DATA SHEET PHOTOCOUPLER PS2707-1,PS2707-2,PS2707-4 AC INPUT RESPONSE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER SERIES TM Series− DESCRIPTION The PS2707-1, PS2707-2, PS2707-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor. Each is mounted in a plastic SOP (Small Outline Package) for high density applications. This package has shield effect to cut off ambient light. FEATURES • AC input response • High collector to emitter voltage (VCEO = 120 V) • High isolation voltage (BV = 3 750 Vr.m.s.) • Small and thin (SOP) package • High-speed switching (tr, tf = 10 µs TYP.) • Ordering number of taping product (1-ch only): PS2707-1-E3, E4, F3, F4 • UL approved: File No. E72422 (S) • VDE0884 approved (Option) APPLICATIONS • Hybrid IC • Telephone/FAX • FA/OA equipment • Programmable logic controllers ORDERING INFORMATION Part Number Package Safety Standard Approval PS2707-1 4-pin SOP Standard specification products PS2707-2 8-pin SOP • UL approved PS2707-4 16-pin SOP PS2707-1-V 4-pin SOP PS2707-2-V 8-pin SOP PS2707-4-V 16-pin SOP VDE0884 specification products (Option) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P11311EJ5V0DS00 (5th edition) Date Published February 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 1988, 1999 PS2707-1,PS2707-2,PS2707-4 PACKAGE DIMENSIONS (in millimeters) PS2707-1 4.5 MAX. TOP VIEW 4 1 3 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 2 1.3 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. 7.0±0.3 4.4 2.54 0.4 +0.10 –0.05 1.2 MAX. 0.5±0.3 0.25 M PS2707-2 9.3 MAX. TOP VIEW 8 7 6 5 1. 3. 2. 4. 5. 7. 6. 8. 1 2 3 4 7.0±0.3 4.4 1.3 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. Anode, Cathode Cathode, Anode Emitter Collector 2.54 0.4 +0.10 –0.05 1.2 MAX. 0.5±0.3 0.25 M PS2707-4 19.46 MAX. TOP VIEW 16 1 15 14 13 2 3 4 1. 3. 5. 7. 2. 4. 6. 8. 9. 11. 13. 15. 10. 12. 14. 16. 12 11 10 9 5 6 7 8 Anode, Cathode Cathode, Anode Emitter Collector 2 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. 7.0±0.3 4.4 0.4 +0.10 –0.05 0.25 M 2.54 1.2 MAX. Data Sheet P11311EJ5V0DS00 0.5±0.3 1.3 PS2707-1,PS2707-2,PS2707-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Diode Symbol PS2707-2, PS2707-4 Unit IF ± 50 mA ∆PD/°C 0.8 mW/°C PD 80 mW/ch IFP ±1 A Collector to Emitter Voltage VCEO 120 V Emitter to Collector Voltage VECO 6 V IC 30 mA/ch Forward Current (DC) Power Dissipation Derating Power Dissipation Peak Forward Current Transistor PS2707-1 *1 Collector Current Power Dissipation Derating Power Dissipation *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Isolation Voltage BV 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P11311EJ5V0DS00 3 PS2707-1,PS2707-2,PS2707-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions MIN. TYP. MAX. Unit 1.4 V Forward Voltage VF IF = ± 5 mA 1.1 Terminal Capacitance Ct V = 0 V, f = 1 MHz 60 Transistor Collector to Emitter Current ICEO IF = 0 mA, VCE = 120 V Coupled Current Transfer Ratio CTR IF = ± 5 mA, VCE = 5 V 50 150 IF = ± 1 mA, VCE = 5 V 10 80 0.3 1.0 (IC/IF) 100 nA 400 % CTR Ratio CTR1/ CTR2 IF = ± 5 mA, VCE = 5 V Collector Saturation Voltage VCE (sat) IF = ± 10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF *2 Rise Time tr VCC = 5 V, IC = 2 mA, RL = 1 kΩ 10 µs *2 tf *1 Fall Time IC1 IF1 VCE IC2 IF2 *2 Test circuit for switching time Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 Input monitor 50 Ω VOUT RL = 1 kΩ Data Sheet P11311EJ5V0DS00 3.0 0.3 V Ω 11 10 10 *1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 4 pF PS2707-1,PS2707-2,PS2707-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 75 50 25 25 0 50 75 200 150 PS2707-1 1.5 mW/˚C 100 PS2707-2, PS2707-4 1.2 mW/˚C 50 100 0 25 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 100 80 10 1 Forward Current IF (mA) Forward Current IF (mA) 60 TA = +100 ˚C +75 ˚C +50 ˚C +25 ˚C 0 ˚C –25 ˚C –55 ˚C 0.1 40 20 0 –20 –40 –60 0.8 1.0 1.2 1.4 –80 –1.6 –1.2 –0.8 –0.4 1.6 0 0.4 0.8 1.2 1.6 Forward Voltage VF (V) Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50 000 10 10 000 5 000 5 1 000 500 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.01 0.6 VCE = 40 V 24 V 10 V 100 50 10 5 1 0.5 0.1 –60 –40 –20 0 20 40 60 80 100 IF = 25 mA 10 mA 5 mA 2.5 mA 2 mA 1.5 mA 1 mA 1 0.5 0.5 mA 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE (sat) (V) Ambient Temperature TA (˚C) Data Sheet P11311EJ5V0DS00 5 PS2707-1,PS2707-2,PS2707-4 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 10 mA 5 mA 8 4 mA IF = Collector Current IC (mA) 10 6 3 mA 4 2 mA 2 1 mA 0.5 mA 2 0 4 6 8 Normalized Current Transfer Ratio CTR COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 1.0 0.8 0.6 0.4 0.0 –50 –25 0 Ambient Temperature TA (˚C) CURRENT TRANSFER RATIO vs. FORWARD CURRENT SWITCHING TIME vs. LOAD RESISTANCE 100 VCC = 5V, IC = 2 mA VCE = 5 V Switching Time t ( µ s) 250 200 150 100 tf tr 10 td ts 1 50 0 0.1 0.5 1 5 10 0.1 10 50 100 Forward Current IF (mA) 1k 10 k Load Resistance RL (Ω) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 1.2 1 000 IF = 5 mA, VCC = 5 V, CTR = 90 % 1.0 tf 100 Normalized Gain GV Switching Time t ( µ s) Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 25 50 75 100 0.2 Collector to Emitter Voltage VCE (V) 300 Current Transfer Ratio CTR (%) ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, 1.2 ts 10 tr 1 td RL = 1 kΩ 510 Ω 300 Ω 100 Ω 0.8 0.6 0.4 0.2 0.1 1 10 100 0.0 0.5 Load Resistance RL (kΩ) 6 1 5 10 50 100 Frequency f (kHz) Data Sheet P11311EJ5V0DS00 500 PS2707-1,PS2707-2,PS2707-4 LONG TERM CTR DEGRADATION 1.2 CTR (Relative Value) 1.0 0.8 IF = 1 mA, TA = 25 ˚C IF = 5 mA, TA = 25 ˚C IF = 20 mA, TA = 25 ˚C IF = 20 mA, TA = 60 ˚C 0.6 0.4 0.2 0.0 1 102 103 104 105 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet P11311EJ5V0DS00 7 PS2707-1,PS2707-2,PS2707-4 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 2.4±0.1 7.4±0.1 5.5±0.1 1.55±0.1 12.0±0.2 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 4.6±0.1 8.0±0.1 Tape Direction PS2707-1-E4 PS2707-1-F4 PS2707-1-E3 PS2707-1-F3 Outline and Dimensions (Reel) 6 6.0±1 Packing: PS2707-1-E3, E4 900 pcs/reel PS2707-1-F3, F4 3 500 pcs/reel 8 Data Sheet P11311EJ5V0DS00 φ 13.0±0.5 1.5±0.5 φ 66 2.0±0.5 0˚ 1.5±0.1 120 ˚ PS2707-1-E3, E4: φ 178 PS2707-1-F3, F4: φ 330 φ 21.0±0.8 1.5±0.1 12.4 +2.0 –0.0 18.4 MAX. PS2707-1,PS2707-2,PS2707-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. Data Sheet P11311EJ5V0DS00 9 PS2707-1,PS2707-2,PS2707-4 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Speck Unit IV III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC UIORM Upr 710 850 Vpeak Vpeak Test voltage (partial discharge test, procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak Highest permissible overvoltage UTR 6 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg −55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. Ris MIN. 10 11 10 Ω Ω Tsi Isi Psi 150 200 300 mA mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 10 Data Sheet P11311EJ5V0DS00 12 9 °C Ω PS2707-1,PS2707-2,PS2707-4 [MEMO] Data Sheet P11311EJ5V0DS00 11 PS2707-1,PS2707-2,PS2707-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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