NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS (Units in mm) • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • LOW CURRENT OPERATION PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 0.65 DESCRIPTION NEC's UPA808T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 1 6 2 5 3 4 2.0 ± 0.2 0.2 (All Leads) 1.3 0.9 ± 0.1 0.7 +0.10 0.15 - 0.05 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 0 ~ 0.1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA808T S06 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE1 Forward Current Gain at VCE = 2 V, IC = 20 mA fT Cre2 |S21E|2 NF Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz GHz Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz pF Insertion Power Gain at VCE = 2 V, IC =20 mA, f = 2 GHz dB Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz dB 70 100 9 11 0.4 7 140 0.8 8.5 1.3 2 hFE1/hFE2 hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 0.85 hFE2 = Larger Value of Q1 or Q2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA808T-T1, 3K per reel. California Eastern Laboratories UPA808T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 5 VCEO Collector to Emitter Voltage V 3 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation 1 Die 2 Die mW mW 90 180 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25˚C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 200 2 Elements in Total 100 180 mW Per Element 0 Collector Current, lc (mA) Total Power Dissipation, PT (mW) VCE = 2 V 90 mW 50 100 30 20 10 0 150 0.5 1.0 Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 25 500 20 200 µA 180 µA 160 µA 15 140 µA 120 µA 10 100 µA 80 µA 60 µA 5 40 µA DC Current Gain,hFE Collector Current, lc (mA) 40 200 VCE = 2 V 100 VCE = 1 V 50 20 lB = 20 µA 10 0 1.0 2.0 3.0 Collector to Emitter Voltage, VCE (V) 1 2 5 10 20 Collector Current, lc (mA) 50 100 UPA808T TYPICAL PERFORMANCE CURVES (TA = 25˚C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 Insertion Power Gain, |S21E|2 (dB) Gain Bandwidth Product, fT (GHz) 15 INSERTION POWER GAIN vs. COLLECTOR CURRENT f = 2 GHz VCE = 2 V 10 VCE = 1 V 5 f = 2 GHz VCE = 2 V VCE = 1 V 5 0 1 2 3 5 7 1 10 3 7 5 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 3 10 Feedback Capacitance, CRE (pF) 0.8 f = 2 GHz Noise Figure, NF (dB) 2 2 VCE = 2 V VCE = 1 V 1 1 2 3 5 7 10 ORDERING INFORMATION QUANTITY 3000 0.6 0.4 0.2 0 2.0 4.0 6.0 8.0 Collector to Base Voltage, VCB (V) Collector Current, lc (mA) PART NUMBER UPA808T-T1-A f = 1 MHz PACKAGING Tape & Reel 10.0 UPA808T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA808T(Q1) VCE = 1 V, IC = 1 mA FREQUENCY S11 (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.964 0.951 0.906 0.837 0.762 0.692 0.629 0.574 0.529 0.489 0.456 0.429 0.402 0.383 0.363 0.344 S21 ANG -7.10 -15.70 -31.00 -45.10 -57.80 -68.70 -78.50 -87.50 -95.40 -103.20 -110.30 -117.70 -124.80 -131.80 -139.90 -147.70 MAG 3.204 3.104 2.978 2.814 2.606 2.378 2.190 2.018 1.860 1.743 1.629 1.534 1.468 1.402 1.347 1.306 S12 ANG 169.70 164.00 149.60 136.50 125.10 115.50 106.90 99.40 93.00 87.30 81.90 77.00 72.50 68.30 64.10 60.40 MAG 0.026 0.052 0.099 0.134 0.160 0.178 0.190 0.199 0.205 0.210 0.214 0.216 0.218 0.220 0.225 0.227 S22 ANG 83.50 78.20 66.80 57.70 50.40 44.60 40.40 37.10 34.70 33.10 32.00 31.10 31.10 31.50 31.10 31.70 MAG 0.993 0.979 0.932 0.869 0.806 0.750 0.702 0.663 0.632 0.608 0.587 0.572 0.556 0.542 0.532 0.521 ANG -5.60 -11.80 -22.40 -31.40 -38.70 -44.50 -49.10 -52.80 -56.00 -58.70 -61.10 -63.20 -65.30 -67.40 -68.40 -70.30 K MAG1 0.116 0.098 0.190 0.277 0.363 0.451 0.539 0.624 0.705 0.775 0.848 0.914 0.975 1.030 1.072 1.116 (dB) 20.907 17.759 14.783 13.222 12.119 11.258 10.617 10.061 9.578 9.191 8.815 8.514 8.283 6.973 6.134 5.526 K MAG1 0.126 0.086 0.179 0.264 0.350 0.438 0.524 0.609 0.691 0.763 0.837 0.901 0.964 1.016 1.070 1.116 (dB) 20.782 18.062 15.068 13.463 12.330 11.475 10.807 10.276 9.796 9.385 9.018 8.711 8.483 7.381 6.367 5.723 UPA808T(Q2) VCE = 1 V, IC = 1 mA FREQUENCY S11 (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.963 0.954 0.907 0.842 0.765 0.695 0.634 0.581 0.540 0.506 0.486 0.474 0.463 0.461 0.456 0.453 S21 ANG -7.00 -16.20 -32.50 -47.90 -62.60 -75.80 -87.90 -99.50 -110.20 -120.70 -130.10 -139.30 -147.30 -154.50 -161.30 -167.60 MAG 3.233 3.200 3.084 2.930 2.736 2.514 2.324 2.142 1.975 1.840 1.707 1.598 1.516 1.434 1.370 1.318 S12 ANG 169.80 164.10 149.60 136.20 124.00 113.40 103.70 95.20 87.50 80.70 74.40 68.60 63.20 58.30 53.40 48.90 MAG 0.027 0.050 0.096 0.132 0.160 0.179 0.193 0.201 0.207 0.212 0.214 0.215 0.215 0.219 0.218 0.219 S22 ANG 83.30 79.10 67.20 57.20 48.70 41.60 36.10 31.50 27.70 24.70 22.30 20.30 19.20 18.60 17.40 17.30 MAG 0.991 0.981 0.937 0.875 0.807 0.743 0.685 0.636 0.595 0.561 0.533 0.511 0.491 0.468 0.459 0.445 ANG -5.40 -10.90 -21.10 -30.10 -37.90 -44.10 -49.40 -53.80 -57.80 -61.40 -64.40 -67.30 -70.30 -72.40 -74.90 -77.30 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA808T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA808T(Q1) VCE = 2 V, IC = 3 mA FREQUENCY S11 (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.906 0.861 0.751 0.624 0.521 0.438 0.376 0.325 0.285 0.251 0.223 0.202 0.181 0.164 0.150 0.138 S21 ANG -10.80 -23.80 -45.10 -62.80 -76.70 -88.00 -97.20 -105.80 -113.30 -120.50 -127.50 -134.70 -141.70 -147.70 -156.90 -165.00 MAG 8.655 8.210 7.280 6.278 5.345 4.587 4.003 3.541 3.173 2.884 2.640 2.436 2.280 2.135 2.016 1.919 S12 ANG 167.00 157.00 138.70 124.00 112.90 104.30 97.40 91.30 86.20 81.70 77.50 73.60 70.00 66.60 63.20 60.20 MAG 0.023 0.041 0.073 0.093 0.107 0.118 0.128 0.137 0.146 0.156 0.166 0.176 0.187 0.198 0.210 0.221 S22 ANG 79.00 74.40 63.10 56.00 52.10 50.10 49.70 49.50 49.70 50.20 50.80 51.00 51.50 52.00 51.50 51.50 MAG 0.973 0.933 0.818 0.704 0.616 0.553 0.507 0.476 0.454 0.439 0.430 0.422 0.417 0.412 0.408 0.405 ANG -9.20 -18.10 -32.10 -41.40 -47.40 -51.30 -53.80 -55.50 -56.90 -58.10 -59.20 -60.10 -61.10 -62.40 -63.00 -64.30 K MAG1 0.185 0.172 0.305 0.448 0.576 0.692 0.789 0.873 0.943 0.994 1.035 1.069 1.089 1.109 1.119 1.126 (dB) 25.755 23.016 19.988 18.293 16.986 15.896 14.952 14.124 13.371 12.669 10.869 9.807 9.043 8.315 7.727 7.229 K MAG1 0.116 0.144 0.287 0.425 0.556 0.667 0.767 0.856 0.929 0.984 1.030 1.069 1.095 1.112 1.134 1.142 (dB) 26.597 23.383 20.407 18.673 17.396 16.322 15.411 14.607 13.868 13.173 10.341 9.807 9.532 8.774 8.147 7.629 UPA808T(Q2) VCE = 2 V, IC = 3 mA FREQUENCY S11 (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.900 0.870 0.770 0.650 0.544 0.463 0.403 0.357 0.325 0.304 0.291 0.285 0.280 0.283 0.279 0.280 S21 ANG -10.70 -23.40 -45.30 -64.40 -80.70 -94.70 -107.20 -119.00 -130.00 -140.10 -149.30 -157.40 -164.30 -169.90 -175.10 -178.70 MAG 8.679 8.281 7.468 6.557 5.655 4.888 4.276 3.784 3.387 3.073 2.804 2.581 2.408 2.242 2.112 2.002 S12 ANG 167.40 157.90 139.70 124.40 112.30 102.60 94.60 87.60 81.60 76.10 71.10 66.30 61.90 57.80 53.70 49.80 MAG 0.019 0.038 0.068 0.089 0.103 0.114 0.123 0.131 0.139 0.148 0.157 0.165 0.174 0.186 0.194 0.204 S22 ANG 83.20 76.10 63.00 54.80 49.30 46.40 44.50 43.30 42.70 42.20 41.70 41.30 41.10 40.80 39.80 39.40 MAG 0.973 0.941 0.834 0.719 0.622 0.549 0.492 0.449 0.416 0.391 0.371 0.356 0.343 0.325 0.320 0.313 ANG -8.50 -16.60 -30.00 -39.50 -46.00 -50.50 -53.70 -56.10 -58.30 -60.00 -61.60 -63.10 -64.70 -65.80 -66.80 -67.70 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA808T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA808T(Q1) VCE = 2 V, IC = 5 mA FREQUENCY S11 (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.838 0.773 0.617 0.480 0.383 0.314 0.264 0.223 0.191 0.166 0.144 0.129 0.114 0.101 0.094 0.088 S21 ANG -15.70 -31.30 -57.00 -76.00 -90.10 -101.70 -111.20 -120.00 -128.40 -136.40 -144.50 -152.60 -160.70 -168.00 -178.60 171.70 MAG 13.071 12.042 9.858 7.906 6.425 5.360 4.590 4.010 3.565 3.214 2.927 2.689 2.504 2.337 2.194 2.078 S12 ANG 163.70 150.90 129.90 115.30 105.20 97.70 91.80 86.50 82.00 78.00 74.30 70.80 67.50 64.40 61.40 58.60 MAG 0.022 0.038 0.064 0.080 0.093 0.105 0.116 0.128 0.141 0.154 0.166 0.179 0.193 0.206 0.220 0.233 S22 ANG 72.70 71.70 60.90 56.50 55.30 55.30 56.00 56.50 56.80 57.00 57.10 56.90 56.80 56.90 55.80 55.30 MAG 0.951 0.881 0.715 0.585 0.500 0.445 0.408 0.386 0.372 0.365 0.360 0.358 0.357 0.356 0.356 0.356 ANG -12.50 -23.70 -39.10 -47.50 -51.90 -54.40 -55.70 -56.50 -57.20 -57.80 -58.40 -59.20 -60.10 -61.30 -62.00 -63.30 K MAG1 0.268 0.237 0.427 0.596 0.731 0.836 0.919 0.979 1.019 1.047 1.073 1.088 1.093 1.103 1.105 1.106 (dB) 27.739 25.009 21.876 19.949 18.394 17.080 15.974 14.959 13.176 11.870 10.810 9.959 9.269 8.594 8.020 7.523 K MAG1 0.158 0.224 0.396 0.567 0.705 0.814 0.897 0.967 1.015 1.047 1.079 1.094 1.104 1.114 1.120 1.123 (dB) 28.148 25.278 22.222 20.333 18.844 17.567 16.450 15.482 13.833 12.429 11.332 10.473 9.761 9.015 8.451 7.933 UPA808T(Q2) VCE = 2 V, IC = 5 mA FREQUENCY S11 (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.840 0.786 0.643 0.508 0.410 0.343 0.299 0.266 0.247 0.235 0.230 0.229 0.228 0.232 0.230 0.232 S21 ANG -15.00 -30.50 -57.00 -78.00 -94.80 -109.70 -122.50 -134.90 -146.20 -156.00 -165.10 -171.90 -177.70 178.40 174.30 171.50 MAG 13.056 12.136 10.174 8.314 6.820 5.711 4.901 4.275 3.796 3.418 3.106 2.849 2.648 2.454 2.308 2.181 S12 ANG 164.50 152.10 131.10 115.40 104.30 95.80 88.70 82.60 77.30 72.50 68.00 63.70 59.60 55.70 51.90 48.20 MAG 0.020 0.036 0.061 0.077 0.089 0.100 0.111 0.121 0.132 0.144 0.154 0.166 0.178 0.192 0.203 0.215 S22 ANG 80.40 72.30 60.90 54.80 52.10 50.80 50.40 50.10 49.70 49.30 48.70 47.80 47.20 46.20 44.80 43.80 MAG 0.957 0.894 0.736 0.600 0.503 0.437 0.388 0.354 0.328 0.309 0.294 0.284 0.275 0.259 0.258 0.252 ANG -11.50 -21.80 -37.00 -45.80 -51.00 -54.00 -56.00 -57.50 -58.90 -60.10 -61.10 -62.20 -63.40 -64.20 -64.60 -65.20 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA808T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA808T(Q1) VCE = 3 V, IC = 3 mA FREQUENCY S11 (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.912 0.875 0.769 0.643 0.538 0.453 0.386 0.333 0.290 0.253 0.223 0.200 0.176 0.158 0.141 0.128 S21 ANG -10.30 -22.40 -42.80 -59.60 -72.90 -83.60 -92.40 -100.20 -107.20 -114.00 -120.20 -126.90 -132.70 -138.40 -146.80 -155.20 MAG 8.671 8.248 7.360 6.398 5.475 4.713 4.122 3.650 3.273 2.975 2.721 2.511 2.349 2.200 2.075 1.973 S12 ANG 167.30 157.70 139.80 125.30 114.10 105.60 98.60 92.50 87.40 82.80 78.60 74.70 71.10 67.80 64.50 61.50 MAG 0.019 0.039 0.068 0.088 0.102 0.113 0.122 0.131 0.140 0.150 0.159 0.169 0.180 0.190 0.202 0.213 S22 ANG 86.00 73.60 62.90 56.40 52.60 50.80 50.40 50.20 50.70 51.00 51.60 51.80 52.30 53.00 52.30 52.80 MAG 0.969 0.932 0.825 0.717 0.632 0.571 0.526 0.495 0.475 0.459 0.450 0.443 0.438 0.434 0.430 0.428 ANG -8.60 -16.90 -30.10 -39.00 -44.80 -48.40 -50.80 -52.50 -53.80 -54.90 -55.90 -56.90 -57.90 -59.10 -59.70 -60.90 K MAG1 0.080 0.200 0.319 0.452 0.577 0.688 0.787 0.870 0.936 0.988 1.033 1.064 1.084 1.104 1.114 1.118 (dB) 26.593 23.253 20.344 18.616 17.298 16.202 15.287 14.450 13.688 12.974 11.225 10.174 9.389 8.669 8.063 7.574 K MAG1 0.152 0.187 0.299 0.431 0.555 0.666 0.763 0.848 0.925 0.977 1.025 1.065 1.090 1.110 1.126 1.138 (dB) 26.599 23.763 20.718 19.003 17.718 16.679 15.764 14.921 14.208 13.505 11.892 10.726 9.904 9.125 8.521 7.979 UPA808T(Q2) VCE = 3 V, IC = 3 mA FREQUENCY S11 (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.909 0.882 0.786 0.668 0.561 0.476 0.412 0.363 0.326 0.301 0.286 0.278 0.271 0.273 0.268 0.268 S21 ANG -10.10 -22.00 -43.00 -61.10 -76.60 -90.20 -102.20 -113.60 -124.10 -134.10 -143.00 -151.60 -158.60 -164.50 -169.50 -173.50 MAG 8.683 8.324 7.550 6.677 5.794 5.027 4.411 3.913 3.505 3.183 2.904 2.671 2.492 2.318 2.185 2.069 S12 ANG 167.70 158.60 140.80 125.80 113.70 104.10 96.00 88.90 82.80 77.40 72.30 67.60 63.20 59.00 54.90 51.10 MAG 0.019 0.035 0.064 0.084 0.098 0.108 0.117 0.126 0.133 0.142 0.150 0.158 0.167 0.178 0.187 0.196 S22 ANG 82.00 74.20 63.40 55.40 50.20 47.10 45.50 44.10 43.50 43.10 42.70 42.30 42.00 41.70 40.80 40.60 MAG 0.970 0.940 0.841 0.733 0.641 0.569 0.514 0.471 0.439 0.415 0.396 0.380 0.367 0.350 0.346 0.339 ANG -7.70 -15.40 -27.90 -36.90 -43.10 -47.40 -50.40 -52.60 -54.60 -56.30 -57.70 -59.10 -60.60 -61.70 -62.60 -63.50 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA808T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1, Q2 Parameters Q1, Q2 IS 8e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1 CJS 0 0.75 VAF 17 VJS IKF 0.18 MJS 0 ISE 3.3e-15 FC 0.37 NE 1.48 TF 6e-12 BR 9.05 XTF 11.9 NR 1.05 VTF 9.55 VAR 4.3 ITF 1.78 IKR 0.009 PTF 69.1 ISC 4e-15 TR 1e-9 NC 1.5 EG 1.11 RE 0.8 XTB 0 RB 11.1 XTI 3 RBM 2.46 KF 0 IRB 0.017 AF 1 RC 7.5 CJE 0.415e-12 VJE 0.68 MJE 0.53 CJC 0.102e-12 VJC 0.29 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 10/98 UPA808T NONLINEAR MODEL SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 Pin_1 LC 0.26 pF 0.05 nH CCB1 C_C1E1 0.05 pF Pin_2 CCE1 0.19 pF LE LE1 0.05 nH 0.95 nH Q1 LC LB 0.45 nH 0.05 nH C_E1B2 0.1 pF LB2 C_E1C2 0.05 pF Pin_3 LB1 C_B1B2 0.05 pF LB 0.05 nH 0.7 nH CCB2 0.26 pF Pin_5 C_B2E2 0.05 pF Q2 LE2 0.8 nH 0.05 nH Pin_6 LE 0.05 nH Pin_4 0.19 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 10/98 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-02 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM 8/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.