NTE NTE6400A

NTE6400 & NTE6400A
Unijunction Transistor
Description:
The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable
“N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,
timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conventional silicon or germanium transistors.
These devices are intended for applications where circuit economy is of primary importance.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
RMS Power Dissipation, PD
Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW
Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9mW/°C
RMS Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Emitter Current (TJ = +150°C), IE(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage (TJ = +150°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Interbase Voltage, VBB
NTE6400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
NTE6400A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V
Operating Temperature Range, Topr
Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +140°C
Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16°C/mW
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Intrinsic Standoff Ratio
NTE6400
NTE6400A
Interbase Resistance
Modulated Interbase Current
Emitter Reverse Current
NTE6400
NTE6400A
Symbol
η
RBBO
IB2(MOD)
IEO
Test Conditions
VBB = 10V, Note 1
VBB = 3V, IE = 0, Note 1
VBB = 10V, IE = 50mA
VB2E = 30V, IB1 = 0
Min
Typ
Max
Unit
0.4
54
–
–
0.80
0.67
4
–
12
kΩ
6.8
–
30
mA
–
–
–
–
12
1
µA
Peak Point Emitter Current
IP
VBB = 25V
–
–
25
µA
Valley Point Current
IV
VBB = 20V, RB2 = 100Ω
8
–
–
mA
3
–
–
V
Base–One Peak Pulse Voltage
VOB1
Note 1. The intristic standoff ratio, η, is essentially constant with temperature and interbase voltage. It is defined by the following equation:
200
Tj
= Peak point emitter voltage
= Interbase voltage
= Junction Temperature (Degrees Kelvin)
VP = η VBB +
Where VP
VBB
Tj
Note 2. The interbase resistance is nearly ohmic and increases with temperature in a well–defined
manner. The temperature coefficient at +25°C is approximately 0.8%/°C.
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260 (6.6)
Max
.500 (12.7)
Min
.018 (0.45) Dia
.210 (5.33) Dia Max
B2
B1
45°
Emitter
.031 (.793)