NE72218 D C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS (Units in mm) • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm • 4 PIN SUPER MINI MOLD: (SOT-343) • TAPE & REEL PACKAGING 2.1 ± 0.2 1.25 ± 0.1 2.0 ± 0.2 0.65 2 1.25 0.60 V57 • UE PACKAGE OUTLINE 18 1 3 0.65 1.3 0.65 4 IN DESCRIPTION +0.10 0.3 -0.05 +0.10 0.4 -0.05 0.3 0.9 ± 0.1 NT The NE72218 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance, reliability and uniformity. The NE72218 is housed in a 4 pin super mini mold package, making it ideal for high density design. NEC's stringent quality assurance and test procedures ensure the highest reliability performance. PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain 0 to 0.1 +0.10 0.15 -0.05 SC O ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS Gs Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz P1dB Output Power at 1 dB Gain Compression Point at VDS = 3 V, ID = 30 mA, f = 12 GHz PN IDSS IGSO MIN TYP dB 5.0 dBm 15.0 MAX -110 dBc/Hz -90 Transconductance at VDS = 3 V, ID = 30 mA mS Saturated Drain Current at VDS = 3 V, VGS = 0 V mA 30 60 120 V -0.5 -2.0 -4.0 1.0 10 Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA DI VGS (OFF) UNITS Phase Noise at VDS = 3 V, ID = 30 mA, f = 11 GHz, 100 KHz offset dBc/Hz Phase Noise at VDS = 3 V, ID = 30 mA, f = 11 GHz, 10 KHz offset gm NE72218 18 Gate to Source Leakage Current at VGS = -5 V µA 20 45 California Eastern Laboratories NE72218 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS ORDERING INFORMATION V 5.0 PACKAGE STYLE VGS Gate to Source Voltage V -5.0 NE72218 Bulk VGD Gate to Drain Voltage V -5.0 IDSS mA 8-mm wide embossed tape, pin 3 (Source), pin 4 (Drain) face perforated side of tape. NE72218-T1 3 Kpcs/Reel Drain Current TCH Channel Temperature °C 125 TSTG Storage Temperature °C -65 to +125 mW 250 PT Total Power Dissipation Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 8-mm wide embossed tape, pin 1 (Source), pin 2 (Gate) face perforated side of tape. UE ID D Drain to Source Voltage PART NUMBER QUANTITY VDS IDSS CLASSIFICATION TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE MARKING 30 to 120 V57 58 65 to 120 V58 59 30 to 75 V59 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 300 80 NT Drain Current, ID (mA) 100 200 100 VGS = 0 V 60 40 VGS = -0.5 V 20 SC O Total Power Dissipation, PT (mW) IDSS (mA) 57 IN TYPICAL PERFORMANCE CURVES (TA = 25°C) RANK 0 50 VGS = -1.0 V 0 2 1 3 4 150 100 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) BASE BAND 1/f NOISE vs. OFFSET FREQUENCY DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE -80 VDS = 3 V, IDS = 30 mA 40 DI Drain Current, ID (mA) 60 20 -2.0 Gate to Source Voltage, VGS (V) -90 -100 -110 -120 -130 -140 -150 -160 0 -4.0 Base Band 1/f Noise, dBv/Hz VDS = 3 V 80 5 0 0.1 1 10 Offset Frequency, kHz 100 NE72218 NE72218 NONLINEAR MODEL SCHEMATIC 0.003pF LD Q1 LG_PKG LD_PKG DRAIN 0.82nH 0.1nH 0.55nH 0.48nH UE LG GATE D CGD_PKG CDS_PKG CGS_PKG 0.12pF LS 0.22nH 0.15pF CDX 0.02pF LS_PKG 0.05nH IN CGX 0.15pF SOURCE Parameters Q1 Parameters VTO -1.34 RG VTOSC 0 RD ALPHA 2.5 RS BETA 0.04 Q1 Parameter 10 time 4 capacitance farads inductance henries RGMET 0 resistance ohms 2e-10 voltage volts 1.5 current amps 0.07 KF 0.03 AF SC O GAMMA Q 2 TNOM 27 DELTA 0.3 XTI 3 VBI 1 EG 1.43 IS 1e-14 VTOTC 0 N 1.3 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 4e-12 0.27e-12 RDB 5000 1e-10 0.85e-12 DI CBS CGSO CGDO 0.055e-12 DELTA1 0.3 DELTA2 0.3 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model Units seconds 4 GAMMADC CDS UNITS NT FET NONLINEAR MODEL PARAMETERS (1) MODEL RANGE Frequency: 0.5 to 18 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 40 mA IDSS = 55 mA @ VGS = 0, VDS = 3 V Power: VDS = 3 V, ID = 30 mA, 4 GHz Date: 4/98 NE72218 NE72218 (RANK 58) NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD LG_PKG LD_PKG DRAIN 0.82nH 0.1nH LG GATE 0.55nH 0.48nH CDS_PKG LS 0.22nH 0.15pF CDX 0.02pF UE CGS_PKG 0.12pF D Q1 LS_PKG 0.05nH CGX 0.15pF SOURCE Parameters Q1 Parameters Q1 VTO -1.8065 RG 10 VTOSC 0 RD 4 2.5 RS 4 BETA 0.0396 RGMET 0 GAMMA 0.072 KF DELTA 0.3 XTI VBI 1 EG IS 1e-14 VTOTC N 1.3 BETATCE 0 RIS 0 FFE 1 27 3 1.43 0 SC O RDB 5000 CBS 1e-10 0.85e-12 0.055e-12 DELTA1 0.3 DELTA2 0.3 FC 0.5 VBR Infinity DI CGSO CGDO (1) Series IV Libra TOM Model ohms 1.5 AF 0.27e-12 henries resistance volts TNOM CDS inductance amps 1.8 0 farads current 0.03 4e-12 capacitance voltage Q RID Units seconds 2e-10 GAMMADC TAU Parameter time NT ALPHA UNITS IN FET NONLINEAR MODEL PARAMETERS (1) MODEL RANGE Frequency: 0.5 to 18 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 40 mA IDSS = 82 mA @ VGS = 0, VDS = 3 V Date: 4/98 NE72218 NE72218 (RANK 59) NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD LG_PKG LD_PKG DRAIN 0.82nH 0.1nH LG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF LS 0.22nH CDX 0.02pF UE 0.15pF D Q1 LS_PKG 0.05nH CGX 0.15pF SOURCE Parameters Q1 Parameters Q1 VTO -1.34 RG 10 VTOSC 0 RD 4 2.5 RS 4 BETA 0.04 RGMET 0 GAMMA 0.07 KF Parameter Units time seconds capacitance farads inductance henries resistance ohms NT ALPHA UNITS IN FET NONLINEAR MODEL PARAMETERS (1) 2e-10 voltage volts 1.5 current amps GAMMADC 0.03 AF Q 2 TNOM DELTA 0.3 XTI VBI 1 EG IS 1e-14 VTOTC N 1.3 BETATCE 0 RIS 0 FFE 1 27 3 1.43 SC O 0 MODEL RANGE Frequency: 0.5 to 18 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 40 mA IDSS = 55 mA @ VGS = 0, VDS = 3 V Power: VDS = 3 V, ID = 30 mA, 4 GHz Date: 4/98 RID 0 TAU 4e-12 CDS 0.27e-12 RDB 5000 CBS 1e-10 0.85e-12 0.055e-12 DELTA1 0.3 DELTA2 0.3 FC 0.5 VBR Infinity DI CGSO CGDO (1) Series IV Libra TOM Model EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 1/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE