NJG1301V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japanese PHS and digital wireless phone. NJG1301V features low operating voltage, high efficiency, and comes with, internal input and output matching circuit and very small SSOP package. This amplifier is operated up to 21dBm output level with very low noise generation. nPACKAGE OUTLINE NJG1301V nFEATURES lLow operating voltage +3.0V typ. lLow current consumption 185mA typ. @f=1.9GHz, Pout=21dBm lLow distortion (ACP) -60dBc typ. @f=1.9GHz, Pout=21dBm lReduction of redact parasitic oscillation lInput and output internal matching circuits lPackage SSOP14 nPIN CONFIGURATION V Type (Top View) 1 14 2 13 3 12 4 11 5 10 6 9 7 8 Pin connection 1.RFin 8.RFout 2.GND 9.GND 3.VGG1 10.VDD2 4.GND 11.GND 5.VGG2 12.VDD1 6.GND 13.GND 7.GND 14.GND -1- NJG1301V nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Gate Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD1,VDD2 VGG1,VGG2 Pin PD Topr Tstg (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6 V -4 V 10 dBm 600 mW -30~+85 °C -40~+150 °C CONDITIONS VGG1,VGG2 =-0.9V VDD1,VDD2=-3.0V VDD1,VDD2=-3.0V, VGG1,VGG2 =-0.9V At on PCB boad nELECTRICAL CHARACTERISTICS PARAMETER Operating Freq. Drain Voltage Gate Voltage Idle Current *1 Operating Current *1 Gate Current *2 Small Signal Gain Gain Flatness Pout at 1dB Gain Compression point Adjacent Channel Leakage Power 1 Adjacent Channel Leakage Power 2 Input VSWR Load VSWR Tolerance SYMBOL freq VDD1,2 VGG1,2 Iidle IDD IGG Gain Gflat P-1dB Pacp1 Pacp2 VSWRi - CONDITIONS VDD1,2=3.0V VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V, RF No signal VDD1,2=3.0V, Pout=21dBm VDD1,2=3.0V, Pout=21dBm VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V VDD1,2=3.0V, Pout=21dBm offset=600kHz, Pin; π/4 DQPSK VDD1,2=3.0V, Pout=21dBm offset=900kHz, Pin; π/4 DQPSK VDD1,2=3.0V VDD1,2=3.0V, Pout=21dBm Load VSWR=4:1, All phase *1: Total current of VDD1 terminal and VDD2 terminal *2: Total current of VGG1 terminal and VGG2 terminal -2- MIN 1.89 2.9 -1.25 165 170 -150 20 0 (Ta=25°C, Zs=Zl=50Ω) TYP MAX UNITS 1.92 GHz 3.0 5.0 V -0.9 -0.6 V 170 175 mA 185 195 mA -70 uA 23 26 dB 0.5 1.0 dB 21 22 - dBm - -60 -55 dBc - -65 -60 dBc 2.2 Parasitic Osc. vs Fundamental Signal Level -60dBc Max. NJG1301V nTYPICAL CHARACTERISTICS Gain vs. Frequency (V =3.0V, I =170mA, V DD DD o =-0.71V, T =25 C ) GG a 40 Gain (dB) 30 20 10 0 -10 0.0 1.0 2.0 Frequency f (GHz) P acp 3.0 vs. Operating Current vs. V Operating Current, Gate Current vs. Input Power o DD o (P out =21dBm ,f=1.9GHz, T =25 C) (V a -50 250 =3.0V, I DD =170mA, f=1.9GHz ,T a =25 C) idle 10 V =2.9V (mA) 3.3V -65 5.0V -70 4.0V -75 140 I 0 GG I -10 -20 100 150 160 170 180 190 200 -10 -5 Gain, Pacp vs. Ambient Temperature =3.0V, I DD =170mA, P idle out Gain 22 20 -65 0 20 40 60 o Ambient Temperature T a ( C) 80 DD Operating Current I (mA) (dBc) acp P Gain (dBm) acp -60 (dBm) 190 26 24 10 (VDD=3.0V, idle I =170mA, Pout=21dBm, f=1.9GHz) -55 -20 5 Operating Current vs. Ambient Temperature =21dBm, f=1.9GHz) 28 P 0 Input Power Pin DD -40 GG 150 Operating Current I (mA) (V DD 200 Gate Current I Operating Current I (dBc) -60 acp P DD 3.0V ( uA) DD -55 185 180 175 -40 -20 0 20 40 60 80 Ambient Temperature T ( oC) a -3- NJG1301V nTYPICAL CHARACTERISTICS Gain vs. PHS Band Frequency |S |, |S | vs. Frequency o 11 (V =3.0V, I =170mA, V =-0.71V, T =25 C) DD DD GG 22 a (V 25 o DD =3.0V, I =170mA, T =25 C) DD a 20 24 23 |S |, |S | (dB) 0 |S | 22 22 22 -10 11 |S11| 21 -20 -30 20 1.89 1.90 1.91 0.0 1.92 1.0 Frequency f (GHz) Output Power,Total Current vs. Input Power (V o ( V =3V, f=1.9GHz, T =25 C ) =3V, f=1.9GHz, T =25 C ) DD a 10 200 5 150 Total Current @I =80mA 100 idle 60mA 40mA 20mA -5 -10 -25 -20 -15 -10 -5 0 Input Power P in (dBm) -4- 5 10 (dBm) 250 20mA out 15 Total Current (mA) (dBm) out Output Power P 40mA =80mA idle 60mA 20 300 60mA 0 70 Output Power @I =80mA idle Output Power P Output Power @I a 25 350 25 20 3.0 Output Power,P.A.E. vs. Input Power o DD 2.0 Frequency f (GHz) 40mA 15 60mA 5 0 -10 30 40mA 0 -5 50 20mA P.A.E. @I =80mA 40 idle 10 50 60 20 20mA 10 0 -25 -20 -15 -10 -5 0 Input Power P (dBm) in 5 10 Power Added Efficiency (%) Gain (dB) 10 NJG1301V nRECOMMENDED CIRCUIT V TYPE RFin 1 GND 14 RFin GND GND VGG (-0.5 ~ -1.2V) IDD=0 @VGG < -2V C3 C1 C1 C2 C2 7 VGG1 VDD1 GND GND VGG2 VDD2 GND GND GND RFout C2 L1 8 C2 C1 C1 VDD (3.0~5.0V) C3 RFout C1: 1000pF C2: 33pF C3: 1uF C4: 2.2nH nRECOMMENDED PCB DESIGN PCB : FR4 t=0.2mm 1uF CAPACITOR MURATA GRM39 Series INDUCTOR TAIYO-YUDEN HK1608 Series 2.2nH 1uF -5- NJG1301V nAPPLICATION CIRCUIT ( NEGATIVE VOLTAGE GENERATOR) +3.0V -3.0V 10KΩTrimmer Resistance - 8 7 6 5 + 10uF (7KΩ) NJU7660 2 1 3 VGG (-0.9Vtyp.) 4 (3KΩ) + - 10uF -6- NJG1301V nPACKAGE OUTLINE (SSOP14) Lead material Lead surface finish Molding material UNIT Weight Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. : Copper : Solder plating : Epoxy resin : mm :66mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. -7-