NTE NTE2308

NTE2308
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pules test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 400V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
10
µA
DC Current Gain
hFE
VCE = 5V, IC = 1.6A
15
–
–
VCE = 5V, IC = 8A
8
–
–
VCE = 10V, IC = 1.6A
–
20
–
MHz
Current Gain–Bandwidth Product
fT
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 1.6A
–
–
1.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 8A, IB = 1.6A
–
–
1.5
V
VCB = 10V, f = 1MHz
–
160
–
pF
Output Capacitance
Cob
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
500
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CBO IC = 10mA, RBE = ∞
400
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
7
–
–
V
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 12A, IB = 2.4A, L = 50µH
400
–
–
V
VCEX(sus) IC = 12A, IB1 = 2.4A, L= 200µH,
IB2 = –2.4A, Clamped
400
–
–
V
IC = 3A, IB1 = 0.6A, L= 200µH,
IB2 = –0.6A, Clamped
450
–
–
V
VCC = 200V, IC = 10A, IB1 = 2A,
IB2 = –2A, RL = 20Ω
Ω
–
–
1.0
µs
–
–
2.5
µs
–
–
1.0
µs
Turn–On Time
ton
Storage Time
tstg
Fall Time
tf
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)