NTE NTE2581

NTE2581
Silicon NPN Transistor
High Speed Switching Regulator
Features:
D High Breakdown Voltage and High Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 400V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
10
µA
DC Current Gain
hFE
VCE = 5V, IC = 1.6A
20
–
40
VCE = 5V, IC = 8A
10
–
–
VCE = 5V, IC = 10mA
10
–
–
fT
VCE = 10V, IC = 1.6A
–
20
–
MHz
Cob
VCB = 10V, f = 1MHz
–
160
–
pF
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 1.6A
–
–
0.8
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 8A, IB = 1.6A
–
–
1.5
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 1mA, IE = 0
500
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 10mA, RBE = ∞
400
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 1mA, IC = 0
7
–
–
V
Collector–Emitter Sustaining Voltage
VCEX(sus)
IC = 6A, IB1 = 0.6A, IB2 = –2.4A,
L = 500µH, Clamped
400
–
–
V
–
–
0.5
µs
–
–
2.5
µs
–
–
0.3
µs
Turn–On Time
ton
Storage Time
tstg
Fall Time
IC = 10A, IB1 = 2A, IB2 = –4A,
RL = 20Ω,
Ω VCC = 200V, Note 2
tf
Note 2. Pulse Width = 20µs, Duty Cycle ≤ 1%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab