NEC NES1823P-45

PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-45
45 W L, S-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high
linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to
2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere
from 0.8 to 2.3 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon
dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• VDS = 12.0 V operation
• High output power: Pout = 45 W TYP.
• High linear gain: GL = 12 dB TYP.
• High power added efficiency: ηadd = 45 % TYP. @ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.20 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-45
Package
T-86
Supplying Form
ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14752EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan
©
2000
NES1823P-45
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, T A = +25 °C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
19
V
Gate to Source Voltage
VGSO
−7
V
Gate to Drain Voltage
VGDO
−22
V
Drain Current
ID
24
A
Gate Current
IG
240
mA
165
W
Total Power Dissipation
Ptot
Note
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−65 to +175
°C
Note TC = +25 °C
RECOMMENDED OPERATING CONDITIONS
Parameter
MIN.
TYP.
MAX.
Unit
VDS
−
−
12.0
V
Gcomp
−
−
3.0
dB
Channel Temperature
Tch
−
−
+150
°C
Set Drain Current
IDset
−
4.0
6.0
A
−
−
30
Ω
MIN.
TYP.
MAX.
Unit
−
24.0
−
A
−4.0
−2.6
−
V
−
0.7
0.9
°C/W
45.5
46.5
−
dBm
−
7
−
A
−
45
−
%
11
12
−
dB
−
−40
−
dBc
Drain to Source Voltage
Gain Compression
Gate Resistance
Symbol
Test Conditions
VDS = 12.0 V, RF OFF
Note
Rg
Note Rg is the series resistance between the gate supply and the FET gate.
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
Saturated Drain Current
IDSS
VDS = 2.5 V, VGS = 0 V
Pinch-off Voltage
Vp
VDS = 2.5 V, ID = 110 mA
Thermal Resistance
Rth
Channel to Case
Output Power
Pout
f = 2.20 GHz, VDS = 12.0 V,
Drain Current
ID
Pin = 37.5 dBm, Rg = 30 Ω,
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion
ηadd
GL
IDset = 4.0 A Total (RF OFF)
Note1
Note2
IM3
∆f = 5 MHz,
Pout = 37 dBm (2 tones total)
Notes 1. IDset = 2.0 A each drain
2. Pin = 21 dBm
2
Preliminary Data Sheet P14752EJ1V0DS00
NES1823P-45
TYPICAL CHARACTERISTICS (TA = +25 °C)
OUTPUT POWER,
POWER ADDED EFFICIENCY vs.
INPUT POWER [Power Matched]
20
60
50
IDset = 4 A (total)
3 A (total)
40
2 A (total)
40
4 A (total)
3 A (total)
2 A (total)
35
30
20
15
20
η add
25
VDS = 12.0 V
f = 2.20 GHz (1 tone)
20
25
30
30
35
40
10
0
45
Drain Current ID (A)
45
Power Added Efficiency ηadd (%)
Output Power Pout (dBm)
Pout
10
VDS = 12.0 V
f = 2.20 GHz (1 tone)
IG
15
0
IDset = 4 A (total)
3 A (total)
2 A (total)
10
Gate Current IG (mA)
50
DRAIN CURRENT, GATE CURRENT
vs. INPUT POWER [Power Matched]
–10
4 A (total)
3 A (total)
5 2 A (total)
–20
ID
0
15
20
Input Power Pin (dBm)
25
30
35
40
–30
45
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Preliminary Data Sheet P14752EJ1V0DS00
3
NES1823P-45
S-PARAMETERS
VDS = 12.0 V, IDset = 2.0 A each drain
FREQUENCY
4
S11
S21
S12
S22
GHz
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
1.200
1.250
1.300
1.350
1.400
1.450
1.500
1.550
1.600
1.650
1.700
1.750
1.800
1.850
1.900
1.950
2.000
2.050
2.100
2.150
2.200
2.250
2.300
2.350
2.400
2.450
2.500
2.550
2.600
2.650
2.700
2.750
2.800
2.850
2.900
2.950
3.000
0.944
0.941
0.934
0.930
0.923
0.914
0.904
0.896
0.882
0.866
0.846
0.822
0.804
0.774
0.739
0.707
0.688
0.673
0.676
0.697
0.726
0.748
0.778
0.803
0.826
0.838
0.854
0.866
0.878
0.886
0.893
0.901
0.909
0.916
0.922
0.930
0.940
169.6
168.3
167.2
166.5
165.3
164.1
162.8
162.1
160.8
159.4
158.1
157.0
156.3
155.7
155.9
157.1
158.5
161.3
164.4
166.9
168.1
168.3
167.9
167.0
165.7
164.8
163.3
161.9
160.4
158.9
157.9
156.4
154.8
153.2
152.0
150.5
148.7
1.006
1.014
1.022
1.028
1.048
1.065
1.088
1.115
1.146
1.186
1.241
1.302
1.336
1.415
1.481
1.520
1.542
1.537
1.484
1.378
1.295
1.190
1.080
0.957
0.880
0.806
0.739
0.673
0.615
0.568
0.533
0.509
0.458
0.440
0.424
0.411
0.375
40.6
37.3
33.9
31.5
27.6
23.8
19.6
16.8
12.0
6.9
1.4
−5.3
−9.5
−17.4
−26.2
−36.7
−43.6
−55.3
−66.9
−78.3
−88.0
−95.4
−102.9
−109.2
−116.3
−120.3
−125.3
−128.9
−135.5
−137.4
−140.6
−143.9
−147.8
−150.4
−152.8
−156.8
−159.5
0.006
0.006
0.007
0.007
0.007
0.007
0.008
0.008
0.008
0.008
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.008
0.007
0.006
0.006
0.005
0.005
0.005
0.006
0.006
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.011
0.011
0.013
10.8
8.9
8.0
6.1
3.6
−0.1
−3.1
−5.3
−9.9
−14.8
−20.0
−27.1
−33.0
−40.8
−50.7
−64.6
−73.8
−89.8
−106.1
−126.4
−145.1
−158.9
−177.3
161.8
145.6
134.5
123.1
108.6
104.7
96.4
91.3
85.7
81.6
74.9
72.8
69.3
65.7
0.836
0.836
0.834
0.832
0.832
0.829
0.828
0.827
0.825
0.827
0.825
0.826
0.828
0.832
0.839
0.849
0.855
0.865
0.871
0.873
0.873
0.873
0.868
0.863
0.856
0.853
0.846
0.841
0.839
0.838
0.835
0.835
0.835
0.834
0.833
0.833
0.834
173.8
173.3
172.9
172.5
172.1
171.6
171.2
171.0
170.7
170.4
170.4
170.2
170.2
170.1
170.2
169.9
169.6
169.0
168.4
167.4
166.6
166.2
165.8
165.4
165.2
165.2
165.0
165.0
164.7
165.0
165.0
165.1
165.3
165.4
165.5
165.2
165.0
Preliminary Data Sheet P14752EJ1V0DS00
NES1823P-45
PACKAGE DIMENSIONS
G2
45˚
S
S
D1
19.4±0.4
G1
11.4±0.3
R1.2±0.3
5.7±0.3
2.4±0.3
T-86 (UNIT: mm)
D2
1.4±0.2
4.7 MAX.
24.5±0.3
PIN CONNECTIONS
1.8±0.2
0.1
2.4±0.2
7.8±0.2
14.5±0.3
20.9±0.3
G1, G2 : Gate
D1, D2 : Drain
S
: Source
Preliminary Data Sheet P14752EJ1V0DS00
5
NES1823P-45
RECOMMENDED MOUNTING CONDITIONS FOR CORRECT USE
(1) Fix to heat sink or mount surface completely with screws at the four holes of the flange.
(2) The recommended torque strength of the screws is 30 N typical using M2.3 type screws.
(3) The recommended flatness of the mount surface is less than ±10 µm (roughness of surface is ∇∇∇).
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Partial Heating
Soldering Conditions
Recommended Condition Symbol
Pin temperature: 260 °C or below,
Time: 5 seconds or less (per pin row)
For details of recommended soldering conditions, please contact your local NEC sales office.
6
Preliminary Data Sheet P14752EJ1V0DS00
−
NES1823P-45
CAUTION
The great care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
Preliminary Data Sheet P14752EJ1V0DS00
7
NES1823P-45
• The information in this document is current as of May, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4