FEDR27V852E-01-01 1Semiconductor MR27V852E This version: Jan. 2001 524,288–Word × 16–Bit or 1,048,576–Word × 8–Bit 8–Word x 16-Bit or 16–Word x 8-Bit Page Mode One Time PROM GENERAL DESCRIPTION The MR27V852E is a 8 Mbit electrically One Time Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 524,288-word × 16-bit and 1,048,576-word × 8-bit by the state of the BYTE pin. The MR27V852E supports high speed asynchronous read operation using a single 3.3V power supply. FEATURES · 524,288-word × 16-bit/1,048,576-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit · +3.3 V power supply · Access time Random access mode 100 ns MAX Page access mode 30 ns MAX · Operating current 80 mA MAX · Standby current 50 µA MAX · Input/Output TTL compatible · Tri-state output · Packages: 42-pin plastic DIP (DIP42-P-600-2.54) (Product Name : MR27V852ERA) 42-pin plastic SOJ (SOJ42-P-400-1.27) (Product Name : MR27V852EJA) 1/13 FEDR27V852E-01-01 1Semiconductor MR27V852E PIN CONFIGURATION (TOP VIEW) A18 1 42 NC A18 1 42 NC A17 2 41 A8 A17 2 41 A8 A7 3 40 A9 A7 A6 4 39 A10 A6 4 39 A10 A5 5 38 A11 A5 5 38 A11 A4 6 37 A12 A4 6 37 A12 A3 7 36 A13 A3 7 36 A13 A2 8 35 A14 A2 8 35 A14 A1 9 34 A15 A1 9 34 A15 A0 10 33 A16 A0 10 33 A16 CE 11 32 BYTE/ VPP CE 11 32 BYTE/ VPP VSS 12 31 VSS 40 A9 3 31 VSS VSS 12 OE 13 30 D15/A–1 OE 13 30 D15/A–1 D0 14 29 D7 D0 14 29 D7 D8 15 28 D14 D8 15 28 D14 D1 16 27 D6 D1 16 27 D6 D9 17 26 D13 D9 17 26 D13 D2 18 25 D5 D2 18 25 D5 D10 19 24 D12 D3 20 23 D4 D11 21 24 D12 D10 19 D3 20 22 VCC 23 D4 22 VCC D11 21 42-pin DIP 42-pin SOJ Pin name Functions D15/A–1 Data output/Address input A0 to A18 Address input D0 to D14 Data output CE Chip enable OE Output enable BYTE/VPP VCC Mode switch/Program power supply voltage Power supply voltage VSS GND NC Non connection 2/13 FEDR27V852E-01-01 1Semiconductor MR27V852E BLOCK DIAGRAM A–1 × 8/× 16 Switch BYTE/VPP CE OE PGM Row Decoder OE Memory Cell Matrix 524,288 × 16-Bit or 1,048,576× 8-Bit Multiplexer Column Decoder Address Buffer A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 CE Output Buffer D0 D2 D1 D4 D3 D6 D5 D8 D7 D10 D9 D12 D11 D14 D13 D15 In 8-bit output mode, these pins are placed in a high-Z state and pin D15 functions as the A-1 address pin. FUNCTION TABLE Mode CE OE BYTE/VPP Read (16-Bit) L L H Read (8-Bit) L L L Output disable L H Standby H ∗ Program L H Program inhibit H H Program verify H L H L VCC D0 to D7 D8 to D14 D15/A–1 DOUT DOUT 3.3 V H Hi–Z Hi–Z Hi–Z L L/H ∗ ∗ DIN 9.75 V 4.0 V Hi–Z DOUT ∗: Don’t Care (H or L) 3/13 FEDR27V852E-01-01 1Semiconductor MR27V852E ABSOLUTE MAXIMUM RATINGS Parameter Symbol Operating temperature under bias Storage temperature Condition Ta — Tstg Input voltage VI Output voltage VO Power supply voltage VCC Program power supply voltage VPP Power dissipation per package PD relative to VSS Value Unit 0 to 70 °C –55 to 125 °C –0.5 to VCC+0.5 V –0.5 to VCC+0.5 V –0.5 to 5 V –0.5 to 11.5 V 1.0 W — RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70°C) Parameter Symbol VCC power supply voltage VCC VPP power supply voltage VPP Input “H” level VIH Input “L” level VIL Condition VCC = 3.0 to 3.6 V Min. Typ. Max. Unit 3.0 — 3.6 V –0.5 — VCC+0.5 V 2.2 — VCC+0.5∗ V –0.5∗∗ — 0.6 V Voltage is relative to VSS. ∗ : Vcc+1.5 V(Max.) when pulse width of overshoot is less than 10 ns. ∗∗ : -1.5 V(Min.) when pulse width of undershoot is less than 10 ns. 4/13 FEDR27V852E-01-01 1Semiconductor MR27V852E ELECTRICAL CHARACTERISTICS DC Characteristics (VCC = 3.3 V ±0.3 V, Ta = 0 to 70°C) parameter Input leakage current Symbol Condition Min. Typ. Max. Unit ILI VI = 0 to VCC — — 10 µA ILO VO = 0 to VCC — — 10 µA VCC power supply current ICCSC CE = VCC — — 50 µA (Standby) ICCST CE = VIH — — 1 mΑ ICCA CE = VIL, OE = VIH tc = 100 ns — — 80 mA VPP power supply current IPP VPP = VCC — — 10 µA Input “H” level VIH — 2.2 — VCC+0.5∗ V Input “L” level VIL — –0.5∗∗ — 0.6 V Output “H” level VOH IOH = –2 mA 2.4 — — V Output “L” level VOL IOL = 2.1 mA — — 0.4 V Output leakage current VCC power supply current (Read) Voltage is relative to VSS. ∗ : Vcc+1.5 V(Max.) when pulse width of overshoot is less than 10 ns. ∗∗ : -1.5 V(Min.) when pulse width of undershoot is less than 10 ns. AC Characteristics (VCC = 3.3 V ±0.3 V, Ta = 0 to 70°C) Parameter Address cycle time Symbol Condition Min. Max. Unit tC — 100 — ns Address access time tACC CE = OE = VIL — 100 ns Page cycle time tPC — 30 — ns Page access time tPAC — — 30 ns CE access time tCE OE = VIL — 100 ns OE access time Output disable time Output hold time tOE CE = VIL — 30 ns tCHZ OE = VIL 0 30 ns tOHZ CE = VIL 0 25 ns tOH CE = OE = VIL 0 — ns Measurement conditions Input signal level-------------------------------- 0 V/3 V Input timing reference level ------------------ 0.8 V/2.0 V Output load -------------------------------------- 100 pF Output timing reference level---------------- 0.8 V/2.0 V 5/13 FEDR27V852E-01-01 1Semiconductor MR27V852E Timing Chart (Read Cycle) Random Access Mode Read Cycle tC tC Address tOH tACC tCE CE tCHZ tOE tOH OE tOHZ tACC Dout Valid Data Valid Data Hi-Z Hi-Z Page Access Mode Read Cycle tC A3 to A18 tPC tPC A-1 to A2 (Byte mode) A0 to A2 (Word mode) tOH tCE CE tOE tCHZ OE tACC tPAC tPAC tOHZ Dout Hi-Z Hi-Z 6/13 FEDR27V852E-01-01 1Semiconductor MR27V852E ELECTRICAL CHARACTERISTICS (PROGRAMMING OPERATION) DC Characteristics (Ta = 25°C ± 5°C) Parameter Symbol Condition Min. Typ. Max. Unit ILI VI = VCC+0.5 V — — 10 µA VPP power supply current (Program) IPP2 CE = VIL — — 50 mA VCC power supply current ICC — — — 80 mA Input “H” level VIH — 3.0 — VCC+0.5 V Input leakage current Input “L” level VIL — –0.5 — 0.8 V Output “H” level VOH IOH = –400 µA 2.4 — — V Output “L” level VOL IOL = 2.1 mA — — 0.45 V Program voltage VPP — 9.5 9.75 10.0 V VCC power supply voltage (Program) VCC — 3.9 4.0 4.1 V VCC power supply voltage (Verify1) VCV1 — 2.9 3.0 3.1 V VCC power supply voltage (Verify2) VCV2 — 3.5 3.6 3.7 V Voltage is relative to VSS. AC Characteristics (VCC = 4.0 V ±0.1 V, BYTE/VPP = 9.75 V ±0.25 V, Ta = 25°C ±5°C) Parameter Symbol Condition Min. Typ. Max. Unit Address set-up time tAS — 100 — — ns OE set-up time tOES — 2 — — µs Data set-up time tDS — 100 — — ns Address hold time tAH — 2 — — µs Data hold time tDH — 100 — — ns Output float delay time from OE tOHZ — 0 — 100 ns VPP voltage set-up time tVS — 2 — — µs Program pulse width tPW — 9 10 11 µs Data valid from OE tOE — — — 100 ns Address hold from OE high tAOH — 0 — — ns Pin Check Function Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer. Setting up address as following condition call the preprogrammed codes on device outputs. (VCC = 3.3 V ±0.1 V, CE = VIL, OE = VIL, BYTE/VPP = VIH, Ta = 25°C ±5°C) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 DATA 0 1 0 1 0 1 0 1 0 VH∗ 0 1 0 1 0 1 0 0 1 FF00 1 ∗ 1 0 1 0 1 0 1 1 0 00FF 1 0 1 0 1 0 1 0 VH Other conditions FFFF ∗: VH = 8 V ± 0.25 V 7/13 FEDR27V852E-01-01 1Semiconductor MR27V852E Consecutive Programming Waveforms A0 to A18 tAS tAH CE tPW High OE tDH tDS Din D0 to D15 Din tVS BYTE/Vpp Consecutive Program Verify Waveforms A0 to A18 High CE tACC tAHO OE tOE D0 to D15 BYTE/Vpp tOHZ Dout Dout 9.75 V 8/13 FEDR27V852E-01-01 1Semiconductor MR27V852E Program and Program Verify Cycle Waveforms A0 to A18 tAS tAHO CE tPW tOES OE tOHZ tDH tDS tOE tOHZ Dout Din D0 to D15 9.75 V BYTE/Vpp Pin Capacitance (VCC = 3.3 V, Ta = 25°C, f = 1 MHz) Parameter Symbol Input CIN1 BYTE/VPP CIN2 Output COUT Condition VI = 0 V VO = 0 V Min. Typ. Max. — — 10 — — 120 — — Unit pF 10(12) ( ):DIP only 9/13 FEDR27V852E-01-01 1Semiconductor MR27V852E Programming/Verify Flow Chart Programming Verify Start Start Pin Check Pin Check NG Bad Insertion NG Bad Insertion PASS PASS Address = First Location Address = First Location VCC = 4.0 V VCC = 3.0 V/VPP = 3.0 V (Verify1) VPP = 9.75 V NG Verify PASS Program 10 µs VCC = 3.6 V/VPP = 3.6 V (Verify2) Increment Address NO Last Address? NG Verify YES PASS Address = First Location Device Passed Device Failed X=0 Verify(One Word) NG X = X+1 PASS Increment Address NO YES Last Address? X = 2? YES NO VCC = 3.0 V/VPP = 3.0 V (Verify1) Verify Program 10 µs NG PASS Device Passed Device Failed 10/13 FEDR27V852E-01-01 1Semiconductor MR27V852E PACKAGE DIMENSIONS (Unit: mm) DIP42-P-600-2.54 5 Package material Lead frame material Pin treatment Package weight (g) Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 6.20 TYP. 2/Dec. 11, 1996 11/13 FEDR27V852E-01-01 1Semiconductor MR27V852E (Unit: mm) SOJ42-P-400-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight (g) Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.86 TYP. 5/Dec. 5, 1996 Notes for Mounting the Surface Mount Type Package The surface mount type packages are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 12/13 FEDR27V852E-01-01 1Semiconductor MR27V852E NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-to-date. 2. The outline of action and examples for application circuits described herein have been chosen as an explanation for the standard action and performance of the product. When planning to use the product, please ensure that the external conditions are reflected in the actual circuit, assembly, and program designs. 3. When designing your product, please use our product below the specified maximum ratings and within the specified operating ranges including, but not limited to, operating voltage, power dissipation, and operating temperature. 4. Oki assumes no responsibility or liability whatsoever for any failure or unusual or unexpected operation resulting from misuse, neglect, improper installation, repair, alteration or accident, improper handling, or unusual physical or electrical stress including, but not limited to, exposure to parameters beyond the specified maximum ratings or operation outside the specified operating range. 5. Neither indemnity against nor license of a third party’s industrial and intellectual property right, etc. is granted by us in connection with the use of the product and/or the information and drawings contained herein. No responsibility is assumed by us for any infringement of a third party’s right which may result from the use thereof. 6. The products listed in this document are intended for use in general electronics equipment for commercial applications (e.g., office automation, communication equipment, measurement equipment, consumer electronics, etc.). These products are not authorized for use in any system or application that requires special or enhanced quality and reliability characteristics nor in any system or application where the failure of such system or application may result in the loss or damage of property, or death or injury to humans. Such applications include, but are not limited to, traffic and automotive equipment, safety devices, aerospace equipment, nuclear power control, medical equipment, and life-support systems. 7. Certain products in this document may need government approval before they can be exported to particular countries. The purchaser assumes the responsibility of determining the legality of export of these products and will take appropriate and necessary steps at their own expense for these. 8. No part of the contents contained herein may be reprinted or reproduced without our prior permission. Copyright 2001 Oki Electric Industry Co., Ltd. 13/13