PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS (Units in mm) LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 (Top View) 2.1 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • UPA835TF 1.25 ± 0.1 HIGH GAIN: Q1: |S21E|2 = 8.5 dB TYP at f = 1 GHz, VCE = 3 V, lc = 10 mA Q2: = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE • 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE685, Q2: NE856) 6 2 5 3 4 +0.10 1.3 |S21E|2 • 1 0.65 2.0 ± 0.2 0.6 ± 0.1 0.45 0.22 - 0.05 (All Leads) 0.13 ± 0.05 0 ~ 0.1 DESCRIPTION The UPA835TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE Q1 SYMBOLS UNITS ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 10 mA fT TYP 0.1 75 150 12 pF 0.4 Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz dB NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA fT Cre |S21E|2 NF Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance2 7 at VCB = 3 V, IE = 0, f = 1 MHz pF Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 0.7 8.5 1.5 2.5 1.0 1.0 100 GHz MAX 0.1 GHz |S21E|2 Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz MIN Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Cre Q2 PARAMETERS AND CONDITIONS UPA835TF TS06 3.0 145 4.5 0.7 7 1.5 9 1.2 2.5 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA835TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 VCBO Collector to Base Voltage V 9 20 VCEO Collector to Emitter Voltage V 6 12 VEBO Emitter to Base Voltage V 2 3 100 IC Collector Current mA 30 PT Total Power Dissipation mW 150 150 2002 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW. Q1 Q2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Total Power Dissipation, PT (mW) TYPICAL PERFORMANCE CURVES (TA = 25˚C) Free Air 2 elements in total 200 Q1 when using 1 element Q1 when using 2 elements 100 0 50 100 150 200 Q2 when using 1 element Q2 when using 2 elements 100 0 100 Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 150 20 VCE = 3 V VCE = 3 V 40 Collector Current, lc (mA) Collector Current, lc (mA) 8 Ambient Temperature, TA (°C) 50 30 20 10 0 Free Air 2 elements in total 0.5 Base to Emitter Voltage, VBE (V) 1.0 10 0 0.5 Base to Emitter Voltage, VBE (V) 1.0 UPA835TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 Q2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 25 lB=160 µA 500 µA 140 µA Collector Current, lc (mA) Collector Current, lc (mA) 50 400 µA 40 300 µA 30 200 µA 20 lB=100 µA 20 120 µA 100 µA 15 80 µA 10 60 µA 40 µA 5 20 µA 10 0 1 2 3 4 5 0 6 5 10 Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 200 200 DC Current Gain, hFE DC Current Gain, hFE VCE = 3 V 5V VCE = 3 V 100 0 0.1 0.2 1 2 5 10 20 50 20 10 50 100 0.5 1 5 10 50 Collector Current, lc (mA) Collector Current, lc (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 14 f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 0.5 100 5V 12 3V 10 8 VCE = 1 V 6 4 VCE = 3 V f = 1.0 GHz 10 5 2 1 2 0.5 1 2 5 10 20 Collector Current, lc (mA) 50 0.5 1 5 10 Collector Current, lc (mA) 50 UPA835TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 Q2 INSERTION POWER GAIN vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 15 f = 2 GHz Insertion Power Gain, |S21E|2 (dB) Insertion Power Gain, |S21E|2 (dB) 10 5V 8 3V VCE = 1 V 6 4 VCE = 3 V f = 1.0 GHz 10 5 0 2 0.5 2 5 10 20 0.5 50 1 5 10 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT NOISE FIGURE vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz VCE = 3 V f = 1 GHz Noise Figure, NF (dB) Noise Figure, NF (dB) 100 6 4 3 2 1 4 2 0 0 0.5 1 2 5 10 20 0.5 50 1.0 5.0 10 50 Collector Current, lc (mA) Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.6 5.0 Feedback Capacitance, Cre (pF) 0.5 0.4 0.3 0.2 100 f = 1 MHz f = 1 MHz Feedback Capacitance, Cre (pF) 50 2.0 1.0 0.5 0.2 0.1 0.5 1 2 5 10 Collector to Base Voltage, VCB (V) 20 1 2 5 10 20 Collector to Base Voltage, VCB (V) 50 UPA835TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q2 INSERTION POWER GAIN vs. FREQUENCY Insertion Power Gain, |S21E|2 (dB) 24 VCE = 3 V lc = 7 mA 20 16 12 8 4 0 0.1 0.2 0.5 1.0 2.0 5.0 Frequency, f (GHz) TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S21 S11 MAG 0.98 0.97 0.95 0.93 0.90 0.87 0.84 0.80 0.76 0.73 0.64 0.51 0.43 0.35 0.31 0.35 ANG -5.93 -11.90 -18.17 -24.00 -30.10 -36.17 -42.49 -48.69 -55.28 -61.26 -74.79 -96.77 -112.09 -138.38 175.03 140.64 MAG 2.38 2.36 2.39 2.35 2.35 2.33 2.30 2.29 2.29 2.24 2.19 2.10 2.00 1.84 1.62 1.41 S12 ANG 172.32 165.08 158.35 151.83 145.70 140.22 134.45 129.32 123.53 118.31 108.30 93.80 84.74 72.75 54.64 40.02 MAG 0.02 0.04 0.06 0.07 0.09 0.10 0.12 0.13 0.14 0.15 0.16 0.18 0.19 0.19 0.20 0.21 ANG 162.21 147.42 134.45 123.37 113.14 104.15 96.02 88.78 82.34 76.48 66.07 52.95 45.23 35.40 21.71 11.96 MAG 0.04 0.08 0.11 0.13 0.14 0.15 0.16 0.15 0.15 0.15 0.14 0.13 0.13 0.14 0.21 0.30 S22 ANG 85.76 81.15 76.27 72.22 68.30 64.18 60.68 56.90 53.94 51.07 45.85 39.24 36.24 32.40 29.55 28.96 MAG 1.00 0.99 0.97 0.96 0.94 0.92 0.89 0.87 0.84 0.81 0.76 0.69 0.65 0.60 0.53 0.47 ANG 76.22 63.75 53.38 44.64 38.01 32.06 27.52 24.29 21.95 20.46 19.44 24.64 32.01 44.56 55.71 51.65 MAG 0.98 0.93 0.87 0.81 0.76 0.71 0.68 0.65 0.62 0.60 0.57 0.53 0.51 0.48 0.45 0.46 ANG -3.86 -7.44 -11.14 -14.73 -18.02 -21.42 -24.18 -27.47 -29.94 -32.50 -36.89 -42.90 -46.39 -51.51 -59.91 -69.74 Q2 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.97 0.93 0.89 0.84 0.80 0.76 0.74 0.71 0.69 0.68 0.67 0.67 0.68 0.69 0.72 0.75 S21 ANG -20.79 -40.50 -59.73 -76.87 -93.28 -107.72 -120.25 -131.32 -141.35 -150.05 -165.04 176.90 166.97 154.69 137.73 124.46 MAG 2.52 2.43 2.35 2.20 2.11 1.99 1.85 1.74 1.64 1.53 1.36 1.17 1.06 0.94 0.79 0.68 S12 S22 ANG -8.81 -16.39 -22.34 -27.24 -30.90 -34.29 -36.96 -39.46 -41.97 -44.52 -50.06 -59.83 -68.26 -82.95 -114.70 -152.23 UPA835TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.94 0.90 0.85 0.80 0.74 0.67 0.60 0.54 0.47 0.42 0.32 0.21 0.17 0.16 0.22 0.29 S21 ANG -9.29 -18.39 -27.47 -36.15 -44.62 -52.69 -60.71 -68.45 -75.60 -82.57 -96.78 -122.39 -143.90 179.12 136.13 115.80 MAG 6.55 6.32 6.21 5.98 5.77 5.51 5.28 5.03 4.76 4.50 4.02 3.42 3.10 2.70 2.24 1.89 S12 ANG 168.08 157.85 148.76 140.53 133.00 126.23 119.27 113.12 107.23 101.99 92.52 80.83 74.15 64.83 51.62 39.81 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.11 0.13 0.15 0.16 0.18 0.21 0.23 ANG 155.29 137.78 123.40 111.97 102.51 94.93 88.40 82.68 77.69 73.06 64.68 53.63 46.97 37.59 23.63 11.49 MAG 0.04 0.07 0.09 0.10 0.11 0.11 0.11 0.12 0.12 0.13 0.13 0.15 0.17 0.19 0.25 0.31 S22 ANG 84.10 76.93 71.79 66.81 63.60 60.13 58.07 55.93 54.62 53.45 51.59 49.61 48.63 46.70 43.76 40.27 MAG 0.98 0.95 0.91 0.86 0.81 0.76 0.72 0.68 0.64 0.61 0.56 0.50 0.46 0.42 0.36 0.31 ANG 71.05 56.98 48.29 42.87 39.94 38.27 37.56 37.77 38.47 39.41 41.56 45.41 47.04 48.39 47.57 42.77 MAG 0.93 0.81 0.68 0.59 0.52 0.47 0.43 0.40 0.38 0.36 0.32 0.28 0.25 0.22 0.19 0.23 ANG -6.91 -13.21 -18.80 -23.80 -27.41 -31.19 -33.67 -36.31 -38.10 -39.74 -42.63 -46.74 -49.50 -54.02 -63.34 -75.36 Q2 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.90 0.82 0.73 0.67 0.62 0.59 0.57 0.56 0.55 0.54 0.55 0.56 0.57 0.60 0.64 0.68 S21 ANG -29.30 -56.11 -80.85 -101.56 -118.49 -131.80 -142.87 -152.14 -159.99 -168.88 -178.59 167.41 159.71 149.93 136.23 125.06 MAG 6.71 6.09 5.56 4.95 4.38 3.86 3.44 3.11 2.82 2.59 2.21 1.84 1.66 1.45 1.20 1.02 S12 S22 ANG -16.80 -28.76 -35.65 -40.13 -42.64 -44.51 -45.87 -47.30 -48.65 -50.22 -54.00 -62.05 -70.04 -85.71 -125.28 -169.77 UPA835TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.90 0.84 0.77 0.69 0.60 0.52 0.44 0.38 0.32 0.28 0.20 0.13 0.11 0.13 0.21 0.28 S21 ANG -12.12 -23.51 -34.84 -45.03 -54.58 -62.89 -70.48 -77.63 -84.12 -90.92 -105.44 -137.90 -167.88 152.80 121.76 107.74 MAG 10.05 9.49 9.08 8.52 7.94 7.32 6.74 6.21 5.71 5.28 4.56 3.78 3.39 2.93 2.41 2.03 S12 ANG 165.07 152.86 142.06 132.57 123.96 116.79 109.99 104.22 99.08 94.41 86.53 76.56 70.79 62.58 50.64 39.80 MAG 0.02 0.03 0.05 0.06 0.07 0.08 0.08 0.09 0.10 0.11 0.12 0.14 0.15 0.18 0.21 0.24 S22 ANG 82.08 74.99 69.42 65.57 63.02 60.80 59.78 58.73 57.98 57.45 56.41 54.85 53.69 51.42 47.56 42.91 MAG 0.97 0.92 0.85 0.78 0.72 0.66 0.62 0.58 0.55 0.53 0.48 0.43 0.40 0.37 0.31 0.26 ANG -9.12 -17.06 -23.23 -28.22 -31.57 -34.45 -36.34 -38.08 -39.38 -40.58 -42.73 -46.37 -49.23 -54.00 -64.32 -78.22 Q2 VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 0.83 0.72 0.62 0.56 0.53 0.51 0.50 0.49 0.49 0.49 0.50 0.52 0.53 0.56 0.61 0.66 -36.95 -69.61 -97.36 -117.96 -133.20 -145.02 -154.27 -162.17 -168.79 -174.60 175.37 163.26 156.57 147.71 135.31 124.98 10.41 9.00 7.70 6.47 5.47 4.72 4.13 3.68 3.31 3.02 2.56 2.11 1.90 1.65 1.36 1.16 149.93 130.38 115.33 104.59 96.45 89.97 84.56 79.59 75.30 71.24 63.72 53.63 47.43 38.70 25.02 13.38 0.04 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.12 0.13 0.14 0.17 0.19 0.22 0.27 0.32 67.41 54.36 48.48 46.08 45.55 45.75 46.29 47.21 48.13 48.87 49.97 50.87 50.65 49.28 45.44 39.42 0.87 0.70 0.56 0.46 0.40 0.35 0.32 0.29 0.27 0.25 0.22 0.18 0.15 0.11 0.11 0.18 ANG -23.15 -36.92 -43.33 -46.73 -48.28 -49.37 -50.23 -50.94 -51.90 -53.05 -56.22 -64.21 -73.44 -94.06 -153.25 -163.89 UPA835TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 10 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.82 0.72 0.60 0.49 0.40 0.33 0.27 0.22 0.18 0.15 0.10 0.07 0.08 0.13 0.21 0.29 S21 ANG -17.52 -33.22 -46.83 -57.62 -65.90 -72.93 -79.33 -85.38 -91.73 -98.81 -118.22 -176.19 149.79 125.94 109.57 100.79 S12 MAG 16.52 14.93 13.32 11.65 10.15 8.90 7.89 7.07 6.39 5.83 4.95 4.05 3.61 3.12 2.54 2.14 ANG 159.99 144.21 131.03 120.45 112.22 105.92 100.37 95.73 91.61 87.88 81.32 72.83 67.81 60.46 49.58 39.46 MAG 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.08 0.09 0.10 0.11 0.14 0.15 0.18 0.22 0.25 ANG 145.65 124.63 109.90 100.27 93.07 87.38 82.41 77.92 74.02 70.24 63.22 53.72 47.63 39.20 26.11 14.52 MAG 0.04 0.05 0.07 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.15 0.18 0.20 0.23 0.28 0.33 S22 ANG 80.28 72.82 68.07 65.62 65.03 63.86 63.74 63.50 63.16 62.77 61.85 59.79 58.31 55.55 50.37 45.03 MAG 0.94 0.85 0.75 0.67 0.60 0.56 0.52 0.49 0.46 0.45 0.41 0.38 0.35 0.32 0.27 0.21 ANG 65.30 53.73 50.12 49.49 50.25 50.94 51.76 52.62 53.24 53.84 53.97 53.24 52.05 49.60 44.37 38.05 MAG 0.83 0.62 0.47 0.39 0.33 0.29 0.26 0.23 0.21 0.19 0.15 0.18 0.20 0.23 0.28 0.33 ANG -12.68 -22.43 -28.43 -32.14 -34.25 -35.78 -36.80 -37.69 -38.46 -39.30 -41.01 -44.69 -47.69 -53.15 -65.07 -81.46 Q2 VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.78 0.64 0.55 0.50 0.48 0.47 0.46 0.46 0.46 0.46 0.47 0.50 0.51 0.54 0.59 0.64 S21 ANG -43.98 -81.06 -109.37 -128.61 -142.36 -152.78 -161.04 -168.03 -173.82 -179.09 171.98 160.99 154.69 146.49 134.74 124.73 MAG 13.56 11.15 9.00 7.29 6.05 5.16 4.49 3.98 3.57 3.24 2.75 2.25 2.02 1.75 1.44 1.23 S12 BUILT-IN TRANSISTORS ANG -28.08 -42.31 -48.09 -50.66 -51.72 -52.25 -52.80 -53.35 -54.00 -55.03 -58.07 -66.67 -78.75 -110.79 174.41 146.24 ORDERING INFORMATION Q1 3-pin small mini mold part No. S22 NE68530 Q2 NE85630 The UPA832TF features the Q1 and Q2 in inverted positions. PART NUMBER UPA835TF-T1 QUANTITY 3000 PACKAGING Tape & Reel UPA835TF BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 6e-16 MJC 0.34 0.55 BF 109 120 XCJC 0 0.3 NF 1 0.98 CJS 0 0 VAF 15 10 VJS 0.75 0.75 IKF 0.19 0.08 MJS 0 0 ISE 7.9e-13 32e-16 FC 0.5 0.5 NE 2.19 1.93 TF 2.5e-12 12e-12 BR 1 12 XTF 5.2 6 NR 1.08 0.991 VTF 4.58 10 VAR 12.4 3.9 ITF 0.01 0.2 IKR Infinity 0.17 PTF 0 0 ISC 0 0 TR 1e-9 1e-9 NC 2 2 EG 1.11 1.11 RE 1.3 0.38 XTB 0 0 RB 10 4.16 XTI 3 3 RBM 8.34 3.6 KF 0 0 IRB 0.009 1.96e-4 AF 1 1 RC 10 2 CJE 0.4e-12 2.8e-12 VJE 0.81 1.3 MJE 0.5 0.5 CJC 0.18e-12 1.1e-12 VJC 0.75 0.7 (1) Gummel-Poon Model UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE =0.5 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UPA835TF SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 Pin_1 LC 0.09 pF 0.05 nH CCB1 C_C1E1 0.05 pF Pin_2 CCE1 0.14 pF LE LE1 0.05 nH 0.7 nH C_E1C2 0.05 pF Q1 LB1 LB 0.45 nH 0.05 nH C_E1B2 0.3 pF LE2 CCE2 Pin_6 C_B1B2 0.05 pF LE 0.05 nH 0.85 nH Pin_5 C_B2E2 0.05 pF 0.16 pF LC Pin_3 0.05 nH CCB2 0.11 pF Q2 LB2 0.1 nH LB 0.05 nH Pin_4 0.1 pF CCEPKG2 0.07 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 ORDERING INFORMATION BUILT-IN TRANSISTORS 3-pin small mini mold part No. PART NUMBER UPA835TF-T1 Q1 Q2 NE68530 NE85630 QUANTITY 3000 PACKAGING Tape & Reel The UPA832TF features the Q1 and Q2 in inverted positions. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE