NTE102A (PNP) & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +90°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Voltage VCBO IC = 200µA, IE = 0 32 – – V Collector Cutoff Current ICBO VCB = 10V, IE = 0 – – 25 µA DC Current Gain hFE1 VCB = 0, IE = 50mA 63 – 295 hFE2 VCB = 0, IE = 300mA 69 – 273 Common–Emitter Cutoff Frequency fαe VCB = 2V, IE = 10mA 10 – – kHz Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA – 0.17 – V VCB = 5V, IE = 5mA, f = 1kHz – – 25 dB Noise Figure NF .240 (6.09) Dia Max .410 (10.4) Max 1.500 (38.1) Min .018 (0.45) .071 (1.82) Dia Base Emitter Collector