NEC UPD4564323G5-A80-9JH

DATA SHEET
MOS INTEGRATED CIRCUIT
µ PD4564323
for Rev. E
64M-bit Synchronous DRAM
4-bank, LVTTL
Description
The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as
524,288 words × 32 bits × 4 banks.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 86-pin TSOP (II).
Features
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• ×32 organization
• Byte control by DQM0, DQM1, DQM2 and DQM3
• Programmable Wrap sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable /CAS latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible inputs and outputs
• 4,096 refresh cycles / 64 ms
• Burst termination by Burst stop command and Precharge command
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
M14376EJ2V0DS00 (2nd edition)
Date Published December 1999 NS CP (K)
Printed in Japan
The mark • shows major revised points.
©
1999
µPD4564323 for Rev. E
★
Ordering Information
Organization
(word × bit × bank)
Clock frequency
MHz (MAX.)
Package
512K × 32 × 4
166
86-pin Plastic TSOP (II)
µPD4564323G5-A70-9JH
143
(10.16 mm (400))
µPD4564323G5-A80-9JH
125
µPD4564323G5-A10-9JH
100
µPD4564323G5-A10B-9JH
100
Part number
µPD4564323G5-A60-9JH
2
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
★
Part Number
µ PD4564323G5 - A60
NEC Memory
Synchronous
DRAM
Memory Density
Minimum Cycle Time
64 : 64M bits
60 : 6 ns (166MHz)
70 : 7 ns (143MHz)
80 : 8 ns (125MHz)
10 : 10 ns (100MHz)
10B : 10 ns (100MHz)
Organization
32 : x32
Number of Banks
& Interface
3 : 4Bank, LVTTL
Low Voltage
A : 3.3 ± 0.3 V
Package
G5 : TSOP(II)
Data Sheet M14376EJ2V0DS00
3
µPD4564323 for Rev. E
Pin Configuration
/xxx indicates active low signal.
[µPD4564323]
86-pin Plastic TSOP (II) (10.16 mm (400))
512K words × 32 bits × 4 banks
VCC
DQ0
VCCQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VCCQ
DQ5
DQ6
VSSQ
DQ7
NC
VCC
DQM0
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10(AP)
A0
A1
A2
DQM2
VCC
NC
DQ16
VSSQ
DQ17
DQ18
VCCQ
DQ19
DQ20
VSSQ
DQ21
DQ22
VCCQ
DQ23
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
VSS
DQ15
VSSQ
DQ14
DQ13
VCCQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VCCQ
DQ8
NC
VSS
DQM1
NC
NC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
VSS
NC
DQ31
VCCQ
DQ30
DQ29
VSSQ
DQ28
DQ27
VCCQ
DQ26
DQ25
VSSQ
DQ24
VSS
Note
A0 to A10
: Address inputs
BA0, BA1
: Bank select
DQ0 to DQ31 : Data inputs / outputs
CLK
: Clock input
CKE
: Clock enable
/CS
: Chip select
/RAS
: Row address strobe
/CAS
: Column address strobe
/WE
: Write enable
DQM0 to DQM3 : DQ mask enable
VCC
: Supply voltage
VSS
: Ground
VCCQ
: Supply voltage for DQ
VSSQ
: Ground for DQ
NC
: No connection
4
Note A0 to A10 : Row address inputs
Data Sheet M14376EJ2V0DS00
A0 to A7 : Column address inputs
µPD4564323 for Rev. E
Block Diagram
CLK
CKE
Clock
Generator
Bank D
Bank C
Address
Mode
Register
Row
Address
Buffer
&
Refresh
Counter
Row Decoder
Bank B
Bank A
Data Sheet M14376EJ2V0DS00
DQM
Column Decoder &
Latch Circuit
Data Control Circuit
Input & Output
Buffer
/WE
Column
Address
Buffer
&
Burst
Counter
Latch Circuit
/CAS
Control Logic
/RAS
Command Decoder
Sense Amplifier
/CS
DQ
5
µPD4564323 for Rev. E
CONTENTS
1.
Input / Output Pin Function .............................................................................................................. 8
2.
Commands ......................................................................................................................................... 9
3.
Simplified State Diagram ................................................................................................................ 12
4.
Truth Table ....................................................................................................................................... 13
4.1 Command Truth Table............................................................................................................................. 13
4.2 DQM Truth Table ...................................................................................................................................... 13
4.3 CKE Truth Table....................................................................................................................................... 13
4.4 Operative Command Table .................................................................................................................... 14
4.5 Command Truth Table for CKE ............................................................................................................. 17
5.
Initialization ...................................................................................................................................... 18
6.
Programming the Mode Register ................................................................................................... 19
7.
Mode Register .................................................................................................................................. 20
7.1 Burst Length and Sequence .................................................................................................................. 21
8.
Address Bits of Bank-Select and Precharge ................................................................................ 22
9.
Precharge ......................................................................................................................................... 23
10. Auto Precharge ................................................................................................................................ 24
10.1
Read with Auto Precharge .................................................................................................................. 24
10.2
Write with Auto Precharge .................................................................................................................. 25
11. Read / Write Command Interval ..................................................................................................... 26
11.1
Read to Read Command Interval ........................................................................................................ 26
11.2
Write to Write Command Interval ....................................................................................................... 26
11.3
Write to Read Command Interval ........................................................................................................ 27
11.4
Read to Write Command Interval ........................................................................................................ 28
12. Burst Termination ........................................................................................................................... 29
6
12.1
Burst Stop Command .......................................................................................................................... 29
12.2
Precharge Termination ........................................................................................................................ 30
12.2.1
Precharge Termination in READ Cycle .................................................................................... 30
12.2.2
Precharge Termination in WRITE Cycle .................................................................................. 31
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
13. Electrical Specifications ................................................................................................................. 32
13.1
AC Parameters for Read Timing ......................................................................................................... 37
13.2
AC Parameters for Write Timing ......................................................................................................... 39
13.3
Relationship between Frequency and Latency ................................................................................. 40
13.4
Mode Register Set ................................................................................................................................ 41
13.5
Power on Sequence and CBR (Auto) Refresh ................................................................................... 42
13.6
/CS Function ......................................................................................................................................... 43
13.7
Clock Suspension during Burst Read (using CKE Function) .......................................................... 44
13.8
Clock Suspension during Burst Write (using CKE Function) .......................................................... 46
13.9
Power Down Mode and Clock Mask ................................................................................................... 48
13.10 CBR (Auto) Refresh ............................................................................................................................. 49
13.11 Self Refresh (Entry and Exit) ............................................................................................................... 50
13.12 Random Column Read (Page with Same Bank) ................................................................................ 51
13.13 Random Column Write (Page with Same Bank) ................................................................................ 53
13.14 Random Row Read (Ping-Pong Banks) ............................................................................................. 55
13.15 Random Row Write (Ping-Pong Banks) ............................................................................................. 57
13.16 Read and Write ..................................................................................................................................... 59
13.17 Interleaved Column Read Cycle ......................................................................................................... 61
13.18 Interleaved Column Write Cycle ......................................................................................................... 63
13.19 Auto Precharge after Read Burst ....................................................................................................... 65
13.20 Auto Precharge after Write Burst ....................................................................................................... 67
13.21 Full Page Read Cycle ........................................................................................................................... 69
13.22 Full Page Write Cycle ........................................................................................................................... 71
13.23 Byte Write Operation ........................................................................................................................... 73
13.24 Burst Read and Single Write (Option) ................................................................................................ 74
13.25 Full Page Random Column Read ........................................................................................................ 75
13.26 Full Page Random Column Write ....................................................................................................... 76
13.27 PRE (Precharge) Termination of Burst ............................................................................................... 77
14. Package Drawing ............................................................................................................................. 79
15. Recommended Soldering Condition ............................................................................................. 80
16. Revision History .............................................................................................................................. 80
Data Sheet M14376EJ2V0DS00
7
µPD4564323 for Rev. E
1. Input / Output Pin Function
Pin name
8
Input / Output
Function
CLK
Input
CLK is the master clock input. Other inputs signals are referenced to the CLK rising
edge.
CKE
Input
CKE determine validity of the next CLK (clock). If CKE is high, the next CLK rising
edge is valid; otherwise it is invalid. If the CLK rising edge is invalid, the internal clock
is not issued and the µPD4564323 suspends operation.
When the µPD4564323 is not in burst mode and CKE is negated, the device enters
power down mode. During power down mode, CKE must remain low.
/CS
Input
/CS low starts the command input cycle. When /CS is high, commands are ignored
but operations continue.
/RAS, /CAS, /WE
Input
/RAS, /CAS and /WE have the same symbols on conventional DRAM but different
functions. For details, refer to the command table.
A0 - A10
Input
Row Address is determined by A0 - A10 at the CLK (clock) rising edge in the active
command cycle.
Column Address is determined by A0 - A7 at the CLK rising edge in the read or write
command cycle.
A10 defines the precharge mode. When A10 is high in the precharge command cycle,
all banks are precharged; when A10 is low, only the bank selected by BA0 and BA1 is
precharged.
When A10 is high in read or write command cycle, the precharge starts automatically
after the burst access.
BA0, BA1
Input
BA0 and BA1 are the bank select signal. In command cycle, BA0 and BA1 low select
bank A, BA0 low and BA1 high select bank C, BA0 high and BA1 low select bank B
and then BA0 and BA1 high select bank D.
DQM0 - DQM3
Input
DQM controls I/O buffers. DQM0 controls DQ0 - DQ7, DQM1 controls DQ8 - DQ15,
DQM2 controls DQ16 - DQ23, DQM3 controls DQ24 - DQ31.
In read mode, DQM controls the output buffers like a conventional /OE pin.
DQM high and DQM low turn the output buffers off and on, respectively.
The DQM latency for the read is two clocks.
In write mode, DQM controls the word mask. Input data is written to the memory cell if
DQM is low but not if DQM is high.
The DQM latency for the write is zero.
DQ0 - DQ31
Input / Output
DQ pins have the same function as I/O pins on a conventional DRAM.
VCC, VSS, VCCQ,
VSSQ
(Power supply)
VCC and VSS are power supply pins for internal circuits. VCCQ and VSSQ are power
supply pins for the output buffers.
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
2. Commands
Mode register set command
Fig.1 Mode register set command
CLK
(/CS, /RAS, /CAS, /WE = Low)
CKE
The µPD4564323 has a mode register that defines how the device
/CS
operates. In this command, A0 through A10, BA0 and BA1 are the data input
/RAS
pins. After power on, the mode register set command must be executed to
/CAS
initialize the device.
H
/WE
The mode register can be set only when all banks are in idle state.
During 2 CLK (tRSC) following this command, the µPD4564323 cannot
accept any other commands.
BA0, BA1
(Bank select)
A10
Add
Activate command
Fig.2 Row address strobe and
bank activate command
(/CS, /RAS = Low, /CAS, /WE = High)
CLK
The µPD4564323 has four banks, each with 4,096 rows.
This command activates the bank selected by BA0 and BA1 and a row
address selected by A0 through A10.
CKE
H
/CS
/RAS
This command corresponds to a conventional DRAM’s /RAS falling.
/CAS
/WE
BA0, BA1
(Bank select)
Precharge command
A10
Row
Add
Row
Fig.3 Precharge command
CLK
(/CS, /RAS, /WE = Low, /CAS = High)
CKE
This command begins precharge operation of the bank selected by BA0 and
/CS
BA1. When A10 is High, all banks are precharged, regardless of BA0 and
/RAS
BA1.
/CAS
When A10 is Low, only the bank selected by BA0 and BA1 is
precharged.
H
/WE
After this command, the µPD4564323 can’t accept the activate command to
the precharging bank during tRP (precharge to activate command period).
This command corresponds to a conventional DRAM’s /RAS rising.
Data Sheet M14376EJ2V0DS00
BA0, BA1
(Bank select)
A10
(Precharge select)
Add
9
µPD4564323 for Rev. E
Write command
Fig.4 Column address and write
command
(/CS, /CAS, /WE = Low, /RAS = High)
CLK
If the mode register is in the burst write mode, this command sets the burst
CKE
start address given by the column address to begin the burst write operation.
/CS
The first write data in burst mode can input with this command with
/RAS
subsequent data on following clocks.
/CAS
H
/WE
BA0, BA1
(Bank select)
A10
Add
Read command
Col.
Fig.5 Column address and read
command
(/CS, /CAS = Low, /RAS, /WE = High)
CLK
Read data is available after /CAS latency requirements have been met.
This command sets the burst start address given by the column address.
CKE
H
/CS
/RAS
/CAS
/WE
BA0, BA1
(Bank select)
A10
Add
CBR (auto) refresh command
Fig.6 CBR (auto) refresh command
(/CS, /RAS, /CAS = Low, /WE, CKE = High)
CLK
CKE
This command is a request to begin the CBR (auto) refresh operation. The
refresh address is generated internally.
/CS
/RAS
Before executing CBR (auto) refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for
a row activate command.
/CAS
/WE
BA0, BA1
During tRC period (from refresh command to refresh or activate command),
the µPD4564323 cannot accept any other command.
10
Col.
Data Sheet M14376EJ2V0DS00
(Bank select)
A10
Add
H
µPD4564323 for Rev. E
Self refresh entry command
Fig.7 Self refresh entry command
CLK
(/CS, /RAS, /CAS, CKE = Low, /WE = High)
CKE
After the command execution, self refresh operation continues while CKE
/CS
remains low. When CKE goes high, the µPD4564323 exits the self refresh
/RAS
mode.
/CAS
During self refresh mode, refresh interval and refresh operation are
performed internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
/WE
BA0, BA1
(Bank select)
A10
Add
Burst stop command
Fig.8 Burst stop command in Full
Page Mode
(/CS, /WE = Low, /RAS, /CAS = High)
CLK
This command can stop the current burst operation.
CKE
H
/CS
/RAS
/CAS
/WE
BA0, BA1
(Bank select)
A10
Add
No operation
Fig.9 No operation
CLK
(/CS = Low, /RAS, /CAS, /WE = High)
CKE
This command is not an execution command.
No operations begin or
terminate by this command.
H
/CS
/RAS
/CAS
/WE
BA0, BA1
(Bank select)
A10
Add
Data Sheet M14376EJ2V0DS00
11
µPD4564323 for Rev. E
3. Simplified State Diagram
Self
Refresh
LF
SE
xit
Fe
L
SE
MRS
Mode
Register
Set
REF
IDLE
CBR(auto)
Refresh
CK
E
ACT
CK
E
Power
Down
CKE
ROW
ACTIVE
BS
T
wit
h
ch
arg
pre
ite
Wr
CKE
Read
ad
WRITE
CKE
CKE
WRITEA
CKE
Precharge
PR
E(
Pre
cha
rge
ter
min
atio
n)
Write
CKE
POWER
ON
Read
READ
n)
atio
min
ter
rge
cha
Pre
E(
PR
WRITEA
SUSPEND
Au
WRITE
SUSPEND
to
W
T
Re
h
wit e
ad
rg
Re cha
pre
to
PRE
Write
Au
e
rit
e
BS
Active
Power
Down
CKE
CKE
CKE
READA
CKE
READ
SUSPEND
READA
SUSPEND
Precharge
Automatic sequence
Manual input
12
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
4. Truth Table
4.1 Command Truth Table
Function
Symbol
CKE
/CS
n–1
n
/RAS
/CAS
/WE
BA0,
A10
A9 - A0
BA1
Device deselect
DESL
H
×
H
×
×
×
×
×
×
No operation
NOP
H
×
L
H
H
H
×
×
×
Burst stop
BST
H
×
L
H
H
L
×
×
×
Read
READ
H
×
L
H
L
H
V
L
V
Read with auto precharge
READA
H
×
L
H
L
H
V
H
V
Write
WRIT
H
×
L
H
L
L
V
L
V
Write with auto precharge
WRITA
H
×
L
H
L
L
V
H
V
Bank activate
ACT
H
×
L
L
H
H
V
V
V
Precharge select bank
PRE
H
×
L
L
H
L
V
L
×
Precharge all banks
PALL
H
×
L
L
H
L
×
H
×
Mode register set
MRS
H
×
L
L
L
L
L
L
V
Remark H = High level, L = Low level, × = High or Low level (Don't care), V = Valid data input
4.2 DQM Truth Table
Function
Symbol
CKE
DQM
n-1
n
0
1
2
3
Data write/output enable
ENB
H
×
L
Data mask/output disable
MASK
H
×
H
DQ0 - DQ7 write enable/output enable
ENB0
H
×
L
×
×
×
DQ8 - DQ15 write enable/output enable
ENB1
H
×
×
L
×
×
DQ16 - DQ23 write enable/output enable
ENB2
H
×
×
×
L
×
DQ24 - DQ31 write enable/output enable
ENB3
H
×
×
×
×
L
DQ0 - DQ7 write inhibit/output disable
MASK0
H
×
H
×
×
×
DQ8 - DQ15 write inhibit/output disable
MASK1
H
×
×
H
×
×
DQ16 - DQ23 write inhibit/output disable
MASK2
H
×
×
×
H
×
DQ24 - DQ31 write inhibit/output disable
MASK3
H
×
×
×
×
H
Remark H = High level, L = Low level, × = High or Low level (Don't care)
4.3 CKE Truth Table
Current state
Function
Symbol
CKE
n–1
/CS
/RAS
/CAS
/WE
Address
n
Activating
Clock suspend mode entry
H
L
×
×
×
×
×
Any
Clock suspend
L
L
×
×
×
×
×
Clock suspend
Clock suspend mode exit
L
H
×
×
×
×
×
Idle
CBR (auto) refresh command
REF
H
H
L
L
L
H
×
Idle
Self refresh entry
SELF
H
L
L
L
L
H
×
Self refresh
Self refresh exit
L
H
L
H
H
H
×
L
H
H
×
×
×
×
×
×
×
×
Idle
Power down entry
H
L
×
Power down
Power down exit
L
H
H
×
×
×
×
L
H
L
H
H
H
×
Remark H = High level, L = Low level, × = High or Low level (Don't care)
Data Sheet M14376EJ2V0DS00
13
µPD4564323 for Rev. E
4.4 Operative Command Table Note1
Current state
Idle
Row active
Read
Write
14
(1/3)
/CS /RAS /CAS /WE
Address
Command
Action
Notes
H
×
×
×
×
DESL
Nop or power down
2
L
H
H
×
×
NOP or BST
Nop or power down
2
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
Row activating
L
L
H
L
BA, A10
PRE/PALL
Nop
L
L
L
H
×
REF/SELF
CBR (auto) refresh or self refresh
4
L
L
L
L
Op-Code
MRS
Mode register accessing
H
×
×
×
×
DESL
Nop
L
H
H
×
×
NOP or BST
Nop
L
H
L
H
BA, CA, A10
READ/READA
Begin read : Determine AP
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write : Determine AP
5
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Precharge
6
L
L
L
H
×
REF/SELF
ILLEGAL
5
L
L
L
L
Op-Code
MRS
ILLEGAL
H
×
×
×
×
DESL
Continue burst to end → Row active
L
H
H
H
×
NOP
Continue burst to end → Row active
L
H
H
L
×
BST
Burst stop → Row active
L
H
L
H
BA, CA, A10
READ/READA
Terminate burst, new read : Determine AP
7
L
H
L
L
BA, CA, A10
WRIT/WRITA
Terminate burst, start write : Determine AP
7, 8
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE/PALL
Terminate burst, precharging
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
H
×
×
×
×
DESL
Continue burst to end → Write recovering
L
H
H
H
×
NOP
Continue burst to end → Write recovering
L
H
H
L
×
BST
Burst stop → Row active
L
H
L
H
BA, CA, A10
READ/READA
Terminate burst, start read : Determine AP
7, 8
L
H
L
L
BA, CA, A10
WRIT/WRITA
Terminate burst, new write : Determine AP
7
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Terminate burst, precharging
9
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Data Sheet M14376EJ2V0DS00
3
µPD4564323 for Rev. E
(2/3)
Current state
/CS /RAS /CAS /WE
Address
Command
Action
Notes
Read with auto
H
×
×
×
×
DESL
Continue burst to end → Precharging
precharge
L
H
H
H
×
NOP
Continue burst to end → Precharging
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
H
×
×
×
×
DESL
Continue burst to end → Write
recovering with auto precharge
L
H
H
H
×
NOP
Continue burst to end → Write
recovering with auto precharge
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
Write with auto
precharge
Precharging
Row activating
3
3
L
L
L
L
Op-Code
MRS
ILLEGAL
H
×
×
×
×
DESL
Nop → Enter idle after tRP
L
H
H
H
×
NOP
Nop → Enter idle after tRP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Nop → Enter idle after tRP
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
H
×
×
×
×
DESL
Nop → Enter bank active after tRCD
L
H
H
H
×
NOP
Nop → Enter bank active after tRCD
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3, 10
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Data Sheet M14376EJ2V0DS00
15
µPD4564323 for Rev. E
(3/3)
Current state
Write recovering
/CS /RAS /CAS /WE
Address
Command
Action
Notes
H
×
×
×
×
DESL
Nop → Enter row active after tDPL
L
H
H
H
×
NOP
Nop → Enter row active after tDPL
L
H
H
L
×
BST
Nop → Enter row active after tDPL
L
H
L
H
BA, CA, A10
READ/READA
Start read, Determine AP
L
H
L
L
BA, CA, A10
WRIT/WRITA
New write, Determine AP
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
8
L
L
L
L
Op-Code
MRS
ILLEGAL
Write recovering
H
×
×
×
×
DESL
Nop → Enter precharge after tDPL
with auto precharge
L
H
H
H
×
NOP
Nop → Enter precharge after tDPL
L
H
H
L
×
BST
Nop → Enter precharge after tDPL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3, 8
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
H
×
×
×
×
DESL
Nop → Enter idle after tRC
L
H
H
×
×
NOP/BST
Nop → Enter idle after tRC
L
H
L
×
×
READ/WRIT
ILLEGAL
L
L
H
×
×
ACT/PRE/PALL
ILLEGAL
L
L
L
×
×
REF/SELF/MRS
ILLEGAL
Mode register
H
×
×
×
×
DESL
Nop → Enter idle after tRSC
accessing
L
H
H
H
×
NOP
Nop → Enter idle after tRSC
L
H
H
L
×
BST
ILLEGAL
L
H
L
×
×
READ/WRIT
ILLEGAL
L
L
×
×
×
ACT/PRE/PALL/
ILLEGAL
Refreshing
REF/SELF/MRS
Notes 1.
2.
All entries assume that CKE was active (High level) during the preceding clock cycle.
If all banks are idle, and CKE is inactive (Low level), µPD4564323 will enter Power down mode.
All input buffers except CKE will be disabled.
3.
Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA),
depending on the state of that bank.
4.
If all banks are idle, and CKE is inactive (Low level), µPD4564323 will enter Self refresh mode. All input
buffers except CKE will be disabled.
5.
Illegal if tRCD is not satisfied.
6.
Illegal if tRAS is not satisfied.
7.
Must satisfy burst interrupt condition.
8.
Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9.
Must mask preceding data which don't satisfy tDPL.
10. Illegal if tRRD is not satisfied.
Remark H = High level, L = Low level, × = High or Low level (Don’t care), V = Valid data
16
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
4.5 Command Truth Table for CKE
Current State
CKE
n–1
Self refresh
Self refresh recovery
/CS /RAS /CAS /WE
Address
Action
n
H
×
×
×
×
×
×
INVALID, CLK (n-1) would exit self refresh
L
H
H
×
×
×
×
Self refresh recovery
L
H
L
H
H
×
×
Self refresh recovery
L
H
L
H
L
×
×
ILLEGAL
L
H
L
L
×
×
×
ILLEGAL
L
L
×
×
×
×
×
Maintain self refresh
H
H
H
×
×
×
×
Idle after tRC
H
H
L
H
H
×
×
Idle after tRC
H
H
L
H
L
×
×
ILLEGAL
H
H
L
L
×
×
×
ILLEGAL
H
L
H
×
×
×
×
ILLEGAL
H
L
L
H
H
×
×
ILLEGAL
H
L
L
H
L
×
×
ILLEGAL
×
ILLEGAL
H
L
L
L
×
×
H
×
×
×
×
×
L
H
H
×
×
×
×
L
H
L
H
H
H
×
L
L
×
×
×
×
×
H
H
H
×
×
×
Refer to operations in Operative Command Table
H
H
L
H
×
×
Refer to operations in Operative Command Table
H
H
L
L
H
×
Refer to operations in Operative Command Table
H
H
L
L
L
H
×
CBR (auto) refresh
H
H
L
L
L
L
Op-Code
Refer to operations in Operative Command Table
H
L
H
×
×
×
Refer to operations in Operative Command Table
H
L
L
H
×
×
Refer to operations in Operative Command Table
H
L
L
L
H
×
H
L
L
L
L
H
×
Self refresh
H
L
L
L
L
L
Op-Code
Refer to operations in Operative Command Table
L
×
×
×
×
×
×
Power down
H
×
×
×
×
×
×
Refer to operations in Operative Command Table
L
×
×
×
×
×
×
Power down
Any state other than
H
H
×
×
×
×
listed above
H
L
×
×
×
×
×
Begin clock suspend next cycle
L
H
×
×
×
×
×
Exit clock suspend next cycle
L
L
×
×
×
×
×
Maintain clock suspend
Power down
All banks idle
Row active
Notes
INVALID, CLK (n – 1) would exit power down
EXIT power down → Idle
Maintain power down mode
Refer to operations in Operative Command Table
1
1
1
Refer to operations in Operative Command Table
2
Notes 1. Self refresh can be entered only from the all banks idle state. Power down can be entered only from all
banks idle or row active state.
2. Must be legal command as defined in Operative Command Table.
Remark H = High level, L = Low level, × = High or Low level (Don't care)
Data Sheet M14376EJ2V0DS00
17
µPD4564323 for Rev. E
5. Initialization
The synchronous DRAM is initialized in the power-on sequence according to the following.
(1)
To stabilize internal circuits, when power is applied, a 100 µs or longer pause must precede any signal toggling.
(2)
After the pause, all banks must be precharged using the Precharge command (The Precharge all banks
command is convenient).
(3)
Once the precharge is completed and the minimum tRP is satisfied, the mode register can be programmed. After
the mode register set cycle, tRSC (2 CLK minimum) pause must be satisfied as well.
(4)
Two or more CBR (Auto) refresh must be performed.
Remarks 1. The sequence of Mode register programming and Refresh above may be transposed.
2. CKE and DQM must be held high until the Precharge command is issued to ensure data-bus Hi-Z.
18
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
6. Programming the Mode Register
The mode register is programmed by the Mode register set command using address bits A10 through A0, BA0 and
BA1 as data inputs. The register retains data until it is reprogrammed or the device loses power.
The mode register has four fields;
Options
: A10 through A7, BA0, BA1
/CAS latency : A6 through A4
Wrap type
: A3
Burst length
: A2 through A0
Following mode register programming, no command can be issued before at least 2 CLK have elapsed.
/CAS Latency
/CAS latency is the most critical of the parameters being set. It tells the device how many clocks must elapse
before the data will be available.
The value is determined by the frequency of the clock and the speed grade of the device. 13.3 Relationship
between Frequency and Latency shows the relationship of /CAS latency to the clock period and the speed grade of
the device.
Burst Length
Burst Length is the number of words that will be output or input in a read or write cycle. After a read burst is
completed, the output bus will become Hi-Z.
The burst length is programmable as 1, 2, 4, 8 or full page.
Wrap Type (Burst Sequence)
The wrap type specifies the order in which the burst data will be addressed. This order is programmable as either
“Sequential” or “Interleave”. The method chosen will depend on the type of CPU in the system.
Some microprocessor cache systems are optimized for sequential addressing and others for interleaved
addressing. 7.1 Burst Length and Sequence shows the addressing sequence for each burst length using them.
Both sequences support bursts of 1, 2, 4 and 8. Additionally, sequence supports the full page length.
Data Sheet M14376EJ2V0DS00
19
µPD4564323 for Rev. E
7. Mode Register
BA1 BA0
0
0
BA1 BA0
x
x
BA1 BA0
BA1 BA0
x
x
BA1 BA0
0
0
A10
A9
A8
A7
0
0
0
1
A10
A9
A8
A7
x
1
0
0
A10
A9
A8
A7
1
0
A6
A5
A4
A3
A2
A1
A0
JEDEC Standard Test Set (refresh counter test)
A6
A5
A4
LTMODE
A6
A5
A3
A2
WT
A4
A3
A1
A0
BL
A2
A1
Burst Read and Single Write
(for Write Through Cache)
A0
Use in future
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
x
x
1
1
V
V
V
V
V
V
V
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
0
0
LTMODE
WT
Vender Specific
V = Valid
x = Don’ t care
BL
Mode Register Set
Burst length
Wrap type
Bits2-0
000
001
010
011
100
101
110
111
0
1
Latency
mode
WT = 0
1
2
4
8
R
R
R
Full page
Sequential
Interleave
Bits6-4
000
001
010
011
100
101
110
111
Remark R : Reserved
Mode Register Set Timing
CLK
CKE
/CS
/RAS
/CAS
/WE
A0 - A10,
BA0, BA1
Mode Register Set
20
Data Sheet M14376EJ2V0DS00
/CAS latency
R
R
2
3
R
R
R
R
WT = 1
1
2
4
8
R
R
R
R
µPD4564323 for Rev. E
7.1 Burst Length and Sequence
[Burst of Two]
Starting address
(column address A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
0
0, 1
0, 1
1
1, 0
1, 0
Starting address
(column address A1 - A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
00
0, 1, 2, 3
0, 1, 2, 3
01
1, 2, 3, 0
1, 0, 3, 2
10
2, 3, 0, 1
2, 3, 0, 1
11
3, 0, 1, 2
3, 2, 1, 0
Starting address
(column address A2 - A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
[Burst of Four]
[Burst of Eight]
Full page burst is an extension of the above tables of sequential addressing, with the length being 256.
Data Sheet M14376EJ2V0DS00
21
µPD4564323 for Rev. E
8. Address Bits of Bank-Select and Precharge
Row
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
BA0 BA1
(Activate command)
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
BA0
BA1
BA0
Result
Select Bank A
“Activate” command
Select Bank B
“Activate” command
0
0
0
1
1
0
Select Bank C
“Activate” command
1
1
Select Bank D
“Activate” command
BA1
A10
0
0
0
0
1
(Precharge command)
BA1 BA0
0
0
1
0
0
1
1
1
x
x
Result
Precharge Bank A
Precharge Bank B
Precharge Bank C
Precharge Bank D
Precharge All Banks
x : Don’t care
0
Col.
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10 BA0
BA1
1
disables Auto-Precharge
(End of Burst)
enables Auto-Precharge
(End of Burst)
(/CAS strobes)
BA1
22
Data Sheet M14376EJ2V0DS00
BA0
Result
enables Read/Write
commands for Bank A
enables Read/Write
commands for Bank B
0
0
0
1
1
0
enables Read/Write
commands for Bank C
1
1
enables Read/Write
commands for Bank D
µPD4564323 for Rev. E
9. Precharge
The precharge command can be issued anytime after tRAS (MIN.) is satisfied.
Soon after the precharge command is issued, precharge operation performed and the synchronous DRAM enters
the idle state after tRP is satisfied. The parameter tRP is the time required to perform the precharge.
The earliest timing in a read cycle that a precharge command can be issued without losing any data in the burst is
as follows.
It is depending on the /CAS latency and clock cycle time.
Burst length=4
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
/CAS latency = 2
Command
PRE
Read
Q1
DQ
Q2
Q3
Hi-Z
Q4
/CAS latency = 3
Command
Read
PRE
DQ
Q1
Q2
Q3
Hi-Z
Q4
(tRAS must be satisfied)
In order to write all data to the memory cell correctly, the asynchronous parameter “t DPL” must be satisfied. The
tDPL(MIN.) specification defines the earliest time that a precharge command can be issued. Minimum number of clocks
is calculated by dividing tDPL(MIN.) with clock cycle time.
In summary, the precharge command can be issued relative to reference clock that indicates the last data word is
valid. In the following table, minus means clocks before the reference; plus means time after the reference.
/CAS latency
Read
Write
2
–1
+tDPL (MIN.)
3
–2
+tDPL (MIN.)
Data Sheet M14376EJ2V0DS00
23
µPD4564323 for Rev. E
10. Auto Precharge
During a read or write command cycle, A10 controls whether auto precharge is selected. A10 high in the Read or
Write command (Read with Auto precharge command or Write with Auto precharge command), auto precharge is
selected and begins automatically.
The tRAS must be satisfied with a read with auto precharge or a write with auto precharge operation. In addition, the
next activate command to the bank being precharged cannot be executed until the precharge cycle ends.
In read cycle, once auto precharge has started, an activate command to the bank can be issued after tRP has been
satisfied.
In write cycle, the tDAL must be satisfied to issue the next activate command to the bank being precharged.
The timing that begins the auto precharge cycle depends on both the /CAS latency programmed into the mode
register and whether read or write cycle.
10.1 Read with Auto Precharge
During a read cycle, the auto precharge begins one clock earlier (/CAS latency of 2) or two clocks earlier (/CAS
latency of 3) the last data word output.
Burst length = 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
CLK
/CAS latency = 2
Command
Auto precharge starts
READA B
Hi-Z
DQ
QB1
QB2
QB3
QB4
/CAS latency = 3
Command
Auto precharge starts
READA B
Hi-Z
QB1
DQ
QB2
QB3
QB4
(tRAS must be satisfied)
Remark READA means Read with Auto precharge
24
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
10.2 Write with Auto Precharge
During a write cycle, the auto precharge starts at the timing that is equal to the value of the tDPL (MIN.) after the last
data word input to the device.
Burst length = 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
/CAS latency = 2
Auto precharge starts
WRITA B
Command
Hi-Z
DB1
DQ
DB2
DB3
DB4
tDPL(MIN.)
/CAS latency = 3
Command
Auto precharge starts
WRITA B
Hi-Z
DQ
DB1
DB2
DB3
DB4
tDPL(MIN.)
(tRAS must be satisfied)
Remark WRITA means Write with Auto Precharge
In summary, the auto precharge begins relative to a reference clock that indicates the last data word is valid.
In the table below, minus means clocks before the reference; plus means after the reference.
/CAS latency
Read
Write
2
–1
+tDPL (MIN.)
3
–2
+tDPL (MIN.)
Data Sheet M14376EJ2V0DS00
25
µPD4564323 for Rev. E
11. Read / Write Command Interval
11.1 Read to Read Command Interval
During a read cycle, when new Read command is issued, it will be effective after /CAS latency, even if the previous
read operation does not completed. READ will be interrupted by another READ.
The interval between the commands is 1 cycle minimum. Each Read command can be issued in every clock
without any restriction.
Burst length = 4, /CAS latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
QA1
QB1
QB2
QB3
QB4
T8
T9
CLK
Command
Read A
Read B
Hi-Z
DQ
1cycle
11.2 Write to Write Command Interval
During a write cycle, when a new Write command is issued, the previous burst will terminate and the new burst will
begin with a new Write command. WRITE will be interrupted by another WRITE.
The interval between the commands is minimum 1 cycle. Each Write command can be issued in every clock
without any restriction.
Burst length = 4, /CAS latency = 2
T0
T1
T2
T3
T4
T5
DB2
DB3
DB4
T6
CLK
Command
Write A
Write B
DA1
DB1
Hi-Z
DQ
1cycle
26
Data Sheet M14376EJ2V0DS00
T7
T8
µPD4564323 for Rev. E
11.3 Write to Read Command Interval
Write command and Read command interval is also 1 cycle.
Only the write data before Read command will be written.
The data bus must be Hi-Z at least one cycle prior to the first D OUT.
Burst length = 4
T0
T1
T2
T3
T4
T5
T6
T7
QB1
QB2
QB3
QB4
QB1
QB2
QB3
T8
CLK
/CAS latency = 2
Command
Write A
Read B
Hi-Z
DQ
DA1
/CAS latency = 3
Command
Write A
Read B
Hi-Z
DQ
DA1
Data Sheet M14376EJ2V0DS00
QB4
27
µPD4564323 for Rev. E
11.4 Read to Write Command Interval
During a read cycle, READ can be interrupted by WRITE.
The Read and Write command interval is 1 cycle minimum. There is a restriction to avoid data conflict. The Data
bus must be Hi-Z using DQM before WRITE.
Burst length = 4
T0
T1
T2
Read
Write
T3
T4
T5
D2
D3
D4
T6
T7
T8
CLK
Command
DQM
Hi-Z
D1
DQ
1cycle
READ can be interrupted by WRITE. DQM must be High at least 3 clocks prior to the Write command.
Burst length = 8
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
D2
D3
D2
D3
CLK
/CAS latency = 2
Command
Read
Write
DQM
Q1
DQ
Q2
Q3
D1
Hi-Z is
necessary
/CAS latency = 3
Command
Read
Write
DQM
DQ
Q1
Q2
D1
Hi-Z is
necessary
28
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
12. Burst Termination
There are two methods to terminate a burst operation other than using a Read or a Write command. One is the
burst stop command and the other is the precharge command.
12.1 Burst Stop Command
During a read cycle, when the burst stop command is issued, the burst read data are terminated and the data bus
goes to Hi-Z after the /CAS latency from the burst stop command.
Burst length = X
T0
T1
T2
T3
T4
T5
T6
T7
CLK
Command
Read
BST
/CAS latency = 2
Hi-Z
DQ
Q1
Q2
Q3
Q1
Q2
/CAS latency = 3
Hi-Z
DQ
Q3
Remark BST: Burst stop command
During a write cycle, when the burst stop command is issued, the burst write data are terminated and data bus goes
to Hi-Z at the same clock with the burst stop command.
Burst length = X
T0
T1
T2
T3
T4
T5
T6
T7
CLK
Command
Write
BST
/CAS latency = 2, 3
DQ
Hi-Z
D1
D2
D3
D4
Remark BST: Burst stop command
Data Sheet M14376EJ2V0DS00
29
µPD4564323 for Rev. E
12.2 Precharge Termination
12.2.1 Precharge Termination in READ Cycle
During a read cycle, the burst read operation is terminated by a precharge command.
When the precharge command is issued, the burst read operation is terminated and precharge starts.
The same bank can be activated again after tRP from the precharge command.
To issue a precharge command, tRAS must be satisfied.
When /CAS latency is 2, the read data will remain valid until one clock after the precharge command.
Burst length = X, /CAS latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
CLK
Read
Command
PRE
ACT
Hi-Z
DQ
Q1
Q2
Q3
Q4
tRP
(tRAS must be satisfied)
When /CAS latency is 3, the read data will remain valid until two clocks after the precharge command.
Burst length = X, /CAS latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command
Read
PRE
ACT
Hi-Z
DQ
Q1
Q2
Q3
Q4
tRP
(tRAS must be satisfied)
30
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
12.2.2 Precharge Termination in WRITE Cycle
During a write cycle, the burst write operation is terminated by a precharge command.
When the precharge command is issued, the burst write operation is terminated and precharge starts.
The same bank can be activated again after tRP from the precharge command.
To issue a precharge command, tRAS must be satisfied.
When /CAS latency is 2, the write data written prior to the precharge command will be correctly stored. However,
invalid data may be written at the same clock as the precharge command. To prevent this from happening, DQM
must be high at the same clock as the precharge command. This will mask the invalid data.
Burst length = X, /CAS latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
CLK
Write
Command
PRE
ACT
DQM
Hi-Z
DQ
D1
D2
D3
D4
D5
tRP
(tRAS must be satisfied)
When /CAS latency is 3, the write data written prior to the precharge command will be correctly stored. However,
invalid data may be written at the same clock as the precharge command. To prevent this from happening, DQM
must be high at the same clock as the precharge command. This will mask the invalid data.
Burst length = X, /CAS latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command
Write
PRE
ACT
DQM
Hi-Z
DQ
D1
D2
D3
D4
D5
tRP
(tRAS must be satisfied)
Data Sheet M14376EJ2V0DS00
31
µPD4564323 for Rev. E
13. Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute Power on sequence and CBR (auto) Refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
VCC, VCCQ
−0.5 to +4.6
V
Voltage on input pin relative to GND
VT
−0.5 to +4.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
1
W
Operating ambient temperature
TA
0 to 70
°C
Storage temperature
Tstg
−55 to + 125
°C
Voltage on power supply pin relative to GND
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
Symbol
Condition
VCC, VCCQ
High level input voltage
VIH
MIN.
TYP.
MAX.
3.0
3.3
3.6
VCC + 0.3
2.0
Low level input voltage
VIL
−0.3
Operating ambient temperature
TA
0
Note 2
Unit
V
Note1
V
+0.8
V
70
°C
Notes 1. VIH(MAX.) = VCC + 1.5 V (Pulse width ≤ 5ns)
2. VIL(MIN.) = –1.5 V (Pulse width ≤ 5ns)
Pin Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Input capacitance
Symbol
Condition
MIN.
TYP.
MAX.
Unit
pF
CI1
A0 - A10, BA0, BA1
2.5
4
CI2
CLK, CKE, /CS, /RAS, /CAS,
2.5
4
4
6.5
/WE, DQM0 - DQM3
Data input / output capacitance
32
CI/O
DQ0 - DQ31
Data Sheet M14376EJ2V0DS00
pF
µPD4564323 for Rev. E
DC Characteristics 1 (Recommended Operating Conditions unless otherwise noted)
Parameter
Operating current
ICC1
/CAS
Grade
latency
Maximum
Unit
Notes
-A60
150
mA
1
tRC ≥ tRC(MIN.),
-A70
140
IO = 0 mA,
-A80
130
-A10
130
Symbol
Test conditions
Burst length = 1,
CL=2
One bank active
CL=3
Precharge standby current
in power down mode
Precharge standby current in
non power down mode
ICC2P
ICC2PS
ICC2N
ICC2NS
Active standby current in
power down mode
Active standby current in
non power down mode
ICC3P
ICC3PS
ICC3N
ICC3NS
Operating current
ICC4
(Burst mode)
ICC5
Self refresh current
ICC6
160
-A70
150
-A80
140
-A10
140
-A10B
130
CKE ≤ VIL(MAX.), tCK = 15 ns
1
1
CKE ≥ VIH(MIN.), tCK = 15 ns, CS ≥ VIH(MIN.),
Input signals are changed one time during 30 ns
20
CKE ≥ VIH(MIN.), tCK = ∞,
Input signals are stable.
6
CKE ≤ VIL(MAX.), tCK = 15 ns
5
CKE ≤ VIL(MAX.), tCK = ∞
4
CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.) ,
Input signals are changed one time during 30 ns.
30
CKE ≥ VIH(MIN.), tCK = ∞, Input signals are stable.
tCK ≥ tCK(MIN.),
CL=2
170
IO = 0 mA,
-A70
170
-A80
170
tRC ≥ tRC(MIN.)
CL=2
CKE ≤ 0.2 V
mA
mA
mA
mA
20
-A60
All banks active
CL=3
★
120
-A60
CKE ≤ VIL(MAX.), tCK = ∞
CL=3
CBR (auto) refresh current
-A10B
-A10
140
-A10B
130
-A60
240
-A70
220
-A80
190
-A10
180
-A10B
160
-A60
160
-A70
150
-A80
150
-A10
150
-A10B
130
-A60
170
-A70
160
-A80
160
-A10
160
-A10B
140
1
mA
2
mA
3
mA
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK(MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK(MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK(MIN.).
Data Sheet M14376EJ2V0DS00
33
µPD4564323 for Rev. E
DC Characteristics 2 (Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input leakage current
II(L)
0 ≤ VI ≤ VCCQ, VCCQ = VCC,
All other pins not under test = 0 V
–1.0
+1.0
µA
Output leakage current
IO(L)
0 ≤ VO ≤ VCCQ, DOUT is disabled
–1.5
+1.5
µA
High level output voltage
VOH
IO =
2.4
Low level output voltage
VOL
IO = + 4 mA
– 4 mA
Notes
V
0.4
V
AC Characteristics (Recommended Operating Conditions unless otherwise noted)
★
Test Conditions
Parameter
AC high level input voltage / low level input voltage
Input timing measurement reference level
Value
Unit
2.4 / 0.4
V
1.4
V
1
ns
1.4
V
Transition time (Input rise and fall time)
Output timing measurement reference level
tCK
tCH
CLK
2.4 V
1.4 V
0.4 V
tSETUP tHOLD
Input
2.4 V
1.4 V
0.4 V
tAC
tOH
Output
34
Data Sheet M14376EJ2V0DS00
tCL
Notes
µPD4564323 for Rev. E
Synchronous Characteristics
Parameter
-A 60
/CAS Symbol
latency
Clock cycle time
Access time from CLK
-A70
-A80
-A 10
-A 10B
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Unit Note
CL = 3
tCK3
6
(166MHz)
7
(143MHz)
8
(125MHz)
10
(100MHz)
10
(100MHz)
ns
CL = 2
tCK2
10
(100MHz)
10
(100MHz)
10
(100MHz)
13
(77 MHz)
15
(67 MHz)
ns
CL = 3
tAC3
5.5
5.5
6
6
7
ns
1
CL = 2
tAC2
6
6
6
7
8
ns
1
CLK high level width
tCH
2
2
3
3
3.5
ns
CLK low level width
tCL
2
2
3
3
3.5
ns
Data-out hold time
tOH
2.5
2.5
3
3
3
ns
Data-out low-impedance time
tLZ
0
0
0
0
0
ns
Data-out high-impedance
CL = 3
tHZ3
2.5
5.5
2.5
5.5
3
6
3
6
3
7
ns
time
CL = 2
tHZ2
2.5
6
2.5
6
3
6
3
7
3
8
ns
Data-in setup time
tDS
1.5
1.5
2
2
2.5
ns
Data-in hold time
tDH
0.8
0.8
1
1
1
ns
Address setup time
tAS
1.5
1.5
2
2
2.5
ns
Address hold time
tAH
0.8
0.8
1
1
1
ns
CKE setup time
tCKS
2
2
2
2
2.5
ns
CKE hold time
tCKH
1
1
1
1
1
ns
CKE setup time (Power down exit)
tCKSP
2
2
2
2
2.5
ns
Command (/CS, /RAS, /CAS,
/WE, DQM) setup time
tCMS
1.5
1.5
2
2
2.5
ns
Command (/CS, /RAS, /CAS,
/WE, DQM) hold time
tCMH
0.8
0.8
1
1
1
ns
1
Note 1. Output load
1.4 V
Z = 50 Ω
50 Ω
Output
50 pF
Data Sheet M14376EJ2V0DS00
35
µPD4564323 for Rev. E
Asynchronous Characteristics
Parameter
-A60
/CAS Symbol
MIN.
latency
MAX.
-A70
MIN.
MAX.
-A80
MIN.
MAX.
-A 10
MIN.
MAX.
-A10B
MIN.
Unit Note
MAX.
REF to REF/ACT command
period (Operation)
tRC
60
63
70
70
90
ns
REF to REF/ACT command
period (Refresh)
tRC1
66
70
70
70
90
ns
ACT to PRE command period
tRAS
42
PRE to ACT command period
tRP
18
20
20
20
30
ns
Delay time ACT to READ/WRITE
command
tRCD
18
20
20
20
30
ns
ACT(one) to ACT(another)
command period
tRRD
12
14
16
20
20
ns
Data-in to PRE command period
tDPL
8
8
8
10
10
ns
Data-in to ACT(REF) command CL = 3
tDAL3 2CLK+18
2CLK+20
1CLK+20
1CLK+20
1CLK+30
ns
CL = 2 tDAL2 1CLK+18
1CLK+20
1CLK+20
1CLK+20
1CLK+30
ns
2
2
2
2
CLK
period (Auto precharge)
Mode register set cycle time
Transition time
Refresh time (4,096 refresh cycles)
36
tRSC
2
tT
0.5
tREF
120,000
30
64
42
0.5
120,000
30
48
0.5
64
Data Sheet M14376EJ2V0DS00
120,000
30
64
50
1
120,000
30
64
60
1
120,000
ns
30
ns
64
ms
13.1 AC Parameters for Read Timing (Manual Precharge, Burst Length = 4, /CAS Latency = 3)
,,
,,
,,,,
,,
,,
,,
,,
,
,,
,
,
,,
,
,,
,,
,
,,
,
,
,,
,
,,
,,
,
,,
,
,
,,
,
,
,,
,,
,,
,
,,
,
,
,
,
,,
,
,,
,
,
,
,
,,
,
,,
,
,
,
,
,,
,
,,
,
,
,,
,
,
,,
,
,,
,
,
,,
,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,,
,,
,,
,
,
,,
,
T0
tCK
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
tCH
tCL
CKE
tCKH
tCKS
tCMS tCMH
/CS
/RAS
/CAS
BA0
BA1
A10
ADD
tAS tAH
DQM
L
tAC
DQ
tAC
tAC
tAC
tHZ
Hi-Z
tLZ
tRCD
tOH
tOH
tRAS
tOH
tOH
tRP
tRC
Activate
Command
for Bank A
Read
Command
for Bank A
Precharge
Command
for Bank A
Activate
Command
for Bank A
37
µPD4564323 for Rev. E
,
,
,
,
,
,
,,
Data Sheet M14376EJ2V0DS00
/WE
38
AC Parameters for Read Timing (Auto Precharge, Burst Length = 4, /CAS Latency = 3)
T0
tCK
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
,,,,,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,,
,
,
,
,
tCH
tCL
CKE
tCKS
Auto Precharge
Start for Bank C
tCMS tCMH
tCKH
/CS
/RAS
/CAS
BA0
BA1
A10
ADD
tAS tAH
L
tAC
DQ
tAC
tAC
tAC
tHZ
Hi-Z
tRCD
tLZ
tOH
tOH
tOH
tOH
tRAS
tRRD
tRC
Activate
Command
for Bank C
Read with
Auto Precharge
Command
for Bank C
Activate
Command
for Bank D
Activate
Command
for Bank C
µPD4564323 for Rev. E
DQM
,
,
,
,
,
Data Sheet M14376EJ2V0DS00
/WE
13.2 AC Parameters for Write Timing (Burst Length = 4, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,,
,
,
,
,
,
,
,
,,,,,,
,,,,,,,,
,,,, ,,,,
,,,,,,,,,,
CKE
Auto Precharge
Start for Bank C
tCKS
tCMS tCMH
tCKH
,, ,, ,,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
ADD
tAS tAH
L
tDS tDH
DQ
Hi-Z
tRCD
tDAL
tRC
tRRD
tRCD
tDPL
tRP
tRAS
tRC
39
Activate
Command
for Bank C
Write with
Activate
Auto Precharge Command
Command
for Bank B
for Bank C
Write
Command
for Bank B
Activate Precharge
Command Command
for Bank C for Bank B
Activate
Command
for Bank B
µPD4564323 for Rev. E
DQM
µPD4564323 for Rev. E
13.3 Relationship between Frequency and Latency
Speed version
Clock cycle time [ns]
-A60
-A70
-A80
-A10
-A10B
6
10
7
10
8
10
10
13
10
15
166
100
143
100
125
100
100
77
100
67
/CAS latency
3
2
3
2
3
2
3
2
3
2
[tRCD]
3
2
3
2
3
2
2
2
3
2
/RAS latency (/CAS latency + [tRCD])
6
4
6
4
6
4
5
4
6
4
[tRC]
10
6
9
7
9
7
7
6
9
6
[tRC1]
11
7
10
7
9
7
7
6
9
6
[tRAS]
7
5
6
5
6
5
5
4
6
4
[tRRD]
2
2
2
2
2
2
2
2
2
2
[tRP]
3
2
3
2
3
2
2
2
3
2
[tDPL]
2
1
2
1
1
1
1
1
1
1
[tDAL]
5
3
5
3
4
3
3
3
4
3
[tRSC]
2
2
2
2
2
2
2
2
2
2
Frequency [MHz]
40
Data Sheet M14376EJ2V0DS00
13.4 Mode Register Set (Burst Length = 4, /CAS Latency = 2)
tRSC
H
CKE
DQ
Hi-Z
Mode
Register Set
Command
41
tRP
Activate
Command
is valid
µPD4564323 for Rev. E
,,,
,,,
,,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,,
,,
,,
,
,,,
,
,
,,,
,
,,
,,
,
,,
,
,,,
,,
,
,,
,,
,
,,
,
,,,
,
,,
,,
,
,,
,
/WE
BA0
BA1
Data Sheet M14376EJ2V0DS00
DQM
Precharge
All Banks
Command
T21
T20
T19
T18
T17
T16
T15
T14
T13
T12
T11
T10
T9
T8
T7
T6
T5
T4
T3
T2
T1
T0
CLK
2 CLK (MIN.)
/CS
/RAS
/CAS
A10
ADDRESS KEY
ADD
42
13.5 Power On Sequence and CBR (Auto) Refresh
CLK
Clock signal is necessary
CKE
tRSC
2 refresh cycles are necessary
,,
,,,,
,,
,,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,,
,
,
,
,,
,
,
,,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,,
,
,
,
,,
,
,
,
,,
,,
,,
,
,
,,
,
,,
,,
,
,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
High level is necessary
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
ADDRESS KEY
ADD
High level is necessary
Hi-Z
DQ
Precharge
All Banks
Command
is necessary
Mode
Register Set
Command
is necessary
tRP
CBR(Auto)
Refresh
Command
is necessary
CBR (Auto) refresh
Command
is necessary
tRC1
Activate
Command
tRC1
µPD4564323 for Rev. E
DQM
13.6 /CS Function (at 100 MHz, Burst Length = 4, /CAS Latency = 3)
Only /CS signal needs to be issued at minimum rate
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
H
/CS
/RAS
Data Sheet M14376EJ2V0DS00
/CAS
/WE
BA0
L
BA1
L
A10
RAa
ADD
RAa
CAb
L
Hi-Z
QAa1
DQ
Activate
Command
for Bank A
Read
Command
for Bank A
QAa2 QAa3
QAa4
DAb1
Write
Command
for Bank A
DAb2
DAb3
DAb4
Precharge
Command
for Bank A
43
µPD4564323 for Rev. E
DQM
CAa
44
13.7 Clock Suspension during Burst Read (using CKE Function) (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
,,,
,,
,,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,
,
,
,,
,
,
,,
,
,,
,,
,
,,
,,
,
,,
,
,,
,
,
,,
,,
,
,
,,
,
,,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
L
Hi-Z
QAa1
DQ
Activate
Command
for Bank A
Read
Command
for Bank A
QAa2
QAa3
1-CLOCK
SUSPENDED
QAa4
2-CLOCK
SUSPENDED
3-CLOCK
Hi-Z (turn off)
SUSPENDED at the end of burst
µPD4564323 for Rev. E
DQM
CAa
Clock Suspension during Burst Read (using CKE Function) (2/2) (Burst Length = 4, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
,,,
,,,,,,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,
,,
,,
,,
,
,,
,
,,
,,
,,
,
,,,
,
,,,
,
,
,,
,,
,,
,
,
,,
,,
,
,,
,,,
,
,,,
,
,,
,,
,
,,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
L
Hi-Z
QAa1
DQ
Activate
Command
for Bank A
Read
Command
for Bank A
QAa2
1-CLOCK
SUSPENDED
QAa3
QAa4
2-CLOCK
SUSPENDED
3-CLOCK
SUSPENDED
Hi-Z (turn off)
at the end of burst
45
µPD4564323 for Rev. E
DQM
CAa
46
13.8 Clock Suspension during Burst Write (using CKE Function) (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
,,,,,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
L
Hi-Z
Activate
Command
for Bank A
DAa1
DAa2
Write
1-CLOCK
Command SUSPENDED
for Bank A
DAa3
2-CLOCK
SUSPENDED
DAa4
3-CLOCK
SUSPENDED
µPD4564323 for Rev. E
DQM
CAa
Clock Suspension during Burst Write (using CKE Function) (2/2) (Burst Length = 4, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
,,,,
,,,,,
,,,
,,
,
,,
,,
,
,,,
,,
,
,,
,,
,
,,,
,,
,
,,
,,
,
,,,
,,
,
,,
,,
,
,,,
,,
,
,,
,,
,
,,,
,,
,
,,
,,
,
,,,
,,
,
,,
,,
,
,,
,,,
,,
,
,,
,,
,
,,
,,,
,,
,
,,
,,
,
,,
,,,
,,
,
,,
,,
,
,,
,,,
,,
,
,,
,,
,
,,
,,
,,,
,,
,
,,
,,
,
,,,
,
,
,,
,,
,,
,,
,
,,
,,
,,
,,
,
,,,
,
,
,,
,,,
,
,
,,
,,
,,
,
,,
,,
,
,,
,,,
,
,
,,,
,,
,
,,
,
,,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
L
Hi-Z
DQ
DAa1
Activate
Command
for Bank A
DAa2
Write
1-CLOCK
Command SUSPENDED
for Bank A
DAa3
2-CLOCK
SUSPENDED
DAa4
3-CLOCK
SUSPENDED
47
µPD4564323 for Rev. E
DQM
CAa
48
13.9 Power Down Mode and Clock Mask (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
tCKSP
tCKSP
CKE
,,,
,,,,,,,,,
,
,,
,,,,,,,,,
,
,,
,,,,,,,,,
,,
,
,,,,,,,,,
,,
,
,,,,,,,,,
,
,
,,,,,,,,,
,,
,
,,,,,,,,,
,
,,,,,,,,
,,,
VALID
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQM
CAa
L
QAa1 QAa2 QAa3
Activate
Command
for Bank A
QAa4
Read
Command
for Bank A
Power Down
Mode Entry
Power Down
Mode Exit
ACTIVE STANDBY
Precharge
Command
for Bank A
Clock Mask
Start
Clock Mask
End
Power Down
Mode Exit
Power Down
Mode Entry
PRECHARGE STANDBY
µPD4564323 for Rev. E
Hi-Z
DQ
13.10 CBR (Auto) Refresh
T0
T1
T2
T3
T4
T5
T6
Tn
Tn + 1 Tn + 2
Tn + 3 Tn + 4 Tn + 5 Tn + 6
Tm
Tm + 1 Tm + 2 Tm + 3 Tm + 4 Tm + 5 Tm + 6 Tm + 7
CLK
CKE
H
,,,,
,,,,,
,,,
,,
,
,,
,,
,
,,,
,
,,
,,
,,
,
,,
,,
,,
,
,,,
,
,,
,,
,
,
,,,
,,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,
,,
,
,,,
,
,,
,,,
,,
,
,,
,
,,
,,,
,,
,
,,
,
,,
,,
,
,,
,,
,
,,,
,,,
,,
,
,,
,,
,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
ADD
DQ
L
Hi-Z
Q1
Precharge
Command
(if necessary)
CBR (Auto)
Refresh
49
tRP
CBR(Auto)
Refresh
tRC1
Activate
Command
tRC1
Read
Command
µPD4564323 for Rev. E
DQM
50
13.11 Self Refresh (Entry and Exit)
T1
T2
T3
T4
Tn
Tn + 1 Tn + 2
Tm
Tm + 1
Tk
Tk + 1 Tk + 2 Tk + 3 Tk + 4
,,,,
,,,,
,,
,,
,,
,
,
,,
,
,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,
,,
,
,,,
,
,,
,
,
,,
,
,,,
,
,,
,
,
,,
,
,,,
,
,,
,
,
,,
,
,,,
,,
,
,
,
,,
,
,
,,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,,
,
,,
,
,
,,
,
,,,
,
,,
,
,
,,
,
,,,,,
,
,,
,
,
,,
,
,,
,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
T0
CLK
CKE
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
ADD
L
Hi-Z
DQ
Precharge
Command
(if necessary)
Self Refresh
Entry
Self Refresh Self Refresh
Entry
Exit
(or Activate Command)
Self Refresh
Exit
Activate
Command
Next Clock
Enable
tRP
tRC1
Next Clock
Enable
tRC1
µPD4564323 for Rev. E
DQM
13.12 Random Column Read (Page with Same Bank) (1/2) (Burst Length = 4, /CAS Latency = 2)
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,
,,,,
,,
,
,
,,
,
,
,
,,
,
,
,,
,
,
,
,,
,
,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,
,
,,
,
,
,,
,
,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,
,,
,
,
,
,,
,
,
,
,
,
,
,,
,,
,
,
,
,
,,
,,
,
,
,
,
,
,,
,
,
,,
,
,
,
,,
,
,
,,
,
,
,
,,
,
,
,,
,
,
,
,,
,
,
,,
,
,
,
,,
,
,
,,
,
,
,,
,
,
,
,,
,
T0
CLK
H
CKE
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
CAa
CAb
CAc
RAd
CAd
L
Hi-Z
QAa1
DQ
Activate
Command
for Bank A
Read
Command
for Bank A
QAa2
QAa3
Read
Command
for Bank A
QAa4
QAb1
Read
Command
for Bank A
QAb2
QAc1
QAc2
QAc3
Precharge
Command
for Bank A
QAc4
Activate
Command
for Bank A
QAd1
Read
Command
for Bank A
QAd2
QAd3
51
µPD4564323 for Rev. E
DQM
RAd
52
Random Column Read (Page with Same Bank) (2/2) (Burst Length = 4, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,,,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
CLK
H
CKE
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
CAa
CAb
CAc
RAa
CAa
Activate
Command
for Bank A
Read
Command
for Bank A
L
Hi-Z
QAa1 QAa2
DQ
Activate
Command
for Bank A
Read
Command
for Bank A
Read
Command
for Bank A
QAa3 QAa4
Read
Command
for Bank A
QAb1 QAb2
QAc1
QAc2
Precharge
Command
for Bank A
QAc3
QAc4
µPD4564323 for Rev. E
DQM
RAa
13.13 Random Column Write (Page with Same Bank) (1/2) (Burst Length = 4, /CAS Latency = 2)
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,
,,
,,
,,,
,,
,
,,
,
,
,,
,
,
,,
,
,,
,
,
,,
,
,
,,
,,
,
,,
,
,
,
,
,
,
,
,
,,
,,
,
,,
,
,
,
,,
,,
,
,
,,
,
,
,,
,,
,
,,
,
,
,
,
,
,
,,
,,
,
,,
,
,
,,
,
,,
,
,
,,
,
,
,,
,,
,,
,
,
,
,
,
,
,,
,
,
,
,
,
,
,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,,
,
,
,
,
,
,,
,
,,
,,
,
,
,
,,
,
,,
,
,
,
,,
,
,
,,
,
,,
,
,
,,
,
T0
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RDa
ADD
RDa
DQ
CDa
CDb
CDc
RDd
CDd
L
Hi-Z
Activate
Command
for Bank D
DDa1 DDa2
Write
Command
for Bank D
DDa3 DDa4
DDb1 DDb2
Write
Command
for Bank D
DDc1
Write
Command
for Bank D
DDc2
DDc3
DDc4
Precharge
Command
for Bank D
DDd1 DDd2
Activate
Command
for Bank D
Write
Command
for Bank D
DDd3
DDd4
53
µPD4564323 for Rev. E
DQM
RDd
54
Random Column Write (Page with Same Bank) (2/2) (Burst Length = 4, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RDa
ADD
RDa
DQ
CDa
CDb
CDc
RDd
CDd
L
Hi-Z
Activate
Command
for Bank D
DDa1
Write
Command
for Bank D
DDa2
DDa3
DDa4
DDb1
DDb2
Write
Command
for Bank D
DDc1
Write
Command
for Bank D
DDc2
DDc3
DDc4
Precharge
Command
for Bank D
DDd1 DDd2
Activate
Command
for Bank D
Write
Command
for Bank D
µPD4564323 for Rev. E
DQM
RDd
13.14 Random Row Read (Ping-Pong Banks) (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,,,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RDa
ADD
RDa
DQ
CDa
RBa
CBa
RDb
CDb
L
Hi-Z
Activate
Command
for Bank D
QDa1 QDa2 QDa3 QDa4 QDa5 QDa6 QDa7 QDa8 QBa1 QBa2 QBa3 QBa4
Read
Command
for Bank D
Activate
Command
for Bank B
Read
Command
for Bank B
55
Precharge
Command
for Bank D
Activate
Command
for Bank D
QBa5 QBa6 QBa7
QBa8
Read
Command
for Bank D
µPD4564323 for Rev. E
DQM
RDb
RBa
56
Random Row Read (Ping-Pong Banks) (2/2) (Burst Length = 8, /CAS Latency = 3)
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,
,
,,,,
,,
,,
,,
,
,
,
,
,,
,,
,
,
,,
,
,
,,
,,
,
,,
,
,
,
,
,
,
,,
,,
,
,,
,
,
,
,,
,,
,
,,
,
,
,
,
,,
,,
,
,
,,
,
,,
,
,
,,
,,
,
,,
,
,
,,
,
,
,,
,,
,
,
,,
,
,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,
,,
,
,
,
,,
,,
,
,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,
,,
,
,
,
,,
,
,,
,
,,
,
,
T0
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RBa
ADD
RBa
DQ
CBa
RAa
CAa
RBb
CBb
L
Hi-Z
Activate
Command
for Bank B
QBa1 QBa2
Read
Command
for Bank B
QBa3 QBa4 QBa5 QBa6 QBa7 QBa8 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7
Activate
Command
for Bank A
Read
Command
for Bank A
Precharge
Command
for Bank B
Activate
Command
for Bank B
Read
Command
for Bank B
Precharge
Command
for Bank A
µPD4564323 for Rev. E
DQM
RBb
RAa
13.15 Random Row Write (Ping-Pong Banks) (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,
,,,
,,
,
,,
,,
,,
,
,,
,,
,
,
,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,
,,
,
,,
,,
,
,
,,
,
,,
,,
,,
,
,
,
,,
,
,
,,
,,
,,
,
,
,,
,,
,,
,,
,
,
,
,
,
,,
,
,
,
,,
,,
,,
,
,
,,
,
,,
,
,,
,,
,
,
,,
,
,,
,
,,
,,
,
,
,,
,
,,
,
,,
,,
,
,
,
,,
,,
,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,
,,
,
,
,,
,
,,
,,
,
,,
,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RAb
RDa
RAb
CDa
CAb
L
Hi-Z
Activate
Command
for Bank A
DAa1 DAa2
Write
Command
for Bank A
DAa3
DAa4
DAa5
DAa6
DAa7
DAa8
Activate
Command
for Bank D
DDa1 DDa2
DDa3 DDa4
Write
Command
for Bank D
57
Precharge
Command
for Bank A
DDa5 DDa6 DDa7 DDa8
Activate
Command
for Bank A
DAb1
DAb2
DAb3
Write
Command
for Bank A
Precharge
Command
for Bank D
µPD4564323 for Rev. E
DQM
RDa
58
Random Row Write (Ping-Pong Banks) (2/2) (Burst Length = 8, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
,,,
,,,,,
,,,,,
,
,
,
,,
,,
,
,
,
,
,,
,
,,
,
,
,,
,,
,
,,
,
,,
,,
,,
,
,,
,
,
,
,
,,
,
,,
,,
,,
,
,
,
,
,,
,
,,
,
,,
,,
,
,
,
,,
,,
,
,
,
,
,,
,
,
,,
,,
,
,
,
,
,,
,,
,,
,
,
,
,
,,
,
,,
,,
,
,,
,
,
,
,
,,
,,
,,
,
,,
,
,,
,,
,,
,
,,
,
,
,
,
,
,,
,
,,
,,
,
,,
,
,
,,
,,
,
,,
,
,
,,
,
,
,,
,,
,,
,
,
,
,,
,
,,
,
,
,,
,,
,
,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,
,,
,
,,
,,
,
,,
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RDa
RAb
CDa
CAb
L
Hi-Z
Activate
Command
for Bank A
DAa1 DAa2
Write
Command
for Bank A
DAa3 DAa4
DAa5 DAa6
DAa7 DAa8
Activate
Command
for Bank D
DDa1 DDa2 DDa3 DDa4 DDa5 DDa6 DDa7 DDa8 DAb1
Write
Command
for Bank D
Precharge
Command
for Bank A
Activate
Command
for Bank A
Write
Command
for Bank A
DAb2
Precharge
Command
for Bank D
µPD4564323 for Rev. E
DQM
RAb
RDa
13.16 Read and Write (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
H
,,,,,,
,,
,,
,
,
,
,,
,
,,
,
,
,
,,
,
,,
,
,
,
,,
,
,,
,
,
,
,,
,
,,
,
,
,
,,
,
,,
,
,
,
,,
,
,
,,
,
,
,,,,,,,,,,
,,,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,,
,
,
,
,,
,
,,
,
,
,
,,
,
,,
,
,
,
,,
,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
CAb
CAa
CAc
Write Latency = 0
L
Word Masking
DQ
Hi-Z
Activate
Command
for Bank A
QAa1
Read
Command
for Bank A
QAa2
QAa3
QAa4
DAb1
DAb2
DAb4
Write
Command
for Bank A
59
Hi-Z at the end of wrap function
QAc1
QAc2
QAc4
Read
Command
for Bank A
0-Clock Latency
2-Clock Latency
µPD4564323 for Rev. E
DQM
60
Read and Write (2/2) (Burst Length = 4, /CAS Latency = 3)
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,,,,
,,
,,
,
,
,
,,
,
,,,,
,
,
,
,,
,
,,
,
,
,
,,
,
,,,,
,
,
,
,,
,
,,
,
,
,
,,
,
,,,,
,
,
,
,,
,
,
,,
,
,
,
,
,,,,
,
,,
,
,,,
,
,
,,
,
,
,
,,
,
,,,,
,
,
,
,,
,
,,
,
,
,
,,
,
,,,,
,
,
,
,,
,
,,
,
,,
,
,
,
,,,,
,
,
,
,,
,
,
,
,,
,
,,
,
,,,,
,
,
,,
,
,
T0
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
CAb
CAa
CAc
Write Latency = 0
L
Word Masking
DQ
Hi-Z
Activate
Command
for Bank A
QAa1
Read
Command
for Bank A
QAa2
QAa3
QAa4
DAb1
DAb2
DAb4
Write
Command
for Bank A
Hi-Z at the end of wrap function
QAc1
QAc2
Read
Command
for Bank A
0-Clock Latency
2-Clock Latency
µPD4564323 for Rev. E
DQM
13.17 Interleaved Column Read Cycle (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
H
/CS
,,
,
,,,
,,
,
,,
,
,,
,,
,
,
,
,
,
,,
,
,,
,,
,
,,
,
,
,,
,,
,
,,
,
,
,,
,,
,
,
,,
,
,,
,,
,
,
,,
,,
,
,
,,
,
,,
,,
,,
,
,
,
,
,
,
,
,,
,,
,,
,
,,
,
,,
,
,,
,
,
,,
,
,,
,,
,
,
,
,
,,
,,
,,
,
,
,
,
,
,,
,
,,
,,
,
,
,,
,
,
,,
,,
,,
,
,
,,
,,
,
,
,,
,
,,
,,
,
,,
,
,
,,
,,
,
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
CAa
RDa
CDa
CDb
CDc
CAb
CDd
L
Hi-Z
Aa1
DQ
Activate
Command
for Bank A
Read
Command
for Bank A
61
Activate
Command
for bank D
Aa2
Aa3
Read
Command
for Bank D
Aa4
Da1
Read
Command
for Bank D
Da2
Db1
Read
Command
for Bank D
Db2
Dc1
Read
Command
for Bank A
Dc2
Ab1
Ab2
Read
Command
for Bank D
Precharge
Command
for Bank A
Dd1
Dd2
Dd3
Precharge
Command
for Bank D
Dd4
µPD4564323 for Rev. E
DQM
RDa
62
Interleaved Column Read Cycle (2/2) (Burst Length = 4, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,
,,,
,,
,
,,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,
,,
,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,,
,,
,
,
,
,
,
,,
,
,
,
,,
,,
,,
,
,
,,
,
,,
,
,
,,
,,
,
,
,,
,,
,
,,
,,
,
,
,
,
,,
,,
,
,,
,
,,
,
,
,
,,
,,
,,
,
,,
,
,
,
,,
,,
,,
,
,,
,
,
,
,,
,,
,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,,
,
,
,,
,
,
,,
,
,,
,,
,
,,
,
,
,,
,
,,
,,
,
,,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RDa
CDa
CDb
CAb
CDc
L
Hi-Z
Activate
Command
for Bank A
Aa1
Read
Command
for Bank A
Activate
Command
for Bank D
Aa2
Read
Command
for Bank D
Aa3
Aa4
Read
Command
for Bank D
Da1
Da2
Read
Command
for Bank D
Db1
Db2
Dc1
Dc2
Ab1
Ab2
Read
Command
for Bank A
Precharge
Command
for Bank D
Precharge
Command
for Bank A
Ab3
Ab4
µPD4564323 for Rev. E
DQM
RDa
13.18 Interleaved Column Write Cycle (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,,,
,
,
,
,
,
,
,
,,,,,,,
,,,,,,,,,,
,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
RBa
CAa
CBa
CBb
CBc
CAb
CBd
L
Hi-Z
DQ
Activate
Command
for Bank A
Aa1
Aa2
Aa3
Write
Command
for Bank A
Aa4
Ba1
Write
Command
for Bank B
Activate
Command
for Bank B
Ba2
Bb1
Write
Command
for Bank B
Bb2
Bc1
Write
Command
for Bank B
Bc2
Ab1
Write
Command
for Bank A
Ab2
Bd1
Bd2
Write
Command
for Bank B
Precharge
Command
for Bank A
63
tDPL
Bd3
Bd4
Precharge
Command
for Bank B
tDPL
µPD4564323 for Rev. E
DQM
RBa
64
Interleaved Column Write Cycle (2/2) (Burst Length = 4, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,
,,
,,
,,,,
,
,
,,
,,
,
,,
,
,
,
,
,,
,
,,
,
,
,
,
,,
,
,,
,
,
,
,,
,
,
,
,,
,
,
,
,
,
,,
,
,,
,,
,
,
,
,,
,
,,
,,
,
,
,
,
,,
,
,
,,
,
,
,
,,
,,
,,
,
,
,
,
,,
,
,,
,
,,
,
,
,
,,
,,
,
,
,
,
,,
,
,,
,
,,
,
,,
,
,
,
,,
,
,,
,
,,
,
,
,
,,
,,
,
,,
,
,,
,
,
,,
,,
,
,,
,
,,
,
,
,
,,
,,
,
,,
,
,,
,
,
,,
,,
,
,,
,
,,
CLK
CKE
H
/CS
/RAS
/CAS
,
,
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RBa
Aa1
Aa2
CBa
CBb
CAb
CBc
CBd
L
Hi-Z
Activate
Command
for Bank A
Write
Command
for Bank A
Activate
Command
for Bank B
Aa3
Aa4
Ba1
Write
Command
for Bank B
Ba2
Bb1
Write
Command
for Bank B
Bb2
Bc1
Write
Command
for Bank B
Bc2
Ab1
Write
Command
for Bank A
Ab2
Bd1
Bd2
Bd3
Bd4
Write
Command
for Bank B
Precharge
Command
for Bank A
Precharge
Command
for Bank B
µPD4564323 for Rev. E
DQM
RBa
13.19 Auto Precharge after Read Burst (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,
,,,
,,,,,
,
,,
,
,
,,
,,
,
,,,,
,,
,,,
,
,,
,,
,
,,
,
,
,,
,
,,
,,,,
,,
,,,
,
,,
,
,,
,,
,
,
,
,
,,
,,
,,,,
,,
,,,
,,
,
,,
,
,
,,
,
,,
,,
,
,
,
,,,,
,,
,,,
,,
,
,,
,
,
,,
,
,
,,
,,
,
,,,,
,,
,,,
,
,,
,,
,
,,
,
,
,
,
,,
,,
,,,,
,,
,
,
,,,
,
,,
,,
,,
,
,
,
,,
,
,,
,
,,,,
,,
,,,
,
,,
,,
,
,
,,
,
,
,,
,,
,
,
,,,,
,,,
,,
,
,,
,
,,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RDa
RDb
CDa
CAb
RDb
RAc
CDb
RAc
CAc
L
Hi-Z
Activate
Command
for Bank A
Read
Command
for Bank A
Activate
Command
for Bank D
Read with
Auto Precharge
Command
for Bank D
65
Read with
Auto Precharge
Command
for Bank A
Auto Precharge
Start for Bank D
Activate
Command
for Bank D
Activate
Command
Read with
Read with for Bank A
Auto Precharge
Auto Precharge
Command
Command
for Bank A
for Bank D
Auto Precharge
Auto Precharge
Start for Bank A
Start for Bank D
µPD4564323 for Rev. E
DQM
RDa
66
Auto Precharge after Read Burst (2/2) (Burst Length = 4, /CAS Latency = 3)
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,,,,
,
,,
,
,
,
,,,,
,
,
,
,
,
,,
,
,
,
,,,,
,
,
,
,
,
,,
,
,
,
,,,,
,
,
,
,
,
,
,
,,
,
,,,,
,
,
,
,
,
,,
,
,
,
,,,,
,
,
,
,
,
,,
,
,
,
,,,,
,
,
,
,
,
,,
,
,
,
,,,,
,
,
,
,
,
,
,,
,
,
,,,,
,
,
,
,
T0
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQM
CAa
RDa
RDb
CDa
CAb
RDb
CDb
L
Hi-Z
Activate
Command
for Bank A
Activate
Command
for Bank D
Read
Command
for Bank A
Read with
Auto Precharge
Command
for Bank D
Read with
Auto Precharge
Command
for Bank A
Auto Precharge
Start for Bank D
Auto Precharge
Start for Bank A
Activate
Command
for Bank D
Read with
Auto Precharge
Command
for Bank D
µPD4564323 for Rev. E
DQ
RDa
13.20 Auto Precharge after Write Burst (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,
,,,,
,
,,,
,
,,
,
,,
,
,,
,,,
,,
,
,,
,
,,,,
,,
,
,,
,
,,
,
,,
,,
,,
,,,
,
,
,,,,
,,
,
,,
,
,,
,
,
,,
,,,
,,
,
,,
,
,
,,,,
,,
,
,
,,
,
,,
,
,,
,,,
,,
,
,,
,
,
,,,,
,,
,
,,
,
,,
,
,,
,,,
,,
,
,,
,
,,,,
,,
,
,,
,
,,
,
,
,,
,,,
,,
,
,,
,
,
,,,,
,,
,
,,
,
,,
,
,
,
,,
,,,
,,
,
,,
,,,,
,
,
,,
,
,,
,
,,
,
,
,,
,,,,
,,,
,,
,
,,
,
,
,,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQM
CAa
RDa
RDb
CDa
CAb
RDb
RAc
CDb
RAc
CAc
L
Hi-Z
Activate
Command
for Bank A
Activate
Command
for Bank D
Write
Command
for Bank A
Activate
Command
for Bank D
Write with
Auto Precharge
Command
for Bank D
Write with
Auto Precharge
Command
for Bank A
Activate
Command
for Bank A
67
Write with
Write with
Auto Precharge
Auto Precharge
Command
Command
for Bank D
for Bank A
Auto Precharge
Auto Precharge
Auto Precharge
Start for Bank D
Start for Bank A
Start for Bank D
µPD4564323 for Rev. E
DQ
RDa
68
Auto Precharge after Write Burst (2/2) (Burst Length = 4, /CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
,,,
,,,,
,,,
,
,
,,
,
,,
,,,,
,
,,,
,
,,
,,
,
,
,,
,
,,
,,,,
,
,
,,,
,,
,
,,
,
,
,,
,
,,
,
,,,,
,
,,,
,,
,
,,
,,
,,
,
,
,
,
,,,,
,
,,,
,,
,
,,
,
,
,,
,
,,
,,,,
,
,,,
,,
,
,,
,
,
,,
,
,,
,,,,
,
,,,
,,
,
,,
,
,
,,
,
,,
,,,,
,
,,,
,,
,
,,
,
,
,,
,
,,
,,,,
,,,
,,
,
,,
,
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RDa
RDb
CDa
CAb
RDb
CDb
L
Hi-Z
Activate
Command
for Bank A
Activate
Command
for Bank D
Write
Command
for Bank A
Write with
Auto Precharge
Command
for Bank D
Write with
Auto Precharge
Command
for Bank A
Auto Precharge
Start for Bank D
Activate
Command
for bank D
Auto Precharge
Start for Bank A
Write with
Auto Precharge
Command
for Bank D
µPD4564323 for Rev. E
DQM
RDa
13.21 Full Page Read Cycle (1/2) (/CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
Tn
Tn + 1 Tn + 2 Tn + 3 Tn + 4 Tn + 5 Tn + 6 Tn + 7 Tn + 8 Tn + 9 Tn + 10 Tn + 11 Tn + 12 Tn + 13
,,,,,,
,,,,,,,,,,,,
,
,
,
,
,,
,,,,,,,
,
,
,
,,
,,,,,,,,,,
,,,,
,,
,,,,,,,,,,
,,,,
,,
,,,,,,,,,,
,,,,
,,
,,,,,,,,,,
,,,,
,,
,,,,,,,,,,
,,,,
,,
,,,,,,,,,,
,,,,
,,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RDb
RDa
CDa
RDb
L
Hi-Z
Activate
Command
for Bank A
Aa
Read
Command
for Bank A
Activate
Command
for Bank D
Aa+1
Aa+2
Aa-2
Aa-1
Aa
Aa+1
Da
Da+1
Da+2
Da+3
Da+4
Read
Command
for Bank D
Da+5
Da+6
Precharge
Command
for Bank D
Burst Stop Command
Activate
Command
for Bank D
69
µPD4564323 for Rev. E
DQM
RDa
70
Full Page Read Cycle (2/2) (/CAS latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Tn
Tn + 1 Tn + 2 Tn + 3 Tn + 4 Tn + 5 Tn + 6 Tn + 7 Tn + 8 Tn + 9 Tn + 10 Tn + 11 Tn + 12
CLK
,,,,,
,,,,,,,,,,
,
,,
,,,,,,,,,
,
,
,,
,,,,,,,,,,
,
,
,,
,,,,,,,,,,
,
,
,,
,,,,,,,,,,
,
,
,,
,,,,
,
,,,,,,,,
,
,,
,,,,,,,,,,
,
,
,,
,,,,,,,,,,
,
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RDb
RDa
CDa
RDb
L
Hi-Z
Activate
Command
for Bank A
Aa
Read
Command
for Bank A
Activate
Command
for Bank D
Aa+1
Aa-3
Aa-2
Aa-1
Aa
Aa+1
Da
Da+1
Da+2
Da+3
Da+4
Da+5
Read
Command
for Bank D
Burst Stop Command
Precharge
Command
for Bank D
Activate
Command
for Bank D
µPD4564323 for Rev. E
DQM
RDa
13.22 Full Page Write Cycle (1/2) (/CAS latency = 2)
T0
T1
T2
T3
T4
T5
Tn
Tn + 1 Tn + 2 Tn + 3 Tn + 4 Tn + 5 Tn + 6 Tn + 7 Tn + 8 Tn + 9 Tn + 10 Tn + 11 Tn + 12 Tn + 13 Tn + 14 Tn + 15
,,,,,,,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,,,,
,,
,
,,
,,
,
,,
,
,,
,
,,
,,,,
,,
,,,,,,
,,,
,,
,,
,,
,
,
,,
,,
,,
,,,,
,,
,,,
,
,,
,,
,,
,,
,
,
,,
,,
,,
,,,,
,,
,,,
,
,,
,,
,,
,,
,,
,
,,
,
,,
,,
,,,,,
,,
,,
,
,,
,,
,,
,,
,
,,
,
,,
,
,,
,,,,,
,,
,,
,
,,
,
,,
,,
,
,
,,
,
,,
,,
,,,,
,,
,
,
,,,,,,,
,,
,,
,
,,
,
,,
,,
,
,
,,
,,,,
,,,
,,
,
,,
,,
,,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RDb
RDa
CDa
RDb
L
Hi-Z
Activate
Command
for Bank A
Aa
Write
Command
for Bank A
Aa+1
Aa+2
Activate
Command
for Bank D
Aa-2 Aa-1
Aa
Aa+1
Da
Da+1
Da+2
Da+3
Da+4
Da+5
Precharge
Command
for Bank D
Write
Command
for Bank D
Burst Stop Command
71
Activate
Command
for Bank D
µPD4564323 for Rev. E
DQM
RDa
72
Full Page Write Cycle (2/2) (/CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
Tn
Tn + 1 Tn + 2 Tn + 3 Tn + 4 Tn + 5 Tn + 6 Tn + 7 Tn + 8 Tn + 9 Tn + 10 Tn + 11 Tn + 12 Tn + 13
CLK
,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,
,,
,
,,,,,,,,,,
,
,,
,
,,,,,,,,,,
,
,,
,
,,,,,,,,,,
,
,,
,
,,,,,,,,,,
,
,,
,
,,,,,,,,,,
,
,,
,
,,,,,,,,,,
,
,,
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQ
CAa
RDb
RDa
CDa
RDb
L
Hi-Z
Activate
Command
for Bank A
Aa
Aa+1
Write
Command
for Bank A
Aa+2
Activate
Command
for Bank D
Aa+3
Aa-1
Aa
Aa+1
Da
Da+1
Da+2
Da+3
Da+4
Da+5
Precharge
Command
for Bank D
Write
Command
for Bank D
Burst is not completed
in the Full Page Mode
Burst Stop Command
Activate
Command
for Bank D
µPD4564323 for Rev. E
DQM
RDa
13.23 Byte Write Operation (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
,,, ,,
,
,
,
,,,,,, ,,,
,,,
,
,
,,,,,, ,,,,
,,,
,,,,,, ,
,
,,,,,, ,
,
,,,,,, ,,,,
,
,
,,,,,, ,,,
,,,
,
,
,,,,,, ,,,
,
,
,,,,,, ,,,,
,,,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
ADD
DQM0
DQ 0-7
DQ 8-15
73
Activate
Command
for Bank D
Read
Command
for Bank D
Byte 1
not Read
Byte 0
not Write
Byte 1
not Write
Byte 0
not Write
µPD4564323 for Rev. E
DQM1
74
13.24 Burst Read and Single Write (Option) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
CKE
H
,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
ADD
DQ
Hi-Z
Activate
Command
for Bank D
Qa1
Read
Command
for Bank D
Qa2
Qa3
Qa4
D1
Single
Write
Command
for Bank D
Qb1
Single
Write
Command
for Bank D
Read
Command
for Bank D
Qb2
Qb4
D2
Single
Write
Command
for Bank D
µPD4564323 for Rev. E
DQM
13.25 Full Page Random Column Read (Burst Length = Full Page, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
RDa
RDa
CAa
CDa
CAb
CDb
CAc
QAa1 QDa1
QAb1 QAb2
QDb1 QDb2
CDc
tRCD
DQ
L
tRRD
tRCD
Hi-Z
Activate
Command
for Bank A
Activate
Command
for Bank D
Read
Command
for Bank A
Read
Command
for Bank A
75
Read
Command
for Bank D
Read
Command
for Bank D
Read
Command
for Bank A
QAc1
QAc2
Read
Command
for Bank D
QAc3
QDc1
QDc2
QDc3
Precharge
Command
for Bank D
(PRE Termination of Burst)
Hi-Z
µPD4564323 for Rev. E
DQM
76
13.26 Full Page Random Column Write (Burst Length = Full Page, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,,,,,
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
RDa
RDa
CAa
CDa
CAb
CDb
CAc
DDb1 DDb2
DAc1
CDc
tRCD
DQ
L
Hi-Z
Activate
Command
for Bank A
tRRD
tRCD
DAa1 DDa1
Activate
Command
for Bank D
Write
Command
for Bank A
DAb1
Write
Command
for Bank A
Write
Command
for Bank D
DAb2
Write
Command
for Bank D
Write
Command
for Bank A
DAc2
DAc3
DDc1
Write
Command
for Bank D
DDc2
DDc3
DDc4
Precharge
Command
for Bank D
(PRE Termination of Burst)
µPD4564323 for Rev. E
DQM
13.27 PRE (Precharge) Termination of Burst (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
,,,,,
,,,,,,,,,,
,,,,,,,
,,
,,,,,,,,,,
,,
,,
,,,,,,,,,,
,,
,,
,,,,,,,,,,
,,
,,
,,,,,,,,,,
,,
,,
,,,,,,,,,,
,,
,,
,,,,,,,,,,
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQM
CAa
RAb
RAc
CAb
RAc
Write
Masking
L
Hi-Z
DAa1
DAa2 DAa3
DAa4
DAa5
QAb1 QAb2
Write
Command
for Bank A
Activate
Command
for Bank A
QAb3 QAb4 QAb5
Activate
Command
for Bank A
Read
Command
for Bank A
PRE Termination
of Burst
tRCD
Precharge
Command
for Bank A
tDPL
77
tRAS
Activate
Command
for Bank A
tRP
Hi-Z
PRE Termination
of Burst
tRAS
Precharge
Command
for Bank A
µPD4564323 for Rev. E
DQ
RAb
78
PRE (Precharge) Termination of Burst (2/2) (Burst Length = 8, /CAS Latency = 3)
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
,,,,
,,
,,,,,
,,
,
,
,
,,
,
,,
,
,,
,
,
,,,,
,
,,
,
,,
,
,,
,
,
,,
,,,,
,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,,,,
,
,,
,
,
,
,,
,
,
,
,
,,
,,,,,,
,
,,
,
,
,
,,
,,
,
,,
,
,,
,
,
,,
,,,,
,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,,,,
,
,
,,
,
,
,,
,
,,
,
,,
,
,
,,
,,,,
,
,
,,
,
,
,,
,
,,
,,
,
,
,,
,
,,,,
,
,,
,
,,
,
,
T0
CLK
CKE
H
/CS
/RAS
/CAS
Data Sheet M14376EJ2V0DS00
/WE
BA0
BA1
A10
RAa
ADD
RAa
DQM
RAb
CAa
RAb
RAc
CAb
RAc
Write
Mask
L
DAa1
DAa2
DAa3
DAa4
Hi-Z
DAa5
Write
Command
for Bank A
Activate
Command
for Bank A
PRE Termination
of Burst
tRCD
QAb3 QAb4
Read
Command
for Bank A
Precharge
Command
for Bank A
tDPL
tRAS
QAb1 QAb2
Activate
Command
for Bank A
tRP
PRE Termination
of Burst
tRAS
Activate
Command
for Bank A
Precharge
Command
for Bank A
µPD4564323 for Rev. E
Hi-Z
DQ
µPD4564323 for Rev. E
★
14. Package Drawing
86-PIN PLASTIC TSOP (II) (10.16 mm (400))
detail of lead end
86
44
F
G
R
P
L
S
1
E
43
A
H
I
J
S
C
D
M
N
M
L
S
K
B
NOTES
1. Each lead centerline is located within 0.08 mm of
its true position (T.P.) at maximum material condition.
2. Dimension "A" does not include mold flash, protrusions or gate
burrs. Mold flash, protrusions or gate burrs shall not exceed
0.15mm per side.
ITEM
A
MILLIMETERS
22.22±0.05
B
0.765 MAX.
C
0.5 (T.P.)
D
0.22+0.08
−0.07
E
0.10±0.05
F
1.1±0.1
G
1.00
H
11.76±0.20
I
10.16±0.10
J
0.80±0.20
K
0.145+0.025
−0.015
L
0.50
M
0.08
N
0.10
P
3° +5°
−3°
R
0.25
S
0.60±0.15
S86G5-50-9JH-1
Data Sheet M14376EJ2V0DS00
79
µPD4564323 for Rev. E
15. Recommended Soldering Condition
Please consult with our sales offices for soldering conditions of the µPD4564323.
Type of Surface Mount Device
µPD4564323G5: 86-pin Plastic TSOP (II) (10.16 mm (400))
16. Revision History
Edition /
Date
1st edition /
Page
This
Previous
edition
edition
Description
Type of
revision
Location
–
–
–
–
p.2
p.2
Deletion
µPD4564323G5-A60L-9JH, 4564323G5-A70L-9JH, 4564323G5-A80L-9JH,
p.3
p.3
Deletion
L (Low Power)
p.33
p.33
Deletion
ICC6 (-AxxL (Maximum))
p.34
p.34
Modification
Test Conditions
p.79
p.79
Modification
Package Drawing
June 1999
2nd edition /
µPD4564323G5-A10L-9JH, 4564323G5-A10BL-9JH
December 1999
80
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
[MEMO]
Data Sheet M14376EJ2V0DS00
81
µPD4564323 for Rev. E
[MEMO]
82
Data Sheet M14376EJ2V0DS00
µPD4564323 for Rev. E
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet M14376EJ2V0DS00
83
µPD4564323 for Rev. E
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8