NTE280 (NPN) & NTE281 (PNP) Silicon Complementary Trasistors Audio Power Amplifier Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications. Features: D High Power Dissipation: PC = 100W D Collector–Emitter Breakdown Voltage: V(BR)CEO = 140V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –12A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 140 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 5 – – V Collector Cutoff Current ICBO VCB = 60V, IE = 0 – – 100 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 100 µA DC Current Gain hFE VCE = 5V, IC = 2A 40 – 140 Collector–Emitter Saturation Voltage VCE(sat) IC = 7A, IB = 700mA – – 3.0 V Base–Emitter ON Voltage VBE(on) VCE = 5V, IC = 7A – – 2.5 V fT VCE = 5V, IC = 2A – 5 – MHz VCE = 10V, IE = 0, f = 1MHz – 220 – pF Current–Gain Bandwidth Product Output Capacitance Ccb Note 1. NTE280MP is a matched pair of NTE280 with their DC Current Gain (hFE) matched to within 10% of each other. Note 2. NTE281MCP is a matched complementary pair containing 1 each of NTE280 (NPN) and NTE281 (PNP). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case