DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz • SiGe HBT TECHNOLOGY (UHS3) ADOPTED: fmax = 110 GHz M14 Package • M14 PACKAGE: 4-pin lead-less minimold package ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NESG3031M14-A 50 pcs (Non reel) • 8 mm wide embossed taping NESG3031M14-T3-A 10 kpcs/reel • Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25ºC) SYMBOL RATINGS UNIT Collector to Base Voltage PARAMETER VCBO 12.0 V Collector to Emitter Voltage VCEO 4.3 V Emitter to Base Voltage VEBO 1.5 V IC 35 mA Ptot Note 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Collector Current Total Power Dissipation Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. California Eastern Laboratories 1 NESG3031M14 ELECTRICAL CHARACTERISTICS (TA = +25ºC) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT − − 100 nA DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA IEBO VEB = 1 V, IC = 0 mA − − 100 nA hFE Note 1 VCE = 2 V, IC = 6 mA 220 300 380 − | S21e |2 VCE = 3 V, IC = 20 mA, f = 5.8 GHz 6.5 9.0 − dB Noise Figure (1) NF VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt − 0.95 − dB Noise Figure (2) NF VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 1.1 1.5 dB Associated Gain (1) Ga VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt − 10.0 − dB Associated Gain (2) Ga VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 7.5 9.5 − dB − 0.15 0.25 pF 12.0 15.0 − dB Emitter Cut-off Current DC Current Gain RF Characteristics Insertion Power Gain Reverse Transfer Capacitance Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz Maximum Stable Power Gain MSGNote 3 VCE = 3 V, IC = 20 mA, f = 5.8 GHz Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point PO (1 dB) VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 13.0 − dBm OIP3 VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 18.0 − dBm Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION RANK FB Marking zJ hFE Value 220 to 380 2 NESG3031M14 TYPICAL CHARACTERISTICS (TA = 25ºC, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on glass epoxy PWB (1.08 cm2 × 1.0 mm (t)) 200 150 100 50 25 0 100 50 75 100 125 150 0.2 0.1 2 4 6 8 10 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 1 0.1 0.01 0.001 0.0001 VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.00001 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.4 1.0 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 VCE = 3 V 10 1 0.1 0.01 0.001 0.0001 0.00001 0.4 0.5 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Collector Current IC (mA) f = 1 MHz Ambient Temperature TA (ºC) 10 100 0.3 0 Collector Current IC (mA) Collector Current IC (mA) Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 200 µ A 180 µ A 160 µ A 140 µ A 120 µ A 30 100 µ A 20 80 µ A 60 µ A 10 40 µ A IB = 20 µ A 0.5 0.6 0.7 0.8 0.9 0 1.0 Base to Emitter Voltage VBE (V) 1 2 3 4 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 3 5 NESG3031M14 DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain hFE 100 10 0.1 1 10 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 VCE = 3 V 1 10 25 20 15 10 5 10 Collector Current IC (mA) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 VCE = 2 V f = 2 GHz 15 10 5 10 25 Collector Current IC (mA) VCE = 3 V f = 2 GHz 15 10 5 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 100 20 0 1 100 100 VCE = 1 V f = 2 GHz 0 1 100 Gain Bandwidth Product fT (GHz) DC Current Gain hFE 10 DC CURRENT GAIN vs. COLLECTOR CURRENT 20 0 1 1 Collector Current IC (mA) 10 0.1 25 100 10 0.1 100 100 30 VCE = 2 V Collector Current IC (mA) 1,000 Gain Bandwidth Product fT (GHz) 1,000 VCE = 1 V Gain Bandwidth Product fT (GHz) DC Current Gain hFE 1,000 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 NESG3031M14 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 1 V IC = 20 mA 25 MSG MAG 20 15 10 |S21e|2 5 1 100 10 VCE = 3 V IC = 20 mA MAG 15 MAG MSG |S21e|2 5 1 MAG 20 MAG 15 MSG 10 |S21e|2 5 0 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 0 25 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG 10 VCE = 2 V IC = 20 mA MSG Frequency f (GHz) 30 25 30 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 0 10 100 30 VCE = 1 V f = 2.4 GHz 25 MSG 20 15 MAG |S21e|2 10 5 0 1 10 100 Frequency f (GHz) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 2 V f = 2.4 GHz 25 MSG 20 MAG |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) 30 VCE = 3 V f = 2.4 GHz 25 MSG 20 |S21e|2 15 10 5 0 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 5 MAG 100 NESG3031M14 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 VCE = 1 V f = 5.2 GHz 20 MSG MAG 15 10 2 |S21e| 5 0 -5 1 10 100 25 VCE = 2 V f = 5.2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 -5 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) VCE = 3 V f = 5.2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 -5 1 10 100 25 VCE = 1 V f = 5.8 GHz 20 MSG 15 MAG 10 |S21e|2 5 0 -5 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 2 V f = 5.8 GHz 20 MSG 15 10 MAG |S21e|2 5 0 -5 1 10 100 Collector Current IC (mA) 25 VCE = 3 V f = 5.8 GHz 20 MSG MAG 15 10 |S21e|2 5 0 -5 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 100 NESG3031M14 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 15 50 20 40 15 Pout 10 30 5 20 IC 10 0 -5 -20 -15 -10 -5 0 5 Output Power Pout (dBm) VCE = 3 V, f = 2.4 GHz IC (set) = 20 mA Collector Current IC (mA) Output Power Pout (dBm) 20 30 IC 5 20 10 0 -10 -5 0 5 0 10 Input Power Pin (dBm) Input Power Pin (dBm) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 40 Pout 10 -5 -15 0 50 VCE = 3 V, f = 5.8 GHz IC (set) = 20 mA Collector Current IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 5 4 16 4 3 12 2 8 15 0 1 VCE = 2 V f = 2.4 GHz 10 4 0 100 12 3 9 2 6 1 0 Collector Current IC (mA) Ga NF 1 VCE = 2 V f = 5.8 GHz 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 7 3 0 100 Associated Gain Ga (dB) NF Noise Figure NF (dB) 1 Associated Gain Ga (dB) Noise Figure NF (dB) Ga NESG3031M14 PACKAGE DIMENSIONS (UNIT : mm) 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) 1.0±0.05 0.15±0.05 2 0.5±0.05 0.11+0.1 -0.05 1 zJ 4 0.8 1.2+0.07 -0.05 3 0.8+0.07 -0.05 PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base Emitter Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 01/31/2005 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 8 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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