NTE NTE902

NTE902
Integrated Circuit
Operational Transconductance Amplifier
Description:
The NTE902 has a differential input and a single–ended, push–pull, class A output. In addition there
is a bias input for linear gain control, whose transconductance (gm) is directly proportional to the amplifier bias current (IABC).
Features:
• Slew rate (unity gain, compensated): 50V/µs
•
•
Flexible supply voltage range: ±2V to ±15V
Fully adjustable gain: 0 to gm RL limit
Applications:
• Sample and hold
•
Multiplex
•
•
Voltage follower
Multiplier
•
Comparator
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
DC Supply Voltage (between V+ and V– Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to V–
Input Signal Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Amplifier Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA
Output Short–Circuit Duration (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . No limitation
Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125mW
Operating Temperature Range, Top . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering), TL
(At distance 1/16 ± 1/32in. (1.59 ± 0.79mm) from case for 10s max) . . . . . . . . . . . . . +300°C
Note 1. Short circuit may be applied to GND or to either supply.
Electrical Characteristics: (V+ = 15V, V– = –15V, IABC = 500µA, TA = +25°C unless otherwise
specified)
Parameter
Min
Typ
Max
Unit
–
0.4
5.0
mV
–
–
6.0
IIO
–
0.12
0.6
µA
II
–
2
5
µA
–
–
7
6700
9600
13000
TA = 0 to +70°C
5400
–
–
RL = 0
350
500
650
RL = 0, TA = 0 to +70°C
300
–
–
RL = ∞
12.0
13.5
–
V–OM
–12
–14.4
–
Amplifier Supply Current
IA
0.8
1
1.2
mA
Device Dissipation
PD
24
30
36
mW
∆VIO/∆V+
–
–
150
µV/V
∆VIO/∆V–
–
–
150
CMRR
80
110
–
dB
VICR
12 to
–12
13.6 to
–14.6
–
V
RI
10
26
–
kΩ
VABC
–
0.71
–
V
–
75
–
V/µs
–
50
–
–
2
–
MHz
Input Offset Voltage
Symbol
Test Conditions
VIO
TA = 0 to +70°C
Input Offset Current
Input Bias Current
TA = 0 to +70°C
Forward Transconductance
(Large signal)
Peak Output Current
Peak Output Voltage:
Positive
Negative
Input Offset Voltage Sensitivity:
Positive
Negative
Common–Mode Rejection Ratio
Common–Mode Input Voltage
Range
Input Resistance
Amplifier Bias Voltage
Slew Rate:
Maximum (uncompensated)
gm
 IOM 
V+OM
µA
V
SR
Unity gain (compensated)
Open–Loop Bandwidth
µmho
BWOL
Input Capacitance
CI
f = 1MHz
–
3.6
–
pF
Output Capacitance
CO
f = 1MHz
–
5.6
–
pF
Output Resistance
RO
–
15
–
MΩ
–
0.024
–
pF
Input–to–Output Capacitance
CI–O
f = 1MHz
Pin Connection Diagram
Top View
Amplifier Bias Input
5
Output
V (+)
4
6
3
7
N.C./Tab
V (–)/Case
2
8
Non–Inverting Input
Inverting Input
1
N.C.
.370 (9.39) Dia Max
.335 (8.52) Dia Max
.177 (4.5)
Max
.492
(12.5)
Min
.018 (0.45) Dia Typ
3
2
4
1
5
8
45°
7
6
.032 (0.82)
.200 (5.06)
Dia