DATA SHEET BiCMOS INTEGRATED CIRCUIT µ PC2807,2807A PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, detector circuit, and waveform-shaping circuit on a single chip. FEATURES • Only PIN photodiode required as an external component. • Following carrier frequencies (fO) selectable (five types): µ PC2807 : fO = 32.7, 36.0, 36.7, 37.9 kHz µ PC2807A : fO = 40.0 kHz • Fixed trap frequency fT = 54 kHz • Active-low output • Supplied in form of wafer APPLICATION • Receiver module of infrared remote controller ORDERING INFORMATION Part Number Condition in shipment µ PC2807W Wafer µ PC2807AW Wafer Contact an NEC sales representative in advance since a memorandum on product quality need to be prepared for shipment in the form of wafer. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13198EJ1V0DS00 (1st edition) Date Published May 2000 NS CP (K) Printed in Japan The mark ★ shows major revised points. 1998, 2000 µ PC2807, 2807A BLOCK DIAGRAM ABLC IN 9 VCC PAD1 6 3 Waveform-shaping circuit First-stage Limiter amplifier amplifier I/V 22 kΩ BPF TRAP 5 Detector Carrier elimination TRAP skip 13 Trimming circuit 12 11 10 PAD6 PAD4 PAD5 PAD3 2 fO setting 4 2 1 S3 S2 S1 Data Sheet S13198EJ1V0DS00 8 7 GND2 GND1 OUT µ PC2807, 2807A PAD FUNCTION Symbol Pad No. VCC 6 Function Power pad. Apply a voltage of 5 V ± 10 %. Connect an external smoothing filter if noise on power line is high. GND1 7 GND pad (for output transistor) GND2 8 GND pad (for circuits excluding output transistor) IN 9 Input pad. Internal impedance is 190 kΩ TYP. PIN photodiode can be directly connected. OUT 5 Output pad. Open-collector output with pull-up resistor (22 kΩ TYP.) To connect pull-up resistor, use resistor of 10 kΩ or higher. S1 1 BPF center frequency setting pads. S2 2 Connect pad corresponding to carrier frequency to be used to GND S3 4 PAD1 3 Note . BPF output pad. Parameters such as voltage gain and BPF bandwidth can be tested. Do not connect this pad to anything on final assembly. PAD3 10 PAD4 11 PAD5 12 PAD6 13 Test and trimming pads. Do not connect these pads to anything. Note Connect each of BPF center frequency setting pads as follows depending on the carrier frequency. • µ PC2807 Carrier Frequency S1 S2 S3 32.7 kHz GND Leave unconnected. Leave unconnected. 36.0 kHz GND GND GND 36.7 kHz Leave unconnected. GND GND 37.9 kHz Leave unconnected. Leave unconnected. Leave unconnected. • µ PC2807A Carrier Frequency 40.0 kHz S1 Leave unconnected. S2 Leave unconnected. Data Sheet S13198EJ1V0DS00 S3 Leave unconnected. 3 µ PC2807, 2807A ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings (TA = +25 ± 3 °C) Parameter Symbol Ratings Unit Supply voltage VCC 5.5 V Output sink current IOSINK 2.5 mA Input voltage VIN 0 to VCC V Storage temperature Tstg −40 to +125 °C Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Recommended Operating Conditions (TA = 25 ± 3 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply voltage VCC 4.5 5.0 5.5 V Operating ambient temperature TA −25 +25 +80 °C 4 Data Sheet S13198EJ1V0DS00 µ PC2807, 2807A Electrical Characteristics (TA = +25 ± 3 °C, VCC = 5 V) Parameter Circuit current Symbol ICC Conditions With no signal applied. MIN. TYP. MAX. Unit 1.1 1.5 1.9 mA S1. S2, and S3: Leave unconnected. Low-level output voltage 1 VOL1 Without external pull-up resistor − 0.05 0.4 V Low-level output voltage 2 VOL2 With external 10-kΩ pull-up resistor connected − 0.10 0.5 V High-level output voltage VOH 4.8 5.0 − V Voltage gain 1 Av1 70 80 86 dB 72 82 88 dB 1.5 3.0 4.5 kHz 400 600 800 µs 400 600 800 µs S1, S2, and S3: Leave unconnected., VIN = 30 dB µ V µ PC2807 Av2 Voltage gain 2 BPF bandwidth fBW , f 37.9 kHz S1, S2, and S3: Leave unconnected., VIN = 30 dB µ V µ PC2807A Note1 Note1 , f = 40.0 kHz −3 dB bandwidth. S1, S2, S3: Leave unconnected., VIN = 30 dB µ V Output pulse width 1 tBW1 Note1 S1, S2, and S3: Leave unconnected., VIN = 500 µ Vp-p, f = 37.9 kHz Note3 , Burst length: 600 µ s, Cycle: 1.2 ms Note2 Average value of output from start of signal input to 60th pulse Output pulse width 2 tPW2 S1, S2, and S3: Leave unconnected., VIN = 50 mVp-p, f = 37.9 kHz Note3 , Burst length: 600 µ s, Cycle: 1.2 ms Note2 Average value of output from start of signal input to 60th pulse Notes 1. 2. 30 dB µ V = 31.6 µ V r.m.s. Input the following burst signal. 37.9-kHz carrier 600 µ s 600 µ s 600 µ s 3. f = 37.9 kHz for the µ PC2807. In the µ PC2807A, measurement is at f = 40.0 kHz. Data Sheet S13198EJ1V0DS00 5 µ PC2807, 2807A APPLICATION CIRCUIT EXAMPLE (at carrier frequency of 37.9 kHz) 5V + 3 6 VCC ABLC IN PIN Photodiode First-stage Limiter amplifier amplifier I/V BPF TRAP 5 Detector OUT Carrier elimination 13 12 PAD4 Trimming circuit PAD5 PAD6 TRAP skip 11 fO setting S3 10 S2 4 Remark f = 37.9 kHz for the µ PC2807. In the µ PC2807A, f = 40.0 kHz. 6 OUTPUT 22 kΩ PAD3 9 Waveform-shaping circuit PAD1 Data Sheet S13198EJ1V0DS00 GND2 S1 2 1 8 GND1 7 µ PC2807, 2807A NOTES FOR BiCMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS Note: No connection for device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. Input levels of devices must be fixed high or low by using a pull-up or pulldown circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF BiCMOS DEVICES Note: Power-on does not necessarily define initial status of device. Production process of BiCMOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet S13198EJ1V0DS00 7 µ PC2807, 2807A • The information in this document is current as of May, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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