NTE NTE3081

NTE3081
Optoisolator
NPN Transistor Output
Description:
The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor
in a low cost plastic package with lead spacing compatible with dual–in–line packages.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Total Device
Surge Isolation Voltage (Input to Output), VISO
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6000V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4242V
Steady–State Isolation Voltage (Input to Output), VISO
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4500V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3200V
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +85°C
Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Infrared Emitting Diode (Emitter)
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67mW/°C
Phototransistor (Detector)
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5mW/°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Infrared Emitting Diode
Reverse Breakdown Voltage
V(BR)R
IR = 10µA
4
–
–
V
Forward Voltage
VF
IF = 60mA
–
–
1.7
V
Reverse Current
IR
VR = 3V
–
–
1.0
µA
Capacitance
Ci
V = 0, f = 1MHz
–
30
–
pF
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IF = 0
30
–
–
V
Emitter–Collector Breakdown Voltage V(BR)ECO IE = 100µA, IF = 0
6
–
–
V
Collector Dark Current
ICEO
VCE = 10V, IF = 0
–
5
100
nA
Capacitance
Cce
VCE = 5V, f = 1MHz
–
3.3
–
pF
CTR
IF = 10mA, VCE = 10V
20
–
–
%
VCE(sat)
IF = 10mA, IC = 500mA
–
0.1
0.4
V
100
–
–
GΩ
Phototransistor
Coupled Characteristics
DC Current Transfer Ratio
Collector–Emitter Saturation Voltage
Isolation Resistance
RIO
Input to Output Voltage = 500VDC,
Note 1
Input to Output Capacitance
Cio
Input to Output Voltage = 0,
f = 1MHz, Note 1
–
0.5
–
pF
Turn–On Time
ton
VCE = 10V, IC = 2mA, RL = 100Ω
–
9
–
µs
VCE = 5V, IF = 10mA, RL = 10kΩ
–
4
–
µs
VCE = 10V, IC = 2mA, RL = 100Ω
–
6.5
–
µs
VCE = 5V, IF = 10mA, RL = 10kΩ
–
165
–
µs
Turn–Off Time
toff
Note 1. Measured with input diode leads shorted together, and output detector leads shorted together.
+
D
E
+
.375 (9.52)
Max
.250 (6.35)
Max
.025 (.635)
Anode
Cathode
1
2
4 Emitter
.350
(8.89)
Max
3 Collector
.025
(.635)
Seating Plane
.300
(7.62)
Min
.020 (.508)
Square Typ
.300 (7.62)
.100 (2.54)