2 -1.5 -1 -0.5 0 Gate to Source Voltage, VGS (V) 0.5 1 1.5 2 2.5 3 0.5 Drain Voltage, VDS (V) 3.5 4 Associated Gain, GA (dB) 15 250 Noise Figure, NF (dB) Total Power Dissipation, PT (mW) 300 NE76000 TYPICAL COMMON SOURCE SCATTERING PARAMETERS +90˚ j50 j25 +60˚ +120˚ j100 j150 +30˚ +150˚ j10 j250 S11 26 GHz 0 10 25 50 100 150 250 S11 0.1 GHz 500 S22 0.1 GHz S22 26 GHz S12 26 GHz S12 0.1 GHz +180 ˚ – S21 0.1 GHz 1 S21 26 GHz .15 .20 .25 0˚ 2 -j250 -j10 -30˚ 3 -150˚ -j150 4 -j100 -j25 -j50 Coordinates in Ohms Frequency in GHz (VDS = 3 V, ID = 10 mA) S21 5 -90˚ -120˚ -60˚ NE760001 VDS = 3 V, ID = 10 mA FREQUENCY S11 S21 (GHz) MAG ANG 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 0.999 0.999 0.998 0.996 0.993 0.985 0.969 0.947 0.923 0.890 0.874 0.855 0.825 0.808 0.766 0.741 0.723 0.700 0.677 0.665 0.638 0.616 -2.0 -3.0 -7.0 -13.0 -20.0 -27.0 -39.0 -50.0 -61.0 -70.0 -78.0 -87.0 -96.0 -104.0 -120.0 -135.0 -147.0 -155.0 -162.0 -171.0 178.0 164.0 S12 S22 MAG ANG MAG ANG MAG 3.291 3.282 3.280 3.265 3.218 3.185 3.079 2.950 2.814 2.669 2.545 2.446 2.328 2.237 2.077 1.926 1.800 1.653 1.528 1.464 1.390 1.286 179.0 178.0 175.0 169.0 164.0 158.0 148.0 138.0 129.0 120.0 113.0 104.0 97.0 90.0 76.0 63.0 53.0 43.0 35.0 26.0 16.0 7.0 0.002 0.004 0.010 0.020 0.030 0.039 0.057 0.072 0.085 0.094 0.104 0.110 0.114 0.119 0.132 0.134 0.134 0.130 0.121 0.115 0.121 0.123 90.0 89.0 85.0 81.0 78.0 74.0 66.0 59.0 51.0 47.0 41.0 36.0 30.0 29.0 19.0 12.0 6.0 3.0 4.0 4.0 5.0 4.0 0.677 0.677 0.675 0.673 0.671 0.666 0.655 0.640 0.621 0.602 0.590 0.579 0.565 0.565 0.558 0.549 0.553 0.530 0.519 0.520 0.537 0.538 K ANG -1.0 -2.0 -4.0 -8.0 -12.0 -16.0 -23.0 -30.0 -36.0 -42.0 -47.0 -53.0 -58.0 -63.0 -73.0 -81.0 -88.0 -94.0 -99.0 -107.0 -116.0 -123.0 0.06 0.02 0.04 0.05 0.04 0.07 0.12 0.17 0.24 0.30 0.34 0.38 0.45 0.45 0.52 0.59 0.64 0.80 0.98 1.08 1.08 1.18 S21 MAG2 (dB) (dB) 10.3 10.3 10.3 10.2 10.1 10.0 9.7 9.3 8.9 8.5 8.1 7.7 7.3 6.9 6.3 5.6 5.1 4.3 3.6 3.3 2.8 2.1 32.1 29.1 25.1 22.1 20.3 19.1 17.3 16.1 15.1 14.5 13.8 13.4 13.1 12.7 11.9 11.5 11.2 11.0 11.0 9.3 8.8 7.5 Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 1 per bond pad, 0.0139" (354 µm) long each wire. Drain: Total 2 wire(s), 1 per bond pad, 0.0115" (291 µm) long each wire. Source: Total 4 wire (s), 2 per side, 0.0066" (168 µm) long each wire. Wire: 0.0007" (17.8 µm) Diameter, Gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE76000 NE76000 LINEAR MODEL SCHEMATIC LG 0.155 RG CDG RD 2.5 0.035 2 GATE GGS 1E-6 0.05 DRAIN CGS 0.25 RI 2 CDC 0.035 g= 46ms f= 200GHz t= 2psec RDS 220 CDS 0.085 RS 3 LS 0.02 SOURCE UNITS MODEL RANGE Parameter capacitance inductance resistance conductance LD Units picofarads nanohenries ohms millisiemans Frequency: Bias: Date: 0.05 to 26 GHz VDS = 3 V, ID = 10 mA 7/19/96 NE76000 NE76000 NONLINEAR MODEL Q1 SCHEMATIC RD LG LD 0.06 76000 DRAIN 2 RG R_COMP 480 GATE 0.14 1.5 CRF_X 100 RS 4.6 LS 0.02 SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.73 RG 0 capacitance picofarads VTOSC 0 RD 0 inductance nanohenries resistance ohms ALPHA 4 RS 0 BETA 0.063 RGMET 0 GAMMA 0 KF 0 GAMMADC(2) 0.06 AF 1 Q 2.2 TNOM 27 DELTA 0.7 XTI 3 VBI 0.626 EG 1.43 IS 1.98e-11 VTOTC 0 N 1.4 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 3.2e-12 CDS 0.11e-12 RDB Infinity CBS 0 CGSO(3) 0.4e-12 CGDO(4) 0.04e-12 1 0.3 DELTA2 0.2 FC 0.5 VBR Infinity DELTA (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD Units MODEL RANGE Frequency: 0.05 to 26 GHz Bias: VDS = 3 V, ID = 10 mA Date: 8/30/96 NE76000 OUTLINE DIMENSIONS (Units in µm) NE76000 (CHIP) (Units in µm) 450±45 130 DRAIN 62 DRAIN 330±33 25 33 55 S O U R C E 119 46 52 GATE GATE 49 48 42 S O U R C E 30 Bonding Pad Area Chip Thickness: 140 µm±20 µm Note: All dimensions are typical unless otherwise stated. ORDERING INFORMATION PART NUMBER IDSS SELECTION (mA) NE76000L 50 to 80 NE76000 15 to 50 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE