PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz • SiGe HBT TECHNOLOGY: USH3 process, fmax = 110 GHz • M14 PACKAGE: 4-pin lead-less minimold package ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NESG3031M14 50 pcs (Non reel) • 8 mm wide embossed taping NESG3031M14-T3 10 kpcs/reel • Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 12.0 V Collector to Emitter Voltage VCEO 4.3 V Emitter to Base Voltage VEBO 1.5 V IC 35 mA Ptot Note 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Collector Current Total Power Dissipation Note Mounted on 1.08 cm2 × 1.0 mm, (t) glass epoxy PCB California Eastern Laboratories NESG3031M14 ELECTRICAL CHARACHTERISTICS (TA = 25°C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT − − 100 nA DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain ICBO VCB = 5 V, IE = 0 mA IEBO VEB = 1 V, IC = 0 mA − − 100 nA hFE Note 1 VCE = 2 V, IC = 6 mA 220 300 380 − |S21e|2 VCE = 3 V, IC = 20 mA, f = 5.8 GHz 6.5 9.0 − dB NF VCE = 2 V, IC = 6 mA, f = 5.2 GHz, − 0.95 − dB RF Characteristics Insertion Power Gain Noise Figure (1) ZS = ZSopt, ZL = ZLopt Noise Figure (2) NF VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 1.1 1.5 dB Associated Gain (1) Ga VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt − 10.0 − dB Associated Gain (2) Ga VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 7.5 9.5 − dB Reverse Transfer Capacitance Cre Note 2 Maximum Stable Power Gain MSGNote 3 Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 20 mA, f = 5.8 GHz hFE CLASSIFICATION RANK FB Marking zJ hFE Value 220 to 380 0.25 pF 15.0 − dB VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 13.0 − dBm OIP3 VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 18.0 − dBm 2. Collector to base capacitance when the emitter grounded S21 S12 0.15 PO (1 dB) Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 3. MSG = − 12.0 NESG3031M14 PACKAGE DIMENSIONS (Units in mm) 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) 1.0±0.05 0.15±0.05 2 0.5±0.05 0.11+0.1 -0.05 1 zJ 4 0.8 1.2+0.07 -0.05 3 0.8+0.07 -0.05 PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base Emitter Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 04/26/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd.