NTE NTE601

NTE601
Silicon Varistor
Temperature Compensating Diode
Features:
D High reliability planar chip and glass sealing
D Low IR
D Large PD
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Maximum Forward Current, IFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
–
10
µA
Reverse Current
IR
VR = 6V
Forward Voltage
VF
IF = 1.5mA
0.59
–
0.64
V
IF = 50mA
–
–
1.1
V
IF = 1.5mA
–
2.0
–
mV/°C
Forward Voltage Change with Respect to Temperature
–∆VF/∆T
.099 (2.51) Max
.099 (2.51) Max
.080 (2.03)
Dia Max
.022 (0.56) Max
.500 (12.7)
Min
.118
(3.0)
Max
.500 (12.7)
Min
Color Band Denotes Cathode