NTE3104 Opto Interrupter Module Photo Reflector, NPN Transistor Output Description: The NTE3104 is a subminiature photo reflector whose GaAs infrared emitting diode and silicon transistor are assembled in the same package allowing for easy installation and handling. The NTE3104 has an excellent S/N ratio (more than 40dB) and contains a built–in filter for cutting visible light. Typical applications for the NTE3104 include strobe detection in audio turntables, tape end detection, automatic vending machines, and various other automatic control units. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Emitter Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW Detector Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW Coupled Total Power Dissipation, Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Isolation Voltage (Note 2), Viso . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to +90°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +100°C Note 1. Pulse Width ≤ 10µs, Duty Ratio: 0.01 Note 2. R.H. = 40% to 60% for one minute. Electro–Optical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Emitter Forward Voltage VF IF = 4mA – 1.08 1.15 V Pulse Forward Voltage VFP IFP = 500mA – 1.4 – V Reverse Current IR VR = 6V – – 1 µA Peak Wavelength λ IF = 50mA, TA = +25°C – 940 – nm Spectral Half Bandwidth ∆λ IF = 50mA, TA = +25°C – 50 – nm Capacitance Ct VR = 0, f = 1MHz – 35 – pF VCE = 2V – – 20 nA Detector Dark Current ICEO Collector–Emitter Voltage V(BR)CEO iC = 100µA 25 – – V Emitter–Collector Voltage V(BR)ECO iC = 100µA 6 – – V IF = 4mA, VCE = 2V, d = 1mm 12 – 125 µA ICEOD IF = 4mA, VCE = 2V – – 50 nA Rise Time tr – 70 500 µs Fall Time tf VCE = 2V, IF = 4mA, RL = 1kΩ, Ω d = 1mm – 50 500 µs R.H. = 40% to 60%, 250V at E–D – 1000 – MΩ Coupled Output Current Collector Dark Current Isolation Resistance IO Riso .126 (3.2) .157 (4.0) .118 (3.0) .472 (12.0) Min .070 (1.8) Cathode Anode .039 (1.0) Collector Emitter