NTE NTE293

NTE293 (NPN) & NTE294 (PNP)
Silicon Complementary Transistors
Audio Amplifier and Driver
Description:
The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type
package designed for use in low–frequency power amplification and drive applications.
Features:
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
60
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 2mA, IB = 0
50
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
–
–
V
–
–
0.1
µA
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
DC Current Gain
hFE
VCE = 10V, IC = 500mA, Note 2
120
–
240
VCE = 5V, IB = 1A, Note 2
50
100
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA, Note 2
–
0.2
0.4
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 500mA, IB = 50mA, Note 2
–
0.85
1.2
V
Current–Gain Bandwidth Product
fT
VCB = 10V, IE = 50mA, f = 200MHz
–
200
–
MHz
VCB = 10V, Ie = 0, f = 1MHz
–
11
20
pF
Collector Output Capacitance
Cob
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. Pulse measurement.
.339
(8.62)
Max
Seating Plane
.026 (.66)
Dia Max
.512
(13.0)
Min
E C B
.100 (2.54)
.200
(5.08)
Max
.240 (6.09) Max