Product Bulletin OP993 June 1996 PIN Silicon Photodiode Type OP993 Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Wide receiving angle • Linear response vs. irradiance • Fast switching time • TO-18 equivalent package style Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Description Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890nm and Ee(APT) of 1.7 mW/cm2 average within a .250" dia. aperture. (4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in the area of the leads. The OP993 photodiode consists of a PIN silicon photodiode mounted in a dark blue plastic injection molded shell package. The wide receiving angle provides excellent on-axis coupling. The sensors are 100% production tested for close correlation with Optek emitters. Typical Performance Curves Optek’s packaging process provides excellent optical and mechanical axis alignment. The shell also provides excellent optical lens surface, control of chip placement, and consistency of external package dimensions. Relative Response vs. Wavelength Coupling Characteristics OP993 and OP293 VR = 5 V IF = 20 mA λ- Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 3-64 Distance Between Lens tips - inches (972) 323-2200 Fax (972) 323-2396 Type OP993 Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL PARAMETER IL Reverse Light Current ID Reverse Dark Current V(BR) Reverse Breakdown Voltage MIN TYP MAX UNITS 12.5 1 TEST CONDITIONS 28.5 µA VR = 5 V, Ee = 1.7 mW/cm2(3) 60 nA VR = 30 V, Ee = 0 V IR = 100 µA 60 VF Forward Voltage V IF = 1 mA CT Total Capacitance 4 1.2 pF VR = 20 V, Ee = 0, f = 1.0 MHz tr, tf Rise Time, Fall Time 5 ns VR = 20 V, λ = 850 nm, RL = 50 Ω Typical Performance Curves Normalized Light Current vs Reverse Voltage Total Capacitance vs Reverse Voltage TA = 25o C Ee = 0 mW/cm2 f = 1 MHz Normalized Light and Dark Current vs Ambient Temperature VR = 5 V λ = 890 nm Normalized to TA = 25o C Light Current TA = 25o C λ = 935 nm Normalized to VR = 5 V Dark Current VR - Reverse Voltage - V VR - Reverse Voltage - V Light Current vs. Irradiance Switching Time Test Circuit TA - Ambient Temperature - oC Light Current vs. Angular Displacement VR = 5 V TA = 25o C λ = 890 nm Test Conditions: λ = 935 nm VR = 5 V Distance Lens to Lens = 1.5 inches Ee - Irradiance - mW/cm2 θ - Angular Displacement - Deg. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-65