NTE2590 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 900V, IE = 0 – – 1.0 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 µA DC Current Gain hFE VCE = 5V, IC =2mA 20 50 120 fT VCE = 10V, IC = 2mA – 6 – MHz Cob VCB = 100V, f = 1MHz – 2.0 – pF Gain–Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage VCE(sat) IC = 5mA, IB = 1mA – – 5 V Base Emitter Saturation Voltage VBE(sat) IC =5A, IB = 1mA – – 2 V 1700 – – V 900 – – V 5 – – V Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ Emitter Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 .402 (10.2) .035 (0.9) .177 (4.5) .051 (1.3) .346 (8.8) B C E .433 (11.0) .019 (0.5) .100 (2.54)