OKI MSM5118165F

FEDD5118165F-01
1Semiconductor
MSM5118165F
This version: June. 2000
Previous version : 
1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM5118165F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MSM5118165F is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP.
FEATURES
· 1,048,576-word × 16-bit configuration
· Single 5V power supply, ±10% tolerance
· Input : TTL compatible, low input capacitance
· Output : TTL compatible, 3-state
· Refresh : 1024 cycles/16ms
· Fast page mode with EDO, read modify write capability
· CAS before RAS refresh, hidden refresh, RAS-only refresh capability
· Packages
(SOJ42-P-400-1.27)
42-pin 400mil plastic SOJ
(Product : MSM5118165F-xxJS)
50/44-pin 400mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM5118165F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
MSM5118165F
tRAC
tAA
tCAC
tOEA
Cycle Time
(Min.)
50ns
60ns
70ns
25ns
30ns
35ns
13ns
15ns
20ns
13ns
15ns
20ns
84ns
104ns
124ns
Power Dissipation
Operating
(Max.)
743mW
688mW
633mW
Standby
(Max.)
5.5mW
1/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
PIN CONFIGURATION (TOP VIEW)
VCC 1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
VCC 6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
NC 12
WE 13
RAS 14
NC 15
NC 16
A0 17
A1 18
A2 19
A3 20
VCC 21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
42-Pin Plastic
SOJ
VSS
DQ16
DQ15
DQ14
DQ13
VSS
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS
VCC 1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
VCC 6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
50
49
48
47
46
45
44
43
42
41
40
VSS
DQ16
DQ15
DQ14
DQ13
VSS
DQ12
DQ11
DQ10
DQ9
NC
NC 15
NC 16
WE 17
RAS 18
NC 19
NC 20
A0 21
A1 22
A2 23
A3 24
VCC 25
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS
50/44-Pin Plastic TSOP
(K Type)
Pin Name
Function
A0–A9
Address Input
RAS
Row Address Strobe
LCAS
Lower Byte Column Address Strobe
UCAS
Upper Byte Column Address Strobe
DQ1–DQ16
Data Input/Data Output
OE
Output Enable
WE
Write Enable
VCC
Power Supply (5V)
VSS
Ground (0V)
NC
No Connection
Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must
be provided to every VSS pin.
2/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
BLOCK DIAGRAM
WE
OE
Timing
Generator
RAS
I/O
Controller
LCAS
UCAS
I/O
Controller
10
10
Row
Address
Buffers
Output
Buffers
8
Input
Buffers
8
8
Input
Buffers
8
8
Output
Buffers
8
DQ1-DQ8
Column
Address
Buffers
10
Internal
Address
Counter
A0-A9
8
Refresh
Control Clock
10
Row
Decoders
Column Decoders
Sense Amplifiers
Word
Memory
Drivers
Cells
16
I/O
Selector
16
DQ9-DQ16
8
VCC
On Chip
VBB Generator
On Chip
IVCC Generator
VSS
FUNCTION TABLE
Input Pin
DQ Pin
Function Mode
RAS
LCAS
UCAS
WE
OE
DQ1-DQ8
DQ9-DQ16
H
*
*
*
*
High-Z
High-Z
Standby
L
H
H
*
*
High-Z
High-Z
Refresh
L
L
H
H
L
DOUT
High-Z
Lower Byte Read
L
H
L
H
L
High-Z
DOUT
Upper Byte Read
L
L
L
H
L
DOUT
DOUT
Word Read
L
L
H
L
H
DIN
Don’t Care
Lower Byte Write
L
H
L
L
H
Don’t Care
DIN
Upper Byte Write
L
L
L
L
H
DIN
DIN
Word Write
L
L
L
H
H
High-Z
High-Z

* : “H” or “L”
3/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
–0.5 to VCC+ 0.5
V
Voltage VCC Supply relative to VSS
VCC
–0.5 to 7
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
–55 to 150
°C
*: Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Symbol
Min.
Typ.
Max.
Unit
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
Input High Voltage
VIH
2.4

VCC + 0.5
Input Low Voltage
VIL
− 0.5*2

0.8
*1
V
V
Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which VCC is applied).
*2. The input voltage is VSS − 2.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which VSS is applied).
PIN CAPACITANCE
(Vcc = 5V ± 10%, Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Min.
Typ.
Min.
Unit
CIN1
—
—
5
pF
(RAS, LCAS, UCAS, WE, OE)
CIN2
—
—
7
pF
Output Capacitance (DQ1 - DQ16)
CI/O
—
—
7
pF
Input Capacitance (A0 - A9)
Input Capacitance
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FEDD5118165F-01
1Semiconductor
MSM5118165F
DC CHARACTERISTICS
(VCC = 5V ± 10%, Ta = 0 to 70°C)
Parameter
Symbol
Condition
Min.
Max.
Min.
Max.
2.4
VCC
2.4
VCC
2.4
VCC
V
0
0.4
0
0.4
0
0.4
V
All other pins not
under test = 0V
− 10
10
− 10
10
− 10
10
µA
DQ disable
− 10
10
− 10
10
− 10
10
µA

135

125

115
mA
1,2
RAS, CAS = VIH

2

2

2
RAS, CAS
≥ VCC − 0.2V


1
1

mA
1
1

135

125

115
mA
1,2

5

5

5
mA
1

135

125

115
mA
1,2

120

110

100
mA
1,3
IOH = −5.0mA
Output Low Voltage
VOL
IOL = 4.2mA
0V ≤ VI ≤ 6.5V;
Input Leakage
Current
ILI
Output Leakage
Current
ILO
Average Power
Supply Current
ICC1
(Operating)
ICC2
(Standby)
ICC3
(CAS before RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
RAS, CAS cycling,
tRC = Min.
CAS = VIH,
tRC = Min.
RAS = VIH,
ICC5
(Standby)
Average Power
Supply Current
0V ≤ VO ≤ VCC
RAS cycling,
(RAS-only Refresh)
Power Supply
Current
MSM5118165
F-70
Unit Note
Max.
VOH
Average Power
Supply Current
MSM5118165
F-60
Min.
Output High Voltage
Power Supply
Current
MSM5118165
F-50
CAS = VIL,
DQ = enable
ICC6
RAS = cycling,
CAS before RAS
RAS = VIL,
ICC7
CAS cycling,
tHPC = Min.
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while RAS = VIL.
3. The address can be changed once or less while CAS = VIH.
5/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
AC CHARACTERISTICS (1/2)
(VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3
MSM5118165
F-50
MSM5118165
F-60
MSM5118165
F-70
Min.
Max.
Min.
Max.
Min.
Max.
tRC
84

104

124

ns
Read Modify Write Cycle Time
tRWC
110

135

160

ns
Fast Page Mode Cycle Time
tHPC
20

25

30

ns
Fast Page Mode Read Modify Write
tHPRWC
Cycle Time
58

68

78

ns
Access Time from RAS
tRAC

50

60

70
ns
4, 5, 6
Access Time from CAS
tCAC

13

15

20
ns
4,5
Access Time from Column Address
tAA

25

30

35
ns
4,6
Access Time from CAS Precharge
tCPA

30

35

40
ns
4,13
Access Time from OE
tOEA

13

15

20
ns
4
Output Low Impedance Time from
CAS
tCLZ
0

0

0

ns
4
Data Output Hold After CAS Low
tDOH
5

5

5

ns
CAS to Data Output Buffer Turnoff Delay Time
tCEZ
0
13
0
15
0
20
ns
7,8
RAS to Data Output Buffer Turnoff Delay Time
tREZ
0
13
0
15
0
20
ns
7,8
OE to Data Output Buffer Turn-off
Delay Time
tOEZ
0
13
0
15
0
20
ns
7
WE to Data Output Buffer Turnoff Delay Time
tWEZ
0
13
0
15
0
20
ns
7
Transition Time
tT
1
50
1
50
1
50
ns
3
Refresh Period
tREF

16

16

16
ms
RAS Precharge Time
tRP
30

40

50

ns
RAS Pulse Width
tRAS
50
10,000
60
10,000
70
10,000
ns
RAS Pulse Width
(Fast Page Mode with EDO)
tRASP
50
100,000
60
100,000
70
100,000 ns
RAS Hold Time
tRSH
7

10

13

ns
RAS Hold Time referenced to OE
tROH
7

10

13

ns
CAS Precharge Time
(Fast Page Mode with EDO)
tCP
7

10

10

ns
CAS Pulse Width
tCAS
7
10,000
10
10,000
13
10,000
ns
CAS Hold Time
tCSH
35

40

45

ns
CAS to RAS Precharge Time
tCRP
5

5

5

ns
13
30

35

40

ns
13
Parameter
Random Read or Write Cycle Time
Symbol
RAS Hold Time from CAS Precharge tRHCP
Unit
Note
15
6/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
AC CHARACTERISTICS (2/2)
(VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3
Parameter
Symbol
MSM5118165
F-50
MSM5118165
F-60
MSM5118165
F-70
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Note
OE Hold Time from CAS
(DQ Disable)
tCHO
5

5

5

ns
RAS to CAS Delay Time
tRCD
11
37
14
45
14
50
ns
5
RAS to Column Address Delay Time
tRAD
9
25
12
30
12
35
ns
6
Row Address Set-up Time
tASR
0

0

0

ns
Row Address Hold Time
tRAH
7

10

10

ns
Column Address Set-up Time
tASC
0

0

0

ns
12
Column Address Hold Time
tCAH
7

10

13

ns
12
Column Address to RAS Lead Time
tRAL
25

30

35

ns
Read Command Set-up Time
tRCS
0

0

0

ns
12
Read Command Hold Time
tRCH
0

0

0

ns
9,12
Read Command Hold Time
referenced to RAS
tRRH
0

0

0

ns
9
Write Command Set-up Time
tWCS
0

0

0

ns
10,12
Write Command Hold Time
tWCH
7

10

13

ns
12
Write Command Pulse Width
tWP
7

10

10

ns
WE Pulse Width (DQ Disable)
tWPE
7

10

10

ns
OE Command Hold Time
tOEH
7

10

13

ns
OE Precharge Time
tOEP
7

10

10

ns
OE Command Hold Time
tOCH
7

10

10

ns
Write Command to RAS Lead Time
tRWL
7

10

13

ns
Write Command to CAS Lead Time
tCWL
7

10

13

ns
14
Data-in Set-up Time
tDS
0

0

0

ns
11,12
Data-in Hold Time
tDH
7

10

13

ns
11,12
OE to Data-in Delay Time
tOED
13

15

20

ns
CAS to WE Delay Time
tCWD
30

34

44

ns
10
Column Address to WE Delay Time
tAWD
42

49

59

ns
10
RAS to WE Delay Time
tRWD
67

79

94

ns
10
tCPWD
47

54

64

ns
10
CAS Active Delay Time from RAS
Precharge
tRPC
5

5

5

ns
12
RAS to CAS Set-up Time
(CAS before RAS)
tCSR
5

5

5

ns
12
RAS to CAS Hold Time
(CAS before RAS)
tCHR
10

10

10

ns
13
CAS Precharge WE Delay Time
7/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
Notes: 1. A start-up delay of 200µs is required after power-up, followed by a minimum of eight initialization
cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved.
2. The AC characteristics assume tT = 2ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT)
are measured between VIH and VIL.
4. -50 is measured with a load circuit equivalent to 2 TTL load and 50pF, and -60/-70 is measured with a
load circuit equivalent to 2 TTL load and 100pF.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit,
then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit,
then the access time is controlled by tAA.
7. tCEZ (Max.), tREZ (Max.), tWEZ (Max.), and tOEZ (Max.) define the time at which the output achieved the
open circuit condition and are not referenced to output voltage levels.
8. tCEZ, and tREZ must be satisfied for open circuit condition.
9. tRCH or tRRH must be satisfied for a read cycle.
10. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then the cycle is an early write cycle and
the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD ≥ tCWD
(Min.), tRWD ≥ tRWD(Min.), tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify
write cycle and data out will contain data read from the selected cell; if neither of the above sets of
conditions is satisfied, then the condition of the data out (at access time) is indeterminate.
11. These parameters are referenced to the UCAS and LCAS, leading edges in an early write cycle, and to
the WE leading edge in an OE control write cycle, or a read modify write cycle.
12. These parameters are determined by the falling edge of either UCAS or LCAS, whichever is earlier.
13. These parameters are determined by the rising edge of either UCAS or LCAS, whichever is later.
14. tCWL should be satisfied by both UCAS and LCAS.
15. tCP is determined by the time both UCAS and LCAS are high.
8/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
TIMING CHART
Read Cycle
RAS
tRC
tRAS
VIH
tRP
VIL
tCSH
tCRP
CAS
tRCD
VIH
tRAD
VIL
tRAL
tASR
Address
WE
OE
tCRP
tRSH
tCAS
VIH
tRAH
tASC
Row
VIL
tCAH
Column
tRCS
tRRH
VIH
tAA
VIL
tRCH
tROH
VIH
VIL
tCAC
tRAC
DQ
tREZ
tOEA
tCEZ
tOEZ
tCLZ
VOH
Valid Data-out
Open
VOL
“H” or “L”
Write Cycle (Early Write)
RAS
tRC
tRAS
VIH
tRP
VIL
tCSH
tCRP
CAS
VIH
tRAD
VIL
tRAL
tASR
Address
VIH
VIL
tRAH
tASC
Row
OE
tCWL
VIH
tWCH
tWP
VIL
tRWL
VIH
VIL
tDS
DQ
tCAH
Column
tWCS
WE
tCRP
tRSH
tCAS
tRCD
VIH
VIL
tDH
Valid Data-in
Open
“H” or “L”
9/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
Read Modify Write Cycle
tRWC
RAS
tRAS
VIH
tRP
VIL
tCSH
tCRP
CAS
tRAD
VIL
VIH
VIL
tCRP
tRSH
tCAS
VIH
tASR
Address
tRCD
tRAH
Row
tASC
tCWL
tRWL
tCAH
Column
tRCS
tCWD
tRWD
WE
OE
tWP
VIH
VIL
tAWD
tAA
tOEH
tOEA
VIH
tOED
VIL
tDH
tCAC
tRAC
DQ
VI/OH
VI/OL
tOEZ
tCLZ
Valid
Data-out
tDS
Valid
Data-in
“H” or “L”
10/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
Fast Page Mode Read Cycle (part-1)
tRASP
RAS
VIH
VIL
Address
tHPC
tCSH
tCRP
CAS
VIH
VIL
tRAD
tASR
tASC
tRAH
Row
tRHCP
tCP
tCP
tCAS
VIH
VIL
tRP
tRCD
tCAS
tCAH
tASC
Column
tCAS
tASC
tCAH
Column
tCAH
Column
tRCS
WE
OE
tOCH
VIH
tAA
VIL
tCAC
tRAC
tAA
VIH
VIL
tCAC
tOEP
tOEA
tOEA
tOEZ
tOEZ
tDOH
VOH
Valid Data-out
VOL
tCAC
tAA
tCHO
tOEP
tCPA
tOEA
DQ
tRRH
Valid
Data-out
Valid *
Data-out
tREZ
Valid *
Data-out
tCLZ
* : Same Data,
“H” or “L”
Fast Page Mode Read Cycle (part-2)
tRP
tRASP
RAS
VIH
VIL
tCRP
tCSH
Address
VIH
VIL
tCAS
tCAS
tASR
tRAD
tRAH
Row
tASC
tCAH
OE
tCAH
tASC
Column
Column
tRCS
WE
tCP
tCP
VIH
VIL
tCRP
tHPC
tRCD
CAS
tRHCP
tHPC
tCAS
tASC
tCAH
Column
tRCS
VIH
VIL
tAA
tRAC
tRCH
tWPE
tOEA
VIH
tAA
tCPA
tAA
tCAC
tDOH
VIL
tCAC
tCAC
DQ
VOH
VOL
tWEZ
Valid
Data-out
Valid Data-out
tCEZ
Valid
Data-out
tCLZ
“H” or “L”
11/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
Fast Page Mode Write Cycle (Early Write)
tRP
tRASP
RAS
CAS
Address
WE
OE
tCSH
VIH
VIL
tCRP
tHPC
tRCD
tCP
VIH
VIL
tRAD
tASR
tASC
tRAH
Row
tASC
Column
tWCS
VIH
tRSH
tCAS
tCAS
tCAH
tASC
tCAH
Column
tWCS
tWCH
tCAH
Column
tWCS
tWCH
tWCH
VIL
VIH
VIL
tDS
DQ
tCP
tCAS
VIH
VIL
tHPC
VIH
tDH
tDS
Valid
Data-in
VIL
tDH
tDS
tDH
Valid
Data-in
Valid
Data-in
“H” or “L”
Fast Page Mode Read Modify Write Cycle
tRASP
RAS
CAS
VIH
VIL
tRWD
tCRP
tRCD
tCP
VIH
VIL
VIH
VIL
tASC
tASC
tRAD
tHPRWC
tRAH
Row
Column
VIH
VIL
Column
VIH
tAWD
tAWD
tAA
tDS
tAA
tOED
VI/OH
tCLZ
tDS
tWP
tOEA
VIL
VI/OL
tWP
tOEA
tCAC
DQ
tCWD
tRCS
tRAC
OE
tCAH
tCPA
tCWL
tCAH
tRCS
WE
tRWL
tCWD
tASR
Address
tCPWD
tOED
tOEH
tOEZ
tDH
Valid
Data-out
Valid
Data-in
tCAC
tOEH
tOEZ
Valid
Data-out
tDH
Valid
Data-in
tCLZ
“H” or “L”
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FEDD5118165F-01
1Semiconductor
MSM5118165F
RAS-only
Refresh Cycle
RAS
tRC
RAS
CAS
Address
tRAS
VIH
VIL
tRP
tRPC
tCRP
VIH
VIL
tASR
VIH
tRAH
Row
VIL
tCEZ
DQ
VOH
Open
VOL
Note: WE, OE = “H” or “L”
“H” or “L”
CAS before RAS Refresh Cycle
tRP
RAS
CAS
tRC
tRAS
VIH
VIL
tRPC
tCP
tRP
tCSR
tRPC
tCHR
VIH
VIL
tCEZ
DQ
VOH
VOL
Open
13/15
FEDD5118165F-01
1Semiconductor
MSM5118165F
Hidden Refresh Read Cycle
tRC
RAS
CAS
VIH
VIL
tCRP
tRAS
tRCD
tRSH
VIH
tRP
tRAD
VIL
tRAH
VIH
tASC
Row
VIL
tCAH
Column
tRCS
WE
tRP
tCHR
tASR
Address
tRC
tRAS
tCAC
VIH
VIL
tRRH
tRAL
tREZ
tAA
tROH
OE
DQ
tCEZ
tOEA
VIH
VIL
tRAC
tOEZ
tCLZ
VOH
Open
VOL
Valid Data-out
“H” or “L”
Hidden Refresh Write Cycle
tRC
RAS
CAS
VIH
VIL
tCRP
WE
tRCD
DQ
tRSH
VIH
VIH
VIL
tRP
tRP
tRAD
VIL
tRAH
tASC
Row
tCAH
Column
tRAL
tRWL
tWP
VIH
VIL
tWCS
OE
tRAS
tCHR
tASR
Address
tRC
tRAS
tWCH
VIH
VIL
VIH
tDS
tDH
Valid Data-in
VIL
“H” or “L”
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FEDD5118165F-01
1Semiconductor
MSM5118165F
NOTICE
1. The information contained herein can change without notice owing to product and/or technical improvements.
Before using the product, please make sure that the information being referred to is up-to-date.
2. The outline of action and examples for application circuits described herein have been chosen as an explanation
for the standard action and performance of the product. When planning to use the product, please ensure that
the external conditions are reflected in the actual circuit, assembly, and program designs.
3. When designing your product, please use our product below the specified maximum ratings and within the
specified operating ranges including, but not limited to, operating voltage, power dissipation, and operating
temperature.
4. Oki assumes no responsibility or liability whatsoever for any failure or unusual or
unexpected operation resulting from misuse, neglect, improper installation, repair, alteration
or accident, improper handling, or unusual physical or electrical stress including, but not
limited to, exposure to parameters beyond the specified maximum ratings or operation
outside the specified operating range.
5. Neither indemnity against nor license of a third party’s industrial and intellectual property right, etc. is granted
by us in connection with the use of the product and/or the information and drawings contained herein. No
responsibility is assumed by us for any infringement of a third party’s right which may result from the use
thereof.
6. The products listed in this document are intended for use in general electronics equipment for commercial
applications (e.g., office automation, communication equipment, measurement equipment, consumer
electronics, etc.). These products are not authorized for use in any system or application that requires special or
enhanced quality and reliability characteristics nor in any system or application where the failure of such
system or application may result in the loss or damage of property, or death or injury to humans.
Such applications include, but are not limited to, traffic and automotive equipment, safety devices, aerospace
equipment, nuclear power control, medical equipment, and life-support systems.
7. Certain products in this document may need government approval before they can be exported to particular
countries. The purchaser assumes the responsibility of determining the legality of export of these products and
will take appropriate and necessary steps at their own expense for these.
8. No part of the contents contained herein may be reprinted or reproduced without our prior permission.
Copyright 2000 Oki Electric Industry Co., Ltd.
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