NTE NTE2300

NTE2300
Silicon NPN Transistor
High Voltage, Horizontal Output
Description:
The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen
color TV deflection circuits.
Features:
D High Breakdown Voltage and High Reliability
D High Switching Speed
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Collector Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Charactertistics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
1
mA
DC Current Gain
hFE
VCE = 5V, IC = 1A
8
–
–
fT
VCE = 10V, IC = 1A
–
3
–
MHz
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 0.8A
–
–
5.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 0.8A
–
–
1.5
V
Current–Gain Bandwidth Product
Collector–Base Breakdown Voltage
V(BR)CBO IC = 5mA, IE = 0
1500
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 100mA, RBE = ∞
800
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 200mA, IC = 0
7
–
–
V
–
–
0.4
µs
Fall Time
tf
IC = 4A, IB1 = 0.8A, IB2 = –1.6A
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)