NTE75 Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount) Description: The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for power supply, pulse amplifier, and similar high efficiency power switching applications. Features: D Fast Switching: tr, tf = 300ns (Max) D Low Saturation Voltage: 250mV max @ 1A Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation, PD TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA 110 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100mA, Note 1 80 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA 8 – – V ICEO VCE = 60V – – 100 µA ICEX VCE = 110V, VEB = 500mV – – 10 µA Collector–Base Cutoff Current ICBO VCB = 80V – – 0.4 µA Emitter–Base Cutoff Current IEBO VEB = 6V – – 0.4 µA Collector–Emitter Cutoff Current Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol DC Current Gain (Note 1) hFE Collector Saturation Voltage VCE(sat) Test Conditions Min Typ Max Unit VCE = 5V, IC = 50mA 40 – – VCE = 5V, IC = 1A 40 – 120 VCE = 5V, IC = 1A, TA = –65°C 15 – – VCE = 5V, IC = 5A 15 – – IC = 1A, IB = 100mA, Note 1 – – 0.25 V IC = 5A, IB = 500mA, Note 1 – – 1.5 V Base Saturation Voltage VBE(sat) IC = 1A, IB = 100mA, Note 1 – – 1.2 V Base ON Voltage VBE(on) VCE = 2V, IC = 1A, Note 1 – – 1.2 V AC Current Gain hFE VCE = 5V, IC = 50mA, f = 1kHz 40 – 120 fT VCE = 10V, IC = 1A, f = 10MHz 20 – 120 MHz VCE = 10V, IE = 0, f = 1MHz – – 150 pF VCC = 20V, IC = 1A, IB1 = –IB2 = 100mA, Pulse Width = 2µs, Duty Cycle ≤ 2%, Source Impedance = 50Ω Ω – – 60 ns – – 300 ns – – 1.7 µs – – 300 ns Current Gain–Bandwidth Product Output Capacitance Cob Delay Time td Rise Time tr Storage Time ts Fall Time tf Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%. Base .190 (4.82) Dia .432 (10.95) Emitter Collector/ Stud .347 (8.82) Dia .760 (19.3) Max .370 (9.39) .115 (2.92) 10–32 NF–2A .078 (1.97) Max .420 (10.66)