2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector to Base Voltage 100 V VCEO #Collector-Emitter Voltage 60 V VCER Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 7 V IC Collector Current – Continuous 15 Adc IB Base Current – Continuous 7 Adc PD Total Device Dissipation 115 0.657 Watts W/°C TJ Junction Temperature 200 °C TS Storage Temperature -65 to +200 °C Value Unit 1.52 °C/W @ TC = 25° Derate above 25° THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS 1/2 2N3055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BVCER Collector-Emitter Sustaining IC=200 mAdc, IB=0 Voltage (1) Collector-Emitter IC=200 mAdc, RBE=100Ω Breakdown Voltage (1) ICEO Collector-Emitter Current CVE=30 Vdc, IB=0 - - 0.7 - 5.0 Collector Cutoff Current VCE=100 Vdc, VEB(off)=1.5 Vdc VCE=100 Vdc, VEB(off)=1.5 Vdc, TC=150°C - ICEX IEBO Emitter Cutoff Current VBE=7.0 Vdc, IC=0 - - 5.0 hFE DC Current Gain VCE(SAT) Collector-Emitter saturation Voltage IC=4.0 Adc, VCE=4.0 Vdc IC=10 Adc, VCE=4.0 Vdc IC=4.0 Adc, IB=0.4Adc IC=10 Adc, IB=3.3Adc 20 5.0 - - 70 1.1 8.0 VBE Base-Emitter Voltage IC=4.0 Adc, VCE=4.0 Vdc - 1.8 - Vdc hfe Small Signal Current Gain VCE=4.0 Vdc, IC=1.0 Adc, f=1.0 kHz 15 - 120 - 10 - - kHz 1.95 - - A VCEO(SUS) Small Signal Current Gain VCE=4.0 Vdc, IC+=1.0 Adc, f=1.0 kHz Cutoff Frequency Second Breakdown t=1 S (non repetitive), VCE=60 Vdc Is/b Collector Current In accordance with JEDEC Registration Data (1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% fαe 60 - - Vdc 70 - - Vdc mAdc 30 MECHANICAL CHARACTERISTICS CASE-TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2 mAdc mAdc Vdc