LS4150 Fast Switching Diode Features Silicon Epitaxial Planar Diode Electrical data identical with the device 1N4150 Quadro Melf package Applications High speed switch and general purpose use in computer and industrial applications Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Test Condition Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp= 1 us Forward current Average forward current VR = 0 Power dissipation Thermal Characteristics Parameter Junction ambient ( Tamb=25oC unless otherwise specified ) Symbol Value Unit VRRM 50 V VR 50 V IFSM 4 A IF 600 mA IFAV 300 mA PV 500 mW ( Tamb=25oC unless otherwise specified ) Test Condition on PC board 50 mm X 50mm X 1.6mm Junction temperature Stroage temperature range Symbol Value Unit RthJA 500 K/W Tj 175 o C Tstg -65 to +175 o C Electrical Characteristics Parameter Forward voltage ( Tamb=25oC unless otherwise specified ) Test Condition Symbol IF=1mA IF=10mA IF=50mA VF IF=100mA IF=200mA Reverse current VR=50V VR=50V, Tj=150oC Min. 0.54 Max. Unit 0.62 0.66 0.74 0.76 0.86 0.82 0.92 0.87 IR Typ. V 1.0 100 100 nA Diode capacitance VR=0, f=1MHz, VHF=50mV CD 2.5 pF Reverse recovery time IF=IR=10 to 100mA, iR=0.1x IR, RL=100Ω trr 4 ns 660 Typical characteristics ( Tamb=25oC unless otherwise specified ) Package Dimensions in mm (inches) 661