NTE NTE102A

NTE102A (PNP) & NTE103A (NPN)
Germanium Complementary Transistors
Medium Power Amplifier
Description:
The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type
package designed for use as a medium power amplifier.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +90°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Voltage
VCBO
IC = 200µA, IE = 0
32
–
–
V
Collector Cutoff Current
ICBO
VCB = 10V, IE = 0
–
–
25
µA
DC Current Gain
hFE1
VCB = 0, IE = 50mA
63
–
295
hFE2
VCB = 0, IE = 300mA
69
–
273
Common–Emitter Cutoff Frequency
fαe
VCB = 2V, IE = 10mA
10
–
–
kHz
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA
–
0.17
–
V
VCB = 5V, IE = 5mA, f = 1kHz
–
–
25
dB
Noise Figure
NF
.240 (6.09) Dia Max
.410
(10.4)
Max
1.500
(38.1)
Min
.018 (0.45)
.071 (1.82) Dia
Base
Emitter
Collector