NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter–Base VOltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise spcified) Parameter Symbol Test Conditions Min Typ Max Unit 150 – – V OFF Characteristics Collector–Emitter Sustaining Voltage V(BR)CEO(sus) IC = 100mA Emitte Cutoff Current IEBO VEB = 10V – – 250 µA Collector Cutoff Current ICEX VCE = 150V, VBE = –1.5V – – 2 mA VCE = 150V, VBE = –1.5V, TC = +150°C – – 20 mA hFE VCE = 3V, IC = 10A 10 – 50 VCE(sat) IC = 10A, IB = 1.5A – – 1.5 V VBE IC = 10A, IB = 1.5A – – 2.5 V ON Characteristics (Note 1) DC Current Gain Collector Saturation Voltage Base–Emitter Voltage Note 1. Pulse test: Pulse Width = 300µs, Duy Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise spcified) Parameter Symbol Test Conditions Min Typ Max Unit 0.6 – – – – 3.5 µs – – 12.0 µs Dynamic Characteristics Small–Signal Current Gain hfe VCE = 3V, IC = 10A, f = 1MHz Turn–On Time ton Turn–Off Time toff VCC = 30V, IC = 10A, IB1 = 1.5A, IB2 = 1.5A Rise Time tr – – 3.5 µs Storage Time ts – – 6.0 µs Fall Time tf – – 6.0 µs Base .865 (21.95) .500 (12.7) Collector/Stud Emitter .760 (19.3) Dia .083 (2.1) Dia .083 (2.1) Dia .984 (25.0) .129 (3.3) 5/16–24 UNF .503 (12.6) .105 (2.65) Max .477 (12.1)