COMSET 2N3055

2N3055
POWER LINEAR AND SWITCHING
APPLICATIONS
The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case.
It is intended for power switching circuits, series and shunt regulators, output stages
and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCBO
Collector to Base Voltage
100
V
VCEO
#Collector-Emitter Voltage
60
V
VCER
Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current – Continuous
15
Adc
IB
Base Current – Continuous
7
Adc
PD
Total Device Dissipation
115
0.657
Watts
W/°C
TJ
Junction Temperature
200
°C
TS
Storage Temperature
-65 to
+200
°C
Value
Unit
1.52
°C/W
@ TC = 25°
Derate above 25°
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
COMSET SEMICONDUCTORS
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2N3055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
BVCER
Collector-Emitter Sustaining
IC=200 mAdc, IB=0
Voltage (1)
Collector-Emitter
IC=200 mAdc, RBE=100Ω
Breakdown Voltage (1)
ICEO
Collector-Emitter Current
CVE=30 Vdc, IB=0
-
-
0.7
-
5.0
Collector Cutoff Current
VCE=100 Vdc, VEB(off)=1.5 Vdc
VCE=100 Vdc, VEB(off)=1.5 Vdc,
TC=150°C
-
ICEX
IEBO
Emitter Cutoff Current
VBE=7.0 Vdc, IC=0
-
-
5.0
hFE
DC Current Gain
VCE(SAT)
Collector-Emitter saturation
Voltage
IC=4.0 Adc, VCE=4.0 Vdc
IC=10 Adc, VCE=4.0 Vdc
IC=4.0 Adc, IB=0.4Adc
IC=10 Adc, IB=3.3Adc
20
5.0
-
-
70
1.1
8.0
VBE
Base-Emitter Voltage
IC=4.0 Adc, VCE=4.0 Vdc
-
1.8
-
Vdc
hfe
Small Signal Current Gain
VCE=4.0 Vdc, IC=1.0 Adc, f=1.0 kHz
15
-
120
-
10
-
-
kHz
1.95
-
-
A
VCEO(SUS)
Small Signal Current Gain
VCE=4.0 Vdc, IC+=1.0 Adc, f=1.0 kHz
Cutoff Frequency
Second Breakdown
t=1 S (non repetitive), VCE=60 Vdc
Is/b
Collector Current
In accordance with JEDEC Registration Data
(1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
fαe
60
-
-
Vdc
70
-
-
Vdc
mAdc
30
MECHANICAL CHARACTERISTICS CASE-TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
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mAdc
mAdc
Vdc